MICRONAS HAL740

Hardware
Documentation
D at a S h e e t
®
®
HAL 700, HAL 740
Dual Hall-Effect Sensors
with Independent Outputs
Edition Nov. 30, 2009
DSH000029_002EN
HAL700, HAL740
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person
or entity of such revision or changes. For further
advice please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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Nov. 30, 2009; DSH000029_002EN
Micronas
HAL700, HAL740
DATA SHEET
Contents
Page
Section
Title
4
4
4
5
5
5
5
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
1.7.
Introduction
Features
Family Overview
Marking Code
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability and Welding
Pin Connections
6
2.
Functional Description
9
9
10
10
10
10
11
12
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
16
16
18
4.
4.1.
4.2.
Type Description
HAL700
HAL740
20
20
20
20
20
5.
5.1.
5.2.
5.3.
5.4.
Application Notes
Ambient Temperature
Extended Operating Conditions
Start-up Behavior
EMC and ESD
22
6.
Data Sheet History
Micronas
Nov. 30, 2009; DSH000029_002EN
3
HAL700, HAL740
DATA SHEET
Dual Hall-Effect Sensors with Independent Outputs
1.2. Family Overview
Release Note: Revision bars indicate significant
changes to the previous edition.
The types differ according to the switching behavior of
the magnetic switching points at the both Hall plates
S1 and S2.
1. Introduction
The HAL700 and the HAL740 are monolithic CMOS
Hall-effect sensors consisting of two independent
switches controlling two independent open-drain outputs. The Hall plates of the two switches are spaced
2.35 mm apart.
The devices include temperature compensation and
active offset compensation. These features provide
excellent stability and matching of the switching points
in the presence of mechanical stress over the whole
temperature and supply voltage range.
The sensors are designed for industrial and automotive applications and operate with supply voltages
from 3.8 V to 24 V in the ambient temperature range
from −40 °C up to 125 °C.
Type
Switching Behavior
See
Page
HAL700
S1: latching
S2: latching
16
HAL740
S1: unipolar north sensitive
S2: unipolar south sensitive
18
Latching Sensors:
The output turns low with the magnetic south pole on
the branded side of the package. The output maintains
its previous state if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
The HAL700 and the HAL740 are available in the
SMD-package SOT89B-2.
Unipolar Sensors:
1.1. Features
– two independent Hall-switches
– distance of Hall plates: 2.35 mm
– switching offset compensation at typically 150 kHz
– operation from 3.8 V to 24 V supply voltage
– operation with static and dynamic magnetic fields up
to 10 kHz
– overvoltage protection at all pins
In case of a south-sensitive switch, the output turns
low with the magnetic south pole on the branded side
of the package and turns high if the magnetic field is
removed. The switch does not respond to the
magnetic north pole on the branded side.
In case of a north-sensitive switch, the output turns low
with the magnetic north pole on the branded side of
the package and turns high if the magnetic field is
removed. The switch does not respond to the magnetic south pole on the branded side.
– reverse-voltage protection at VDD-pin
– robustness of magnetic characteristics against
mechanical stress
– short-circuit protected open-drain outputs
by thermal shut down
– constant switching points over a wide
supply voltage range
– EMC corresponding to ISO 7637
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Nov. 30, 2009; DSH000029_002EN
Micronas
HAL700, HAL740
DATA SHEET
1.3. Marking Code
1.5. Hall Sensor Package Codes
All Hall sensors have a marking on the package surface (branded side). This marking includes the name
of the sensor and the temperature range.
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT89B-2
Type
Type: 700
Temperature Range
K
E
Example: HAL700SF-K
HAL700
700K
700E
HAL740
740K
740E
→ Type: 700
→ Package: SOT89B-2
→ Temperature Range: TJ = −40 °C to +140 °C
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
K: TJ = −40 °C to +140 °C
1.6. Solderability and Welding
E: TJ = −40 °C to +100 °C
Soldering
Note: Due to power dissipation, there is a difference
between the ambient temperature (TA) and junction temperature. Please refer to section 5.1. on
page 20 for details.
