HSDL-4271 High-Performance T-1¾ (5mm) AlGaAs Infrared (940nm) Lamp Datasheet Description Features The HSDL-4271 Infrared emitter was designed for applications that require high power and low forward voltage. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for efficiency at emission wavelengths of 940 nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package. • High Power AlGaAs LED Technology 5.0 ± 0.2 • 940 nm Wavelength • T-1¾ Package • Low Cost • Low Forward Voltage: 1.2V at 20mA Applications • Industrial Infrared Equipments and Applications (Smoke Detectors etc) • Consumer Electronics (Infrared Remote Controller etc) 8.7 ± 0.2 1.14 ± 0.2 • Infrared spotlight for cameras • Discrete Interrupters • Infrared source for optical counters and card readers 31.6 min. 5.8 ± 0.2 0.7 max. 2.54 1.0 min. CATHODE FLAT 0.50 ± 0.1 Part Number Lead Form Shipping Option HSDL-4271 Straight Bulk Absolute Maximum Ratings at 25°°C Parameter Symbol Minimum Maximum Unit Reference Peak Forward Current IFPK - 350 mA Duty cycle = 20% period = 200us Forward Current IFDC - 100 mA Power Dissipation PDISS - 200 mW Reverse Voltage VR 5 - V Storage Temperature TS -40 100 °C LED Junction Temperature TJ 110 °C 260 for 5 sec °C Lead Soldering Temperature IR=100uA Notes: 1. Derate as shown in Figure 6. Recommended Operating Conditions Parameter Symbol Min Max Unit Operating Temperature TO -40 85 °C Reference Electrical Characteristics at 25°° C Parameter Symbol Min. Typ. Max. Unit Condition Reference Forward Voltage VF - 1.2 1.4 1.5 1.7 V IFDC=20mA IFDC=100mA Figure 2 Figure 3 Forward Voltage Temperature Coefficient ∆V/∆T - -1.0 - mV/°C IFDC=100mA Figure 4 Series Resistance RS - 2 - Ohms IFDC=100mA Diode Capacitance CO - 25 - pF VR=0V, f=1MHz Thermal Resistance, Junction to Ambient Rθja - 310 - °C/W Optical Characteristics at 25°°C Parameter Symbol Min. Typ. Max. Unit Condition Reference Radiant On-Axis Intensity IE 25 50 - mW/Sr ILED=100mA Figure 4 Radiant On-Axis Intensity Temperature Coefficient ∆IE/∆T - -0.3 -0.5 - %/°C ILED=100mA Viewing Angle 2θ1/2 - 30 - ° Figure 7 λpk - 940 - nm Figure 1 Spectral Width ∆λ - 50 - nm ILED=20mA Optical Rise and Fall Time tr/tf - 1.3 - us ILED=100mA Peak Wavelength 2 Figure 1 DC Forward Current vs. Forward Voltage at Temp=25˚C 100 IFDC - DC Forward Current,, - (mA) Relative Radiant Intensity 1.0 0.8 0.6 0.4 0.2 0 800 900 10 1 1000 0 0.5 1 VF - Forward Voltage - (V) Wavelength (nm) IFPK - Peak Forward Current - (mA) Figure 1. Relative Radiant Intensity vs. Wavelength Figure 2. DC Forward Current vs. Forward Voltage Peak Forward Current vs. Forward Voltage at Ta=25˚C Radiant Intensity, IE vs. Forward Current, IF at Ta=25 ˚C IE - Radiant Intensity - (mW/Sr) 1000 100 10 1 0.0 0.5 1.0 1.5 VF - Forward Voltage - (V) IDC MAX - Maximum DC Current - (mA) VF - Average - (Volts) 1.4 1.3 If=20mA 1.2 1.1 1.0 Figure 5. Forward Voltage vs. Ambient Temperature 3 50 IF - Forward Current - (mA) 100 Maximum allowable DC current vs. ambient temperature 1.5 If=100mA 25 50 70 Temperature - (˚C) 20 Figure 4. Radiant Intensity vs. DC Forward Current Average VF versus Temperature 0 40 20 1.6 -25 60 0 2.0 Figure 3. Peak Forward Current vs. Forward Voltage -40 1.5 85 100 110 100 90 80 70 60 50 40 30 20 10 0 RJA=300˚C/ 0 20 40 60 80 TA - Ambient Temperature - (˚C) Figure 6: DC Forward Current vs. Ambient Temperature Derated Based on TJMAX =110°° C 100 Radiation Profile Relative Rad Power 1.2 1.0 0.8 0.6 0.4 0.2 0 -100 -50 0 Angle (˚) 50 100 Figure 7. Radiant Intensity vs. Angular Displacement For company and product information, please go to our web site: WWW.liteon.com or http://optodatabook.liteon.com/databook/databook.aspx Data subject to change. Copyright © 2007 Lite-On Technology Corporation. All rights reserved.