LITEON LTV-851

LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
* Current transfer ratio
( CTR : MIN. 40% at IF = 5mA, VCE = 5V )
* High isolation voltage between input and output
( Viso = 5,000Vrms )
* High collector-emitter voltage
(VCEO : 300V)
* Dual-in-line package :
LTV-851 : 1-channel type
* Wide lead spacing package :
LTV-851M : 1-channel type
* Surface mounting package :
LTV-851S : 1-channel type
* Tape and reel packaging :
LTV-851S-TA1
* UL approved ( No. E113898 )
* TUV approved ( No. R9653630 )
* FIMKO approved ( No. 202949 )
* NEMKO approved ( No. P99102464 )
* DEMKO approved ( No. 99-04182 )
* SEMKO approved ( No. 9943380/01-20 )
* VDE approved ( No. 094722 )
* CSA approve in progress
Part No. : LTV-851 ( M, S, S-TA1 )
BNS-OD-C131/A4
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-851 :
LTV-851M :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-851 ( M, S, S-TA1 )
BNS-OD-C131/A4
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-851S :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-851 ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
3 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
LTV-851S-TA1 :
Description
Tape wide
Pitch of sprocket holes
Distance of compartment
Distance of compartment to compartment
Part No. : LTV-851 ( M, S, S-TA1 )
BNS-OD-C131/A4
Symbol
W
P0
F
P2
P1
Dimensions in mm ( inches )
16 ± 0.3 ( .63 )
4 ± 0.1 ( .15 )
7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
12 ± 0.1 ( .472 )
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER
SYMBOL
RATING
UNIT
Forward Current
IF
50
mA
Reverse Voltage
VR
6
V
Power Dissipation
P
70
mW
Collector - Emitter Voltage
VCEO
300
V
Emitter - Collector Voltage
VECO
6
V
Collector Current
IC
50
mA
Collector Power Dissipation
PC
150
mW
Ptot
200
mW
Viso
5,000
Vrms
Operating Temperature
Topr
-25 ~ +100
°C
Storage Temperature
Tstg
-55 ~ +125
°C
Tsol
260
°C
INPUT
OUTPUT
Total Power Dissipation
*1 Isolation Voltage
*2 Soldering Temperature
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : LTV-851 ( M, S, S-TA1 )
BNS-OD-C131/A4
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER
INPUT
OUTPUT
*1 CTR =
CONDITIONS
Forward Voltage
VF
—
1.2
1.4
V
IF=20mA
Reverse Current
IR
—
—
10
µA
VR=4V
Terminal Capacitance
Ct
—
30
250
pF
V=0, f=1KHz
Collector Dark Current
ICEO
—
—
1
µA
VCE=200V, IF=0
Collector-Emitter
Breakdown Voltage
BVCEO
300
—
—
V
IC=0.1mA
IF=0
Emitter-Collector
Breakdown Voltage
BVECO
6
—
—
V
IE=10µA
IF=0
IC
2
—
—
mA
*1 Current Transfer Ratio
CTR
40
—
—
%
Collector-Emitter
Saturation Voltage
VCE(sat)
—
0.1
0.3
V
IF=20mA
IC=1mA
Isolation Resistance
Riso
—
Ω
DC500V
40 ~ 60% R.H.
Floating Capacitance
Cf
—
0.6
1
pF
V=0, f=1MHz
Cut-Off Frequency
fc
—
50
—
kHz
VCE=5V, IC=2mA
RL=100Ω, -3dB
Response Time (Rise)
tr
—
4
10
µs
Response Time (Fall)
tf
—
5
12
µs
Collector Current
TRANSFER
CHARACTERISTICS
SYMBOL MIN. TYP. MAX. UNIT
5×1010 1×1011
IF=5mA
VCE=5V
VCE=2V, IC=2mA
RL=100Ω
IC
× 100%
IF
Part No. : LTV-851 ( M, S, S-TA1 )
BNS-OD-C131/A4
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6 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forward Current vs.
Ambient Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Collector power dissipation Pc (mW)
Forward current IF (mA)
60
50
40
30
20
10
0
-25
0
25
50
75
100
125
200
150
100
50
0
-25
o
Ambient temperature Ta ( C)
7mA
3
2
125
100 C
o
o
80 C
40 C
o
20 C
o
60 C
10
1
0
4
2
8 10 12 14 16 18 20
6
0.5 0.7 0.9 1.1
Fig.5 Current Transfer Ratio vs. Forward
Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
30
180
PC (MAX.)
VCE= 5V
Collector current Ic (mA)
160
1.3 1.5 1.7 1.9
Forward voltage (V)
Forward current IF (mA)
Current transfer ratio CTR (%)
100
1
0
140
120
100
80
60
40
25
25mA
20mA
I F= 30mA
20
15mA
10mA
15
10
5mA
5
20
0
1
0
2
5
10
20
Forward current (mA)
Part No. : LTV-851 ( M, S, S-TA1 )
BNS-OD-C131/A4
75
o
Forward current (mA)
Collector-emitter saturation voltage
V (sat) (V)
4
50
100
Ic= 0.5mA
1mA
3mA
5mA
5
25
Fig.4 Forward Current vs. Forward
Voltage
Fig.3 Collector-emitter saturation
Voltage vs. Forward current
6
0
Ambient temperature Ta ( C)
50 100
0
2
4
6
8
10
Collector-emitter voltage VCE(V)
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
1.0
Relative current transfer ratio (%)
I F= 1mA
VCE= 2V
0.8
0.6
0.4
0.2
Collector-emitter saturation voltage
VCE (sat) (V)
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
1.20
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0
20
40
60
80
100
20
O
60
100
Fig.10 Response Time vs. Load
Resistance
1000
VCE= 200V
Response time ( s)
500
100
VCE= 2V
I C= 20mA
tr
200
100
tf
50
td
ts
20
10
5
2
10
20
40
60
80
1
100
O
0.1
Fig.11 Frequency Response
Test Circuit for Response Time
Vcc
0
10
1
Load resistance RL (k )
Ambient temperature Ta ( C)
Voltage gain Av (dB)
80
Ambient temperature Ta ( C)
Fig.9 Collector Dark Current vs.
Temperature
1000
40
O
Ambient temperature Ta ( C)
Collector dark current ICEO (nA)
I F= 20mA
Ic= 100mA
1.10
VCE= 2V
I C= 20mA
Input
RD
RL
Input
Output
Output
10%
-5
90%
td
-10
ts
tr
-15
RL= 1k
100
tf
Test Circuit for Frequency Response
10
Vcc
-20
RD
-25
0.1
1
10
100
RL
Output
500
Frequency f (kHz)
Part No. : LTV-851 ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
8 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
4 PIN
Part No. : LTV-851 ( M, S, S-TA1 )
BNS-OD-C131/A4
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9 of 9