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.7. Pin Connections
1 VDD
3 S1-Output
2 S2-Output
4 GND
Fig. 1–1: Pin configuration
Micronas
Nov. 30, 2009; DSH000029_002EN
5
HAL700, HAL740
DATA SHEET
2. Functional Description
Clock
The HAL700 and the HAL740 are monolithic integrated circuits with two independent subblocks each
consisting of a Hall plate and the corresponding comparator. Each subblock independently switches the
comparator output in response to the magnetic field at
the location of the corresponding sensitive area. If a
magnetic field with flux lines perpendicular to the sensitive area is present, the biased Hall plate generates a
Hall voltage proportional to this field. The Hall voltage
is compared with the actual threshold level in the comparator. The subblocks are designed to have closely
matched switching points. The output of comparator 1
attached to S1 controls the open drain output at Pin 3.
Pin 2 is set according to the state of comparator 2 connected to S2.
The temperature-dependent bias – common to both
subblocks – increases the supply voltage of the Hall
plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the
magnetic field exceeds the threshold levels, the comparator switches to the appropriate state. The built-in
hysteresis prevents oscillations of the outputs.
The magnetic offset caused by mechanical stress is
compensated for by use of “switching offset compensation techniques”. Therefore, an internal oscillator
provides a two-phase clock to both subblocks. For
each subblock, the Hall voltage is sampled at the end
of the first phase. At the end of the second phase, both
sampled and actual Hall voltages are averaged and
compared with the actual switching point.
Shunt protection devices clamp voltage peaks at the
output pins and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD-pin for
reverse voltages ranging from 0 V to −15 V.
Fig. 2–2 and Fig. 2–3 on page 7 show how the output
signals are generated by the HAL700 and the
HAL740. The magnetic flux density at the locations of
the two Hall plates is shown by the two sinusodial
curves at the top of each diagram. The magnetic
switching points are depicted as dashed lines for each
Hall plate separately.
6
t
BS1
BS1on
t
BS2
BS2on
t
Pin 2
VOH
VOL
t
Pin 3
VOH
VOL
t
IDD
t
1/fosc
tf
tf
Fig. 2–1: HAL700 timing diagram with respect to the
clock phase
Nov. 30, 2009; DSH000029_002EN
Micronas
HAL700, HAL740
DATA SHEET
HAL700
Bon,S1
Boff,S1
Bon,S2
Boff,S2
S1
Output Pin 3
S2
Output Pin 2
0
time
Fig. 2–2: HAL700 timing diagram
HAL740
Boff,S1
Bon,S1
Bon,S2
Boff,S2
S1
Output Pin 3
S2
Output Pin 2
0
time
Fig. 2–3: HAL740 timing diagram
Micronas
Nov. 30, 2009; DSH000029_002EN
7
HAL700, HAL740
1
VDD
Reverse
Voltage and
Overvoltage
Protection
Temperature
Dependent
Bias
DATA SHEET
Short Circuit
and
Overvoltage
Protection
Hysteresis
Control
Hall Plate 1
Comparator
3
Switch
Output
S1-Output
S1
Hall Plate 2
Comparator
2
Clock
Output
Switch
S2-Output
S2
4
GND
Fig. 2–4: HAL700 and HAL740 block diagram
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Nov. 30, 2009; DSH000029_002EN
Micronas
HAL700, HAL740
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas
Weight approximately 0.034 g
Micronas
Nov. 30, 2009; DSH000029_002EN
9
HAL700, HAL740
DATA SHEET
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
SOT89B-2
x1+x2
(2.35±0.001) mm
x1=x2
1.175 mm nominal
y
0.975 mm nominal
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−15
281)
V
VO
Output Voltage
2, 3
−0.3
281)
V
IO
Continuous Output Current
2, 3
−
201)
mA
TJ
Junction Temperature Range
−40
170
°C
1)
as long as TJmax is not exceeded
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
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Nov. 30, 2009; DSH000029_002EN
Micronas
HAL700, HAL740
DATA SHEET
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
1
3.8
−
24
V
IO
Continuous Output Current
3
0
−
10
mA
VO
Output Voltage
(output switch off)
3
0
−
24
V
Micronas
Nov. 30, 2009; DSH000029_002EN
11
HAL700, HAL740
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, GND = 0 V.
