APTDF30H601G Fast Diode Full Bridge Power Module 3 VRRM = 600V IC = 30A @ Tc = 90°C 4 Application 5 1 • • • • 6 2 Features CR1 CR3 CR2 7 CR4 8 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers • • • • • • • 9 10 Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration Benefits • • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFSM Non-Repetitive Forward Surge Current Duty cycle = 50% 8.3ms Max ratings Unit 600 V TC = 25°C 42 TC = 90°C TJ = 45°C 30 A 250 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF30H601G – Rev 1 September, 2008 Absolute maximum ratings APTDF30H601G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 30A IF = 60A Tj = 125°C IF = 30A Tj = 25°C VR = 600V Tj = 125°C Min Typ 1.8 2.2 1.5 Max 2.2 V 250 500 VR = 200V Unit 36 µA pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 30A VR = 400V di/dt = 200A/µs IF = 30A VR = 400V di/dt=1000A/µs Min Typ Tj = 25°C 25 Tj = 125°C 160 Tj = 25°C Tj = 125°C 35 480 Tj = 25°C 3 Tj = 125°C 6 Tj = 125°C Max Unit ns nC A 85 ns 920 nC 20 A Thermal and package characteristics Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 Typ Max 1.2 175 125 100 4.7 80 Unit °C/W V °C N.m g 2-4 APTDF30H601G – Rev 1 September, 2008 Symbol RthJC VISOL TJ TSTG TC Torque Wt APTDF30H601G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge 175 trr, Reverse Recovery Time (ns) 100 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 TJ=125°C VR=400V 150 125 60 A 100 30 A 75 15 A 50 3.0 0 200 60 A 1.0 30 A 15 A 0.5 0.0 0 200 400 600 800 600 1000 1200 1000 1200 30 TJ=125°C VR=400V 25 60 A 20 15 30 A 15 A 10 5 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 50 200 Duty Cycle = 0.5 TJ=175°C 175 40 150 IF(AV) (A) C, Capacitance (pF) 800 IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 1.5 TJ=125°C VR=400V 400 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) 125 100 75 50 30 20 10 25 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) www.microsemi.com 3-4 APTDF30H601G – Rev 1 September, 2008 IF, Forward Current (A) 120 APTDF30H601G SP1 Package outline (dimensions in mm) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF30H601G – Rev 1 September, 2008 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com