APTGT50DA170TG Boost chopper Trench + Field Stop IGBT® Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction NT C2 CR1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring OUT Q2 G2 E2 NT C1 G2 E2 VBUS VBUS SENSE 0/VBUS Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant OUT OUT E2 NTC2 G2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1700 75 50 100 ±20 312 Tj = 125°C 100A @ 1600V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2006 0/VBU S V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT50DA170TG – Rev 1 VBUS VB US SENS E VCES = 1700V IC = 50A @ Tc = 80°C APTGT50DA170TG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Tf Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 50A R G = 10Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 50A R G = 10Ω VGE = 15V Tj = 125°C VBus = 900V IC = 50A Tj = 125°C R G = 10Ω Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF Test Conditions Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ 4400 180 150 370 40 Unit 250 2.4 µA 6.5 400 V nA Max Unit VR=1700V ns 180 400 50 ns 800 300 16 mJ 15 Typ Max IF = 50A IF = 50A VR = 900V di/dt =800A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C V pF 1700 DC Forward Current VF 2.0 2.4 5.8 Max 650 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Typ 250 500 50 1.8 1.9 385 490 14 23 6 12 µA A 2.2 V ns July, 2006 Symbol Characteristic µC mJ 2-5 APTGT50DA170TG – Rev 1 Electrical Characteristics APTGT50DA170TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.4 0.7 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 3500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 160 °C N.m g July, 2006 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50DA170TG – Rev 1 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : APTGT50DA170TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 60 TJ=125°C 60 40 40 20 20 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 VGE=9V 0 1 3 VCE (V) 4 5 50 V CE = 900V V GE = 15V RG = 10Ω T J = 125°C TJ =25°C 80 60 E (mJ) 40 T J=125°C 40 TJ=125°C 20 30 Eon Eoff 20 Er 10 0 0 5 6 7 8 9 10 11 12 0 13 20 Switching Energy Losses vs Gate Resistance 80 100 125 VCE = 900V VGE =15V IC = 50A TJ = 125°C 100 Eon IC (A) 30 60 Reverse Bias Safe Operating Area 50 40 40 IC (A) V GE (V) 20 Eoff 75 50 V GE=15V T J=125°C RG=10Ω 25 10 Er 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 0.35 0.3 0.25 0.2 0.15 0 80 400 800 1200 1600 2000 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 70 IGBT 0.9 0.7 July, 2006 0 0.5 0.3 0.1 0.05 0 0.00001 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT50DA170TG – Rev 1 E (mJ) 2 Energy losses vs Collector Current Transfert Characteristics 100 IC (A) VGE =13V V GE=15V 0 0 Thermal Impedance (°C/W) VGE=20V 80 IC (A) 80 IC (A) TJ = 125°C T J=25°C APTGT50DA170TG Forward Characteristic of diode VCE =900V D=50% RG=10 Ω T J=125°C T C=75°C 25 20 ZVS 15 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 30 ZCS 10 hard switching 5 0 0 10 20 30 40 IC (A) 50 60 70 100 90 80 70 60 50 40 30 20 10 0 TJ =25°C T J=125°C TJ=125°C 0 80 0.5 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.8 0.7 Diode 0.9 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50DA170TG – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)