APTGT75X60T3G 3 Phase bridge Trench + Field Stop IGBT® Power Module 15 VCES = 600V IC = 75A* @ Tc = 80°C Application • Motor control 31 16 19 20 23 29 25 30 18 11 10 14 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant Absolute maximum ratings ICM VGE PD RBSOA TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 100* 75* 150 ±20 250 150A @ 550V Unit V A V W July, 2007 IC Parameter Collector - Emitter Breakdown Voltage * Specification of IGBT device but output current must be limited to 40A at Tc=80°C and 65A at Tc=25°C not to exceed a connectors temperature greater than 120°C. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT75X60T3G – Rev 0 Symbol VCES APTGT75X60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 75A Tj = 150°C VGE = VCE, IC = 600µA VGE = 20V, VCE = 0V Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Test Conditions Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 4620 300 140 Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 75A Tj = 25°C RG = 4.7Ω Tj = 150°C 110 45 200 Tf Fall Time Td(on) Turn-on Delay Time Tr Rise Time Turn-off Delay Time Fall Time Td(off) Tf Eon Turn-on Switching Energy Eoff Turn-off Switching Energy pF ns 40 120 50 250 60 0.35 0.6 2.2 2.6 ns mJ mJ Reverse diode ratings and characteristics IRM Test Conditions Min Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ Max 600 Maximum Peak Repetitive Reverse Voltage V VR=600V Tj = 25°C Tj = 150°C IF = 50A VGE = 0V Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 2.6 Tj = 150°C Tj = 25°C Tj = 150°C 5.4 0.6 1.2 IF = 50A VR = 300V di/dt =1800A/µs www.microsemi.com Unit 250 500 µA A 2 V ns µC July, 2007 VRRM mJ 2-5 APTGT75X60T3G – Rev 0 Symbol Characteristic APTGT75X60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K Min Typ Max 0.6 1.42 Unit R25 T: Thermistor temperature 1 1 RT: Thermistor value at T − exp B25 / 85 T25 T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 175 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT75X60T3G – Rev 0 28 17 1 July, 2007 SP3 Package outline (dimensions in mm) APTGT75X60T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 150 150 TJ=25°C TJ = 150°C VGE=19V 125 125 75 VGE=15V 75 50 50 25 25 VGE=9V TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 5 TJ=25°C 125 E (mJ) 75 TJ=150°C TJ=25°C 3 Er 2 8 9 10 11 0 12 25 50 125 150 Reverse Bias Safe Operating Area Eoff 150 125 Eon 3 IC (A) E (mJ) 100 175 VCE = 300V VGE =15V IC = 75A TJ = 150°C 2 100 75 50 Er 1 75 IC (A) Switching Energy Losses vs Gate Resistance 4 3.5 Eoff VGE (V) 5 3 0 0 7 2.5 1 25 6 1.5 2 VCE (V) Eon TJ=125°C 5 1 VCE = 300V VGE = 15V RG = 4.7Ω TJ = 150°C 4 100 50 0.5 Energy losses vs Collector Current Transfert Characteristics 150 IC (A) VGE=13V 100 TJ=150°C IC (A) IC (A) TJ=125°C 100 VGE=15V TJ=150°C RG=4.7Ω 25 Eon 0 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35 40 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.4 0.3 0.2 0.1 IGBT 0.9 0.7 0.5 July, 2007 0.6 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT75X60T3G – Rev 0 Thermal Impedance (°C/W) 0.7 APTGT75X60T3G Forward Characteristic of diode 100 VCE=300V D=50% RG=4.7Ω TJ=150°C 60 50 40 75 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 Tc=85°C 30 Hard switching 20 50 TJ=125°C TJ=150°C 25 10 TJ=25°C 0 0 0 20 40 60 80 0 100 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 1.4 1.2 1 0.7 0.8 0.5 0.6 0.3 0.4 0.2 Diode 0.9 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT75X60T3G – Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein July, 2007 Rectangular Pulse Duration in Seconds