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
IDD
Supply Current
1
3
5.5
9
mA
TJ = 25 °C
IDD
Supply Current
over Temperature Range
1
2
7
10
mA
VDDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
IDD = 25 mA, TJ = 25 °C, t = 2 ms
VOZ
Overvoltage Protection
at Output
2, 3
−
28
32
V
IO = 20 mA, TJ = 25 °C, t = 15 ms
VOL
Output Voltage
2, 3
−
130
280
mV
IOL = 10 mA, TJ = 25 °C
VOL
Output Voltage over
Temperature Range
2, 3
−
130
400
mV
IOL = 10 mA
IOH
Output Leakage Current
2, 3
−
0.06
0.1
μA
Output switched off, TJ = 25 °C,
VOH = 3.8 V to 24 V
IOH
Output Leakage Current over
Temperature Range
2, 3
−
−
10
μA
Output switched off, TJ ≤ 140 °C,
VOH = 3.8 V to 24 V
fosc
Internal Sampling Frequency over
Temperature Range
−
100
150
−
kHz
ten(O)
Enable Time of Output after
Setting of VDD
1
−
50
−
μs
VDD = 12 V,
B>Bon + 2 mT or B<Boff − 2 mT
tr
Output Rise Time
2, 3
−
0.2
−
μs
VDD = 12 V, RL = 2.4 kΩ, CL = 20 pF
tf
Output FallTime
2, 3
−
0.2
−
μs
VDD = 12 V, RL = 2.4 kΩ, CL = 20 pF
RthJSB
case
SOT89B-2
Thermal Resistance Junction
to Substrate Backside
−
−
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size see Fig. 3–2
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–2: Recommended pad size SOT89B-2
Dimensions in mm
12
Nov. 30, 2009; DSH000029_002EN
Micronas
HAL700, HAL740
DATA SHEET
mA
25
mA
6
HAL 7xx
HAL 7xx
20
IDD
IDD
TA = –40 °C
15
5
TA = 25 °C
VDD = 24 V
VDD = 12 V
TA=140 °C
10
5
4
0
VDD = 3.8 V
–5
3
–10
–15
–15–10 –5 0
2
–50
5 10 15 20 25 30 35 V
0
50
TA
VDD
Fig. 3–3: Typical supply current
versus supply voltage
mA
6.0
IDD
Fig. 3–5: Typical supply current
versus ambient temperature
HAL 7xx
5.5
150 °C
100
kHz
190
HAL 7xx
TA = –40 °C
5.0
fosc 180
TA = 25 °C
4.5
4.0
TA = 100 °C
170
3.5
TA = 140 °C
3.0
2.5
160
VDD = 3.8 V
2.0
1.5
150
1.0
VDD = 4.5 V...24 V
0.5
0
1
2
3
4
5
6
7
8 V
140
–50
Micronas
50
100
150
200 °C
TA
VDD
Fig. 3–4: Typical supply current
versus supply voltage
0
Fig. 3–6: Typ. internal chopper frequency
versus ambient temperature
Nov. 30, 2009; DSH000029_002EN
13
HAL700, HAL740
DATA SHEET
kHz
240
mV
400
HAL 7xx
HAL 7xx
IO = 10 mA
350
fosc
220
VOL
300
200
250
TA = 140 °C
200
180
TA = 100 °C
TA = 25 °C
160
150
TA = 25 °C
TA = –40 °C
TA = 140 °C
TA = –40 °C
100
140
50
120
0
5
10
15
20
25
0
30 V
0
5
10
15
20
25
VDD
VDD
Fig. 3–7: Typ. internal chopper frequency
versus supply voltage
kHz
240
fosc
30 V
Fig. 3–9: Typical output low voltage
versus supply voltage
mV
400
HAL 7xx
220
HAL 7xx
IO = 10 mA
VOL
300
200
180
TA = 140 °C
200
TA =100 °C
TA = 25 °C
160
TA = –40 °C
100
3
3.5
4.0
4.5
5.0
5.5
0
6.0 V
VDD
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 3–8: Typ. internal chopper frequency
