MICROSEMI APTGT75H60T3G

APTGT50H60T3G
Full - Bridge
Trench + Field Stop IGBT®
Power Module
CR3
CR1
19
Q2
22
7
23
8
CR2
26
Q3
11
10
CR4
Q4
4
27
3
29
31
30
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TJ = 150°C
Max ratings
600
80
50
100
±20
176
100A @ 550V
Unit
V
A
June, 2006
Q1
18
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT50H60T3G – Rev 1,
13 14
VCES = 600V
IC = 50A @ Tc = 80°C
APTGT50H60T3G
All ratings @ Tj = 25°C unless otherwise specified
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 150°C
VGE = VCE , IC = 600µA
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
IRM
Test Conditions
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
Min
Typ
Max
Unit
250
1.9
µA
6.5
600
V
nA
Max
Unit
3150
200
95
110
45
200
40
ns
ns
60
0.3
0.43
1.35
1.75
Typ
mJ
mJ
Max
600
VR=600V
IF = 50A
VGE = 0V
IF = 50A
VR = 300V
di/dt =1800A/µs
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Unit
V
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
V
pF
120
50
250
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
5.0
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
R G = 8.2Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
R G = 8.2Ω
VGE = ±15V
Tj = 25°C
VBus = 300V
Tj = 150°C
IC = 50A
Tj = 25°C
R G = 8.2Ω
Tj = 150°C
Symbol Characteristic
Typ
1.5
1.7
5.8
VGE = 0V
VCE = 25V
f = 1MHz
Reverse diode ratings and characteristics
VRRM
Min
250
500
50
1.6
1.5
100
150
2.6
5.4
0.6
1.2
µA
A
2
V
ns
June, 2006
Symbol Characteristic
µC
mJ
2-5
APTGT50H60T3G – Rev 1,
Electrical Characteristics
APTGT50H60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.85
1.42
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
2.5
°C/W
V
175
125
100
4.7
110
°C
N.m
g
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT50H60T3G – Rev 1,
28
17
1
June, 2006
SP3 Package outline (dimensions in mm)
APTGT50H60T3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
100
100
T J=25°C
VGE=13V
TJ=150°C
60
60
VGE=15V
40
40
20
20
TJ=25°C
0
0
0.5
1
1.5
VCE (V)
VGE =9V
0
2
2.5
0
3
3.5
60
E (mJ)
IC (A)
2.5
40
1
1.5
2
VCE (V)
2.5
VCE = 300V
VGE = 15V
R G = 8.2Ω
TJ = 150°C
3
TJ =25°C
80
0.5
3
3.5
Energy losses vs Collector Current
Transfert Characteristics
100
VGE=19V
80
T J=125°C
IC (A)
IC (A)
80
T J = 150°C
Eoff
2
Er
1.5
T J=125°C
1
T J=150°C
20
TJ=25°C
0
0
5
6
7
Eon
0.5
8
9
10
11
0
12
20
40
VGE (V)
Switching Energy Losses vs Gate Resistance
3
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
2
80
100
Reverse Bias Safe Operating Area
125
Eoff
100
Eon
IC (A)
E (mJ)
2.5
60
IC (A)
1.5
75
50
1
Er
0.5
VGE=15V
T J=150°C
R G=8.2Ω
25
Eon
0
0
5
15
25
35
45
55
Gate Resistance (ohms)
65
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
IGBT
0.9
0.7
June, 2006
0.8
0.5
0.4
0.2
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4-5
APTGT50H60T3G – Rev 1,
Thermal Impedance (°C/W)
1
APTGT50H60T3G
Forward Characteristic of diode
100
V CE =300V
D=50%
RG=8.2Ω
T J=150°C
100
ZVS
80
ZCS
60
80
T c=85°C
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
40
60
T J=125°C
40
TJ =150°C
20
Hard
switching
20
T J=25°C
0
0
0
20
40
IC (A)
60
80
0
0.4
0.8
1.2
1.6
V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2
1
0.7
0.8
0.5
0.6
0.3
0.4
0.2
Diode
0.9
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT50H60T3G – Rev 1,
June, 2006
Thermal Impedance (°C/W)
1.6