® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Revised Test Condition of ICC Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 Issue Date Aug.29.2007 Aug.28.2009 ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 FEATURES GENERAL DESCRIPTION Fast access time : 15/20ns Low power consumption: Operating current : 140/110mA(MAX.) Standby current : 3mA(MAX. for 15/20ns) 100µA( (MAX. for 15/20ns LL version) Single 5V power supply All outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II The LY616416 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY616416 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY616416 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family LY616416 LY616416(E) LY616416(I) LY616416(LL) LY616416(LLE) LY616416(LLI) Operating Temperature 0 ~ 70℃ -20 ~ 80℃ -40 ~ 85℃ 0 ~ 70℃ -20 ~ 80℃ -40 ~ 85℃ Vcc Range 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V Speed 15/20ns 15/20ns 15/20ns 15/20ns 15/20ns 15/20ns Power Dissipation Standby(ISB1) Operating(Icc) 3mA(MAX.) 140/110mA(MAX.) 3mA(MAX.) 140/110mA(MAX.) 3mA(MAX.) 140/110mA(MAX.) 100µA(MAX.) 140/110mA(MAX.) 100µA(MAX.) 140/110mA(MAX.) 100µA(MAX.) 140/110mA(MAX.) Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A15 DQ0-DQ7 Lower Byte DQ8-DQ15 Upper Byte CE# WE# OE# LB# UB# SYMBOL DESCRIPTION A0 - A15 Address Inputs DQ0 – DQ15 Data Inputs/Outputs DECODER I/O DATA CIRCUIT 64Kx16 MEMORY ARRAY CE# Chip Enable Input WE# Write Enable Input OE# Output Enable Input LB# Lower Byte Control UB# Upper Byte Control VCC Power Supply VSS Ground COLUMN I/O CONTROL CIRCUIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 PIN CONFIGURATION A4 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE# A0 5 40 UB# 6 39 LB# 7 38 DQ15 DQ1 8 37 DQ14 DQ2 9 36 DQ13 DQ3 10 35 DQ12 Vcc 11 34 Vss Vss 12 33 Vcc DQ4 13 32 DQ11 DQ5 14 31 DQ10 DQ6 15 30 DQ9 DQ7 16 29 DQ8 WE# 17 28 NC A15 18 27 A8 A14 19 26 A9 A13 20 25 A10 A12 21 24 A11 NC 22 23 NC LY616416 CE# DQ0 TSOP II ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS Operating Temperature Storage Temperature Power Dissipation DC Output Current SYMBOL VT1 VT2 TA TSTG PD IOUT RATING -0.5 to 6.5 -0.5 to VCC+0.5 0 to 70(C grade) -20 to 80(E grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# OE# H L L L L L L L L X H X L L L X X X WE# LB# X H X H H H L L L UB# X X H L H L L H L X X H H L L H L L I/O OPERATION DQ0-DQ7 DQ8-DQ15 High – Z High – Z High – Z High – Z High – Z High – Z DOUT High – Z High – Z DOUT DOUT DOUT DIN High – Z High – Z DIN DIN DIN SUPPLY CURRENT ISB1 ICC ICC ICC H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage VCC ≧ VOUT ≧ VSS, ILO Current Output Disabled Output High Voltage VOH IOH = -4mA Output Low Voltage VOL IOL = 8mA Cycle time = Min. 15 Average Operating ICC CE# = VIL, II/O = 0mA Power supply Current 20 Others at VIL or VIH Standby Power Supply Current ISB1 MIN. TYP. 4.5 5.0 0.6*Vcc - 0.3 -1 - *4 MAX. 5.5 VCC+0.3 0.8 1 UNIT V V V µA -1 - 1 µA 2.4 - - 0.4 V V - 100 140 mA - 80 110 mA - 0.1 20 3* 6 100* 5 mA µA 15/20 CE# ≧VCC - 0.2V Others at 0.2V or VCC-0.2V 15/20LL Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ 5. 1mA for special request 6. 