versus supply voltage
14
TA = –40 °C
TA = 140 °C
140
120
TA = 25 °C
Fig. 3–10: Typical output low voltage
versus supply voltage
Nov. 30, 2009; DSH000029_002EN
Micronas
HAL700, HAL740
DATA SHEET
mV
300
HAL 7xx
µA
HAL 7xx
102
IO = 10 mA
VDD = 3.8 V
101
250
VOL
VDD = 4.5 V
VDD = 24 V
200
IOH
100
10–1
150
10–2
100
VOH = 3.8 V
10–3
50
10–4
VOH = 24 V
0
–50
0
50
100
150 °C
10–5
–50
TA
50
100
150
200 °C
TA
Fig. 3–11: Typ. output low voltage
versus ambient temperature
µA
0
Fig. 3–13: Typical output leakage current
versus ambient temperature
HAL 7xx
102
101
IOH
100
TA = 140 °C
10–1
10–2
TA = 100 °C
10–3
10–4
TA = 25 °C
10–5
10–6
15
20
25
30
35 V
VOH
Fig. 3–12: Typical output leakage current
versus output voltage
Micronas
Nov. 30, 2009; DSH000029_002EN
15
HAL700
DATA SHEET
4. Type Description
Magnetic Thresholds
(quasistationary: dB/dt<0.5 mT/ms)
4.1. HAL700
The HAL700 consists of two independent latched
switches (see Fig. 4–1) with closely matched magnetic
characteristics controlling two independent open-drain
outputs. The Hall plates of the two switches are
spaced 2.35 mm apart.
In combination with an active target providing a
sequence of alternating magnetic north and south
poles, the sensor forms a system generating the signals required to control position, speed, and direction
of the target movement.
Magnetic Features
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
as not otherwise specified
Typical characteristics for TJ = 25 °C and VDD = 5 V
Parameter
On-Point
BS1on, BS2on
Off-Point
BS1off,, BS2off
Unit
Tj
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
12.5
16.3
20
−20
−16.3
−12.5
mT
25 °C
10.7
14.9
19.1
−19.1
−14.9
−10.7
mT
100 °C
7.7
12.5
17.3
−17.3
−12.5
−7.7
mT
140 °C
6.0
10.9
16.0
−16.0
−10.9
−6.0
mT
– two independent Hall-switches
– distance of Hall plates: 2.35 mm
– typical BON: 14.9 mT at room temperature
– typical BOFF: −14.9 mT at room temperature
Matching BS1 and BS2
(quasistationary: dB/dt<0.5 mT/ms)
– temperature coefficient of −2000 ppm/K in all magnetic characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
as not otherwise specified
– operation with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Typical characteristics for TJ = 25 °C and VDD = 5 V
VO
BHYS
VOL
BOFF
0
BS1on − BS2on
Parameter
Output Voltage
B
BON
BS1off − BS2off
Unit
Tj
Min.
Typ
Max.
Min.
Typ
Max.
−40 °C
−7.5
0
7.5
−7.5
0
7.5
mT
25 °C
−7.5
0
7.5
−7.5
0
7.5
mT
100 °C
−7.5
0
7.5
−7.5
0
7.5
mT
140 °C
−7.5
0
7.5
−7.5
0
7.5
mT
Fig. 4–1: Definition of magnetic switching points for
the HAL700
Hysteresis Matching
(quasistationary: dB/dt<0.5 mT/ms)
Positive flux density values refer to magnetic south
pole at the branded side of the package.
