APTGT150A120D1G Phase leg Trench + Field Stop IGBT Power Module Q1 VCES = 1200V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 3 4 5 Q2 Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M5 power connectors 1 6 7 2 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 300A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A V W December, 2009 IC Max ratings 1200 220 150 300 ±20 690 RBSOA Parameter Collector - Emitter Breakdown Voltage These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTGT150A120D1G – Rev 1 Symbol VCES APTGT150A120D1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 6 mA VGE = 20V, VCE = 0V Min Typ 5.0 1.7 2.0 5.8 Max Unit 250 2.1 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=150A VCE=600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A RG = 4.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C RG = 4.7Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Min Typ 10.8 0.56 0.5 nF 1.4 µC 250 90 550 ns 130 300 100 650 ns 180 11 mJ 26 600 A Reverse diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=1200V IF = 150A VGE = 0V IF = 150A VR = 600V di/dt =3000A/µs Err Reverse Recovery Energy www.microsemi.com Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ Max 250 500 150 1.6 1.6 250 350 15 29 7 12 Unit V µA A 2.1 V December, 2009 IRM Test Conditions ns µC mJ 2-4 APTGT150A120D1G – Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT150A120D1G Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 -40 -40 -40 2 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight Typ IGBT Diode For terminals To Heatsink M5 M6 Max 0.18 0.34 Unit °C/W V 150 125 125 3.5 5 180 °C N.m g D1 Package outline (dimensions in mm) Typical Performance Curve Forward Characteristic of diode 300 40 ZCS 30 ZVS VCE=600V D=50% RG=4.7 Ω TJ=125°C TC=75°C 250 200 IF (A) 20 TJ=125°C 150 100 50 TJ=25°C 0 0 10 TJ=125°C 50 Hard switching 90 130 IC (A) 170 0 210 0.4 0.8 1.2 1.6 VF (V) 2 2.4 December, 2009 10 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.1 0.05 Diode 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 3-4 APTGT150A120D1G – Rev 1 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 50 APTGT150A120D1G Output Characteristics (VGE=15V) Output Characteristics 300 300 VGE=17V TJ=125°C 150 VGE=15V 150 100 100 50 50 VGE=9V 0 0 1 2 VCE (V) 3 4 0 1 2 VCE (V) 3 4 Energy losses vs Collector Current Transfert Characteristics 300 60 TJ=25°C 250 VCE = 600V VGE = 15V RG = 4.7 Ω TJ = 125°C 50 200 E (mJ) 40 TJ=125°C 150 Eoff Eon 30 20 100 TJ=125°C 50 Err 10 Eon 0 0 5 6 7 8 9 10 11 0 12 50 100 Switching Energy Losses vs Gate Resistance 50 250 300 Reverse Bias Safe Operating Area Eon 300 250 Eoff IC (A) 30 20 200 350 VCE = 600V VGE =15V IC = 150A TJ = 125°C 40 150 IC (A) VGE (V) E (mJ) VGE=13V 200 200 0 IC (A) TJ = 125°C 250 TJ=25°C IC (A) IC (A) 250 Eon 200 150 VGE=15V TJ=125°C RG=4.7 Ω 100 Err 10 50 0 0 4 8 12 16 20 24 28 Gate Resistance (ohms) 0 32 400 800 1200 1600 VCE (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 0.9 IGBT 0.7 0.12 0.04 December, 2009 0.5 0.08 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTGT150A120D1G – Rev 1 Thermal Impedance (°C/W) 0.2