50µA for special request CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - Note : These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 MAX 8 10 UNIT pF pF ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -8mA/16mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER SYM. Read Cycle Time tRC Address Access Time tAA Chip Enable Access Time tACE Output Enable Access Time tOE Chip Enable to Output in Low-Z tCLZ* Output Enable to Output in Low-Z tOLZ* Chip Disable to Output in High-Z tCHZ* Output Disable to Output in High-Z tOHZ* Output Hold from Address Change tOH LB#, UB# Access Time tBA LB#, UB# to High-Z Output tBHZ* LB#, UB# to Low-Z Output tBLZ* (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z LB#, UB# Valid to End of Write SYM. tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* tBW LY616416-15 MIN. MAX. 15 15 15 7 4 0 7 7 3 7 7 4 - LY616416-20 MIN. MAX. 20 20 20 8 4 0 8 8 3 8 8 4 UNIT LY616416-15 MIN. MAX. 15 12 12 0 10 0 8 0 4 8 12 - LY616416-20 MIN. MAX. 20 16 16 0 11 0 9 0 5 9 16 - UNIT *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE LB#,UB# tBA OE# tOE tOH tOHZ tBHZ tCHZ tOLZ tBLZ tCLZ Dout High-Z Data Valid High-Z Notes : 1.WE#is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low, LB# or UB# = low. 3.Address must be valid prior to or coincident with CE# = low, LB# or UB# = low transition; otherwise tAA is the limiting parameter. 4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW tBW LB#,UB# tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW Din (4) tDH Data Valid WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW tBW LB#,UB# tWP WE# tWHZ Dout High-Z (4) tDW tDH Data Valid Din Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6) tWC Address tAW tWR CE# tAS tCW tBW LB#,UB# tWP WE# tWHZ Dout High-Z (4) tDW tDH Data Valid Din Notes : 1.WE#,CE#, LB#, UB# must be high during all address transitions. 2.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low. 3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION VCC for Data Retention VDR CE# ≧ VCC - 0.2V VCC = 2.0V, CE# ≧ VCC - 0.2V 15/20 Data Retention Current IDR other pins at 0.2V or VCC-0.2V 15/20LL Chip Disable to Data See Data Retention tCDR Retention Time Waveforms (below) Recovery Time tR tRC* = Read Cycle Time MIN. 2.0 - TYP. 0.05 10 MAX. 5.5 2 50 UNIT V mA µA 0 - - ns tRC* - - ns DATA RETENTION WAVEFORM VDR ≧ 2.0V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 PACKAGE OUTLINE DIMENSION θ 44-pin 400mil TSOP-Ⅱ Package Outline Dimension SYMBOLS A A1 A2 b c D E E1 e L ZD y Θ DIMENSIONS IN MILLMETERS MIN. NOM. MAX. 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.30 0.45 0.12 0.21 18.212 18.415 18.618 11.506 11.760 12.014 9.957 10.160 10.363 0.800 0.40 0.50 0.60 0.805 0.076 o o o 3 6 0 DIMENSIONS IN MILS MIN. NOM. MAX. 47.2 2.0 3.9 5.9 37.4 39.4 41.3 11.8 17.7 4.7 8.3 717 725 733 453 463 473 392 400 408 31.5 15.7 19.7 23.6 31.7 3 o o o 0 3 6 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 ® LY616416 5V 64K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.1 ORDERING INFORMATION LY616416 U V - WW XX Y Z Z : Packing Type Blank : Tube or Tray T : Tape Reel Y : Temperature Range Blank : (Commercial) 0°C ~ 70°C E : (Extended) -20°C ~ +80°C I : (Industrial) -40°C ~ +85°C XX : Power Type LL : Ultra Low Power WW : Access Time(Speed) V : Lead Information L : Green Package U : Package Type M : 44-pin 400 mil TSOP-II Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 11 ® LY616416 Rev. 1.1 5V 64K X 16 BIT HIGH SPEED CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 12