Applications
Typical characteristics for TJ = 25 °C and VDD = 5 V
The HAL700 is the ideal sensors for position-control
applications with direction detection and alternating
magnetic signals such as:
– multipole magnet applications,
– rotating speed and direction measurement,
position tracking (active targets), and
– window lifters.
16
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
as not otherwise specified
Parameter
Tj
(BS1on − BS1off) / (BS2on − BS2off)
Unit
Min.
Typ.
Max.
−40 °C
0.85
1.0
1.2
−
25 °C
0.85
1.0
1.2
−
100 °C
0.85
1.0
1.2
−
140 °C
0.85
1.0
1.2
−
Nov. 30, 2009; DSH000029_002EN
Micronas
HAL700
DATA SHEET
mT
20
mT
25
HAL 700
BON 15
BOFF
HAL 700
20
BON
BOFF 15
BON
BONmax
10
5
10
BONtyp
5
BONmin
TA = −40 °C
TA = 25 °C
0
TA =100 °C
VDD = 4.5 V... 24 V
TA = 140 °C
−5
VDD = 3.8 V
0
−5
BOFFmax
−10
BOFFtyp
−10
−15
−20
−20
0
5
10
15
20
25
30 V
−25
−50
Fig. 4–2: Magnetic switching points
versus supply voltage
mT
20
0
50
100
150 °C
TA, TJ
VDD
BON
BOFF
BOFFmin
BOFF
−15
Fig. 4–4: Magnetic switching points
versus ambient temperature
HAL 700
15
BON
10
5
TA = −40 °C
TA = 25 °C
0
TA = 100 °C
TA = 140 °C
−5
−10
−15
−20
BOFF
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–3: Magnetic switching points
versus supply voltage
Micronas
Nov. 30, 2009; DSH000029_002EN
17
HAL740
DATA SHEET
4.2. HAL740
Applications
The HAL740 consists of two independent unipolar
switches (see Fig. 4–5) with complementary magnetic
characteristics controlling two independent open-drain
outputs. The Hall plates of the two switches are
spaced 2.35 mm apart.
The HAL740 is the ideal sensor for applications which
require both magnetic polarities, such as:
– position and direction detection, or
– position and end point detection with either magnetic pole (omnipolar switch).
The S1-Output turns low with the magnetic north pole
on the branded side of the package and turns high if
the magnetic field is removed. It does not respond to
the magnetic south pole on the branded side.
Output Voltage
VO
The S2-Output turns low with the magnetic south pole
on the branded side of the package and turns high if
the magnetic field is removed. It does not respond to
the magnetic south pole on the branded side.
BHYS
BHYS
VOL
BON,S1 BOFF,S1
Magnetic Features
– two independent Hall-switches
BOFF,S2 BON,S2
0
B
Fig. 4–5: Definition of magnetic switching points for
the HAL740
– distance of Hall plates: 2.35 mm
– temperature coefficient of −2000 ppm/K in all magnetic characteristics
– operation with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Magnetic Characteristics
(quasistationary: dB/dT < 0.5 T/ms) at TJ = −40 °C to +100 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V. Absolute values common to both Hall switches. The Hall switches S1 and S2
only differ in sign. For S1 the sign is negative, for S2 positive. Positive flux density values refer to the magnetic south
pole at the branded side of the package.
