MICROSEMI APTGF300DU120G

APTGF300DU120G
Dual Common Source
NPT IGBT Power Module
C1
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
C2
Q1
Q2
G1
G2
E1
E2
E
G1
VBUS
0/VBUS
VCES = 1200V
IC = 300A @ Tc = 80°C
OUT
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
E1
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
G2
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
Tc = 25°C
Max ratings
1200
400
300
600
±20
1780
Tj = 150°C
600A @ 1200V
Tc = 25°C
Tc = 80°C
Tc = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGF300DU120G – Rev 2 June, 2006
E2
APTGF300DU120G
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
Test Conditions
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 300A
Tj = 125°C
VGE = VCE, IC = 12mA
VGE = ±20V, VCE = 0V
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
4.5
Typ
21
2.9
1.52
120
50
310
Max
500
750
3.9
Unit
6.5
±1
V
µA
Max
Unit
IF = 300A
IF = 300A
VR = 600V
di/dt =4500A/µs
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V
nF
ns
130
60
360
40
ns
25
mJ
15
Typ
Max
1200
VR=1200V
µA
30
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
3.3
4
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 300A
R G = 3Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 300A
R G = 3Ω
VGE = 15V
Tj = 125°C
VBus = 600V
IC = 300A
Tj = 125°C
R G = 3Ω
Test Conditions
Typ
Unit
V
Tj = 25°C
250
Tj = 125°C
500
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
2.1
1.9
120
210
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
22
43
7
15
µA
A
V
ns
µC
mJ
2-5
APTGF300DU120G – Rev 2 June, 2006
Electrical Characteristics
APTGF300DU120G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.07
0.12
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGF300DU120G – Rev 2 June, 2006
SP6 Package outline (dimensions in mm)
APTGF300DU120G
Typical Performance Curve
Output Characteristics
600
500
500
TJ=25°C
400
300
200
VGE =20V
VGE =12V
300
T J=125°C
VGE=9V
100
0
0
0
1
2
3
V CE (V)
4
5
6
0
600
70
500
60
2
3
4
V CE (V)
5
VCE = 600V
VGE = 15V
RG = 3 Ω
T J = 125°C
50
E (mJ)
400
TJ=125°C
300
1
6
Energy losses vs Collector Current
Transfert Characteristics
200
Eon
Eoff
40
30
20
TJ=25°C
100
10
Er
Eoff
0
0
5
6
7
8
9
10
11
0
12
100
200
300
400
500
600
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
100
700
VCE = 600V
VGE =15V
IC = 300A
T J = 125°C
60
600
Eon
500
IC (A)
80
E (mJ)
VGE =15V
200
100
IC (A)
TJ = 125°C
400
IC (A)
IC (A)
Output Characteristics (V GE=15V)
600
Eoff
40
400
300
VGE =15V
TJ =125°C
RG=3 Ω
200
20
100
Er
0
0
0
2
0
4 6 8 10 12 14 16 18 20
Gate Resistance (ohms)
300
600
900
1200
1500
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.9
IGBT
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGF300DU120G – Rev 2 June, 2006
Thermal Impedance (°C/W)
0.08
APTGF300DU120G
Forward Characteristic of diode
600
VCE=600V
D=50%
RG=3 Ω
TJ =125°C
TC=75°C
80
ZVS
60
500
40
hard
switching
20
T J=125°C
400
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
100
300
TJ=25°C
200
ZCS
100
0
0
0
50
100 150 200
IC (A)
0
250 300 350
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.14
0.12
0.1
0.9
Diode
0.7
0.08
0.06
0.04
0.02
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGF300DU120G – Rev 2 June, 2006
rectangular Pulse Duration (Seconds)