LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon LMBT918LT1G z We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking Shipping LMBT918LT1G M3B 3000/Tape&Reel LMBT918LT3G M3B 10000/Tape&Reel 3 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS Rating SOT–23 (TO–236AB) Symbol Value Unit Collector–Emitter Voltage V CEO 15 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc 50 mAdc Collector Current — Continuous IC 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA 556 °C/W PD 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C RθJA TJ , Tstg DEVICE MARKING LMBT9181LT1G = M3B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 15 — Vdc V (BR)CBO 30 — Vdc V 3.0 — Vdc — 50 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 3.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 1.0 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 15 Vdc, I E = 0) (BR)EBO I CBO 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1/3 LESHAN RADIO COMPANY, LTD. LMBT918LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 20 –– –– VCE(sat) –– 0.4 Vdc V — 1.0 Vdc 600 — MHz — — 3.0 1.7 C ibo — 2.0 pF NF — 6.0 dB P out 30 — mW G pe 11 — dB ON CHARACTERISTICS DC Current Gain (I C = 3.0 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) Base–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) BE(sat) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT (I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz) Output Capacitance (V CB = 0 Vdc, I E = 0, f = 1.0 MHz) (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure (I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 Ω, f = 60 MHz) (Figure 1) Power Output (I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz) Common–Emitter Amplifier Power Gain (I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz) C obo pF V CC V BB EXTERNAL 100 k 1000 pF BYPASS 0.018 µF C 0.018 µF 3 50 Ω RF VM G 0.018 µF 0.018 µF NF TEST CONDITIONS I C = 1.0 mA V CE = 6.0 VOLTS R S = 50 Ω f = 60 MHz G pe TEST CONDITIONS I C = 6.0 mA V CE = 12 VOLTS f = 200 MHz Figure 1. NF, G pe Measurement Circuit 20–200 2/3 LESHAN RADIO COMPANY, LTD. LMBT918LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3