Parameter
On point BON
TJ
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
8.5
12.3
16.0
5.0
8.8
12.5
2.0
−
5.5
−
10.6
−
mT
25 °C
7.0
11.5
16.0
3.5
8.0
12.5
2.0
−
6.0
−
9.8
−
mT
100 °C
5.5
10.8
16.0
2.0
7.0
12.5
1.5
−
6.5
−
8.9
−
mT
140 °C
4.6
10.4
16.0
1.1
6.8
12.5
1.0
−
7.0
−
8.6
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Nov. 30, 2009; DSH000029_002EN
Micronas
HAL740
DATA SHEET
mT
16
mT
20
HAL 740
HAL 740
VDD = 3.8 V
BON
BOFF 14
VDD = 4.5 V... 24 V
BON
BOFF
BON
BONmax
15
TA = −40 °C
TA = 25 °C
12
BOFFmax
BONtyp
TA =100 °C
10
TA = 140 °C
10
BOFF
BOFFtyp
5
BONmin
8
BOFFmin
6
0
5
10
15
20
25
0
–50
30 V
50
100
150 °C
TA, TJ
VDD
Fig. 4–6: Magnetic switching points
versus supply voltage
mT
16
0
Fig. 4–8: Magnetic switching points
versus ambient temperature
HAL 740
BON
BOFF 14
BON
TA = −40 °C
12
TA = 25 °C
TA = 100 °C
TA = 140 °C
10
BOFF
8
6
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–7: Magnetic switching points
versus supply voltage
Micronas
Nov. 30, 2009; DSH000029_002EN
19
HAL700, HAL740
DATA SHEET
5. Application Notes
Note: The functionality of the sensor below 3.8 V is not
tested. For special test conditions, please contact Micronas.
5.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
5.3. Start-up Behavior
TJ = TA + ΔT
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the “Characteristics” (see Section 3.6. on
page 12).
At static conditions and continuous operation, the following equation applies:
ΔT = IDD * VDD * Rth
During the initialization time, the output states are not
defined and the outputs can toggle. After ten(O), both
outputs will be either high or low for a stable magnetic
field (no toggling). The outputs will be low if the applied
magnetic flux density B exceeds BON and high if B
drops below BOFF.
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
For magnetic fields between BOFF and BON, the output
states of the Hall sensor after applying VDD will be
either low or high. In order to achieve a well-defined
output state, the applied magnetic flux density must be
above BONmax, respectively, below BOFFmin.
TAmax = TJmax − ΔT
5.2. Extended Operating Conditions
5.4. EMC and ESD
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see Section 3.5. on page 11).
For applications that cause disturbances on the supply
line or radiated disturbances, a series resistor and a
capacitor are recommended (see Fig. 5–1). The series
resistor and the capacitor should be placed as closely
as possible to the Hall sensor.
Supply Voltage Below 3.8 V
Please contact Micronas for detailed investigation
reports with EMC and ESD results.
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
RV
220 Ω
RL
1 VDD
2.4 kΩ
RL
2.4 kΩ
3 S1-Output
VEMC
VP
2 S2-Output
4.7 nF
20 pF
20 pF
4 GND
Fig. 5–1: Test circuit for EMC investigations
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Nov. 30, 2009; DSH000029_002EN
Micronas
HAL700, HAL740
DATA SHEET
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Micronas
Nov. 30, 2009; DSH000029_002EN
21
HAL700, HAL740
DATA SHEET
6. Data Sheet History
1. : “HAL700, HAL740 Dual Hall-Effect Sensors with
Independent Outputs”, June 13, 2002, 6251-4771DS. First release of the data sheet.
2. Data Sheet: “HAL700, HAL740 Dual Hall-Effect
Sensors with Independent Outputs”, Sept. 13, 2004,
6251-477-2DS. Second release of the data sheet.
Major changes:
– new package diagram for SOT89B-2
3. Data Sheet: “HAL700, HAL740 Dual Hall-Effect
Sensors with Independent Outputs”, Nov. 30, 2009,
DSH000029_002EN. Third release of the data
sheet.
Major changes:
– Section 1.6. “Solderability and Welding” updated
– Section 2–3 HAL740 timing diagram
– Section 3.1. package diagram updated
– Section 3.6. Recommended footprint SOT89B
added
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
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Nov. 30, 2009; DSH000029_002EN
Micronas