2N5003 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N5002 • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5003J) • JANTX level (2N5003JX) • JANTXV level (2N5003JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV Features • Radiation testing (total dose) upon request • • • • Hermetically sealed TO-59 metal can Also available in chip configuration Chip geometry 9702 Reference document: MIL-PRF-19500/535 Benefits • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 80 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 5.5 Volts IC 5 A W mW/°C W mW/°C RθJA RθJC 2 11.4 58 331 88 3 TJ -65 to +200 °C TSTG -65 to +200 °C Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. C PT PT °C/W Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5003 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Collector-Emitter Cutoff Current ICEO Collector-Emitter Cutoff Current ICEX Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Thermal Impedance Test Conditions Min IC = 100 mA Typ VCE = 60 Volts, VEB = 2 Volts, TA = 150°C VCE = 60 Volts VCE = 100 Volts VEB = 4 Volts VEB = 5.5 Volts On Characteristics Units Volts 50 µA 500 µA 1 1 1 1 3.1 µA mA µA mA °C/W 80 VCE = 40 Volts ICES1 ICES2 IEBO1 IEBO2 θJC Max Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 50 mA, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts TA = -55°C VCE = 5 Volts, IC = 2.5 A IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA Min 20 30 20 15 Test Conditions VCE = 5 Volts, IC = 500 mA, f = 10 MHz VCE = 5 Volts, IC = 100 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 90 1.45 1.45 2.20 0.75 1.50 Volts Volts Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| hFE COBO Typ Max Units 250 pF 0.5 1.4 0.5 1.5 µs 6 20 Switching Characteristics Saturated Turn-On Time Rise Time Fall Time Saturated Turn-Off Time Copyright 2002 Rev. C tON tr tf tOFF IC = 5 A, IB1=IB2 = 500 mA, VBE = 3.7 Volts, RL = 6 Ω Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2