LESHAN RADIO COMPANY, LTD. LMBTA94LT1G LMBTA94LT1G PNP EPITAXIAL PLANAR TRANSISTOR 3 We declare that the material of product compliance with RoHS requirements. 1 2 Description SOT– 23 The LMBTA94LT1G is designed for application that requires high voltage. COLLECTOR 3 Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to LMBTA94LT1G DEVICE MARKING 1 BASE 2 EMITTER LMBTA94LT1G = 4Z Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 350 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... -400 V VCEO Collector to Emitter Voltage ................................................................................... -400 V VEBO Emitter to Base Voltage ............................................................................................. -6 V IC Collector Current ...................................................................................................... -150 mA Characteristics (Ta=25 ° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) *hFE1 *hFE2 *hFE3 *hFE4 Cob Min. -400 -400 -6 50 75 60 20 - Typ. 4 Max. -100 -100 -500 -200 -300 -600 -900 200 6 Unit V V V nA nA nA mV mV mV mV pF Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-400V, IE=0 VEB=-6V, IC=0 VCE=-400V, VBE=0 IC=-1mA, IB=-0.1mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA VCE=-10V, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% 1/3 LESHAN RADIO COMPANY, LTD. LMBTA94LT1G Characteristics Curve Current Gain & Collector Current Current Gain & Collector Current 1000 1000 hFE @ VCE=10V o 75 C o 125 C o 75 C 100 o o hFE 125 C hFE 25 C 10 100 o 25 C hFE @ VCE=3V 1 10 1 10 100 1 1000 Collector Current-IC (mA) 10 100 1000 Collector Current-IC (mA) Saturation Voltage & Collector Current Saturation Voltage & Collector Current 1000 1000 VCE(sat) @ IC=10IB o 25 C 75 C Saturation Voltage (mV) Saturation Voltage (mV) o o 125 C 100 o 25 C 10 o 125 C o 75 C VBE(s at) @ IC=10IB 100 1 10 100 Collector Current-IC (mA) 1000 1 10 100 1000 Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage Capacitance (pF) 100 10 Cob 1 0.1 1 10 100 Reverse-Biased Voltage (V) 2/3 LESHAN RADIO COMPANY, LTD. LMBTA94LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 A L 2. CONTROLLING DIMENSION: INCH. 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3