30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s 30 kHz - 40 GHz GaAs MMIC distributed amplifier has a gain of 15 dB with a 4.5 dB noise figure at 26 GHz. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave, military, wideband and instrumentation applications. Absolute Maximum Ratings1 Parameters/Conditions Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg1) Gate Current (Ig1) Gate Bias Voltage (Vg2) Gate Current (Ig2) CW Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) Min. Max. +10.0V 340 mA -9.5V -38 mA -3.5V -20 mA -65 ºC -55ºC +1 mA +4.0V 17 dBm +165 ºC +150 ºC (1) Absolute maximum ratings for continuous operation unless otherwise noted. Bias Settings Parameter Units Drain Current (Id), V=7V, VG1=-2.5V*, VG2=open circuit mA Drain Current (Id), V=4V, VG1=-2.5V*, VG2=open circuit mA Drain Voltage (Vd) V Gate Bias (Vg1) V Gate Bias (Vg2) V Min. 4 Typ. 200 160 7 Max. Function Supply drain current to device Adjusted to set drain current Adjusted for gain control *approximate Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 10 Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Electrical Characteristics for High Power Applications1 Vdd=7V, Idd(Q)=200 mA, Zin=Zo=50 Parameter and Test Conditions Small Signal Gain (S21) Gain Flatness ( S21) Input Return Loss (S11) Output Return Loss (S22) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) @ 22 GHz Saturated RF Power (Psat) @ 22 GHz Output 3rd Order Intercept Point (OIP3) @ 22 GHz NF Noise Figure (NF) @ 26 GHz NF Noise Figure (NF) @ 40 GHz Units dB dB dB dB dB dBm dBm dBm dB dB Min. Typ. 15 +/-0.75 16 16 28 22 24.5 27 4.5 6.5 Max. Units dB dB dB dB dB dBm dBm dBm dBm dB dB Min. 14.02 Typ. 15.5 +/-0.75 16 16 28 22 22.5 24.5 27 4.5 6.5 Max. Electrical Characteristics1 Vdd=6V, Idd(Q)=187 mA, Zin=Zo=50 Parameter and Test Conditions Small Signal Gain (S21) Gain Flatness ( S21) Input Return Loss (S11) Output Return Loss (S22) Reverse Isolation (S12) Output Power with 7 dB Input Power (Pout) Output Power for 1 dB Compression (P1dB) @ 22 GHz Saturated RF Power (Psat) @ 22 GHz Output 3rd Order Intercept Point (OIP3) @ 22 GHz NF Noise Figure (NF) @ 26 GHz NF Noise Figure (NF) @ 40 GHz 202 Electrical Characteristics for High Gain, Low Noise Applications1 Vdd=4V, Idd(Q)=160 mA, Zin=Zo=50 Parameter and Test Conditions Small Signal Gain (S21) Gain Flatness ( S21) Input Return Loss (S11) Output Return Loss (S22) Reverse Isolation (S12) Output Power for 1dB Compression (P1dB) @ 22 GHz Saturated RF Power (Psat) @ 22 GHz Output 3rd Order Intercept Point (OIP3) @ 22 GHz NF Noise Figure (NF) @ 26 GHz NF Noise Figure (NF) @ 40 GHz Units dB dB dB dB dB dBm dBm dBm dB dB Min. Typ. 16 +/-0.75 16 16 28 18 22 30 3.5 5.5 Max. (1) Data measured in wafer form with backside temperature T = 25°C unless otherwise noted. (2) 100% on-wafer RF test at 5, 25 and 40 GHz Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 10 Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Distributed Amplifier Measurements XD1008-BD: S-parameters (dB) Blue = 7V_200mA, Red = 4V_160mA , VG2 = Open Circuit XD1008-BD S-parameters (dB) at Bias 7 V_200 mA, Freq = 0 GHz - 70 GHz 20 20 16 16 S2 12 12 8 S-parameters (dB) S-Parameters (dB) 8 4 0 -4 -8 S1 -12 4 0 -4 -8 -12 -16 -16 -20 -20 -24 -24 S2 S1 -28 -28 0 5 10 15 20 25 30 35 40 45 0 50 5 10 15 20 25 XD1008-BD: Gain Control (dB) vs VG2A Bias (V) Vd = 4 V, Freq = 5 to 40 GHz 15 10 0 Vd = 4 V, Freq = 5 GHz -5 Vd = 4 V, Freq = 10 GHz -10 Vd = 4 V, Freq = 15 GHz -15 Vd = 4 V, Freq = 20 GHz -20 Vd = 4 V, Freq = 25 GHz -25 Vd = 4 V, Freq = 30 GHz S21 (dB) S21 (dB) 5 Vd = 4 V, Freq = 35 GHz -30 Vd = 4 V, Freq = 40 GHz -35 -40 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -1.6 40 45 50 55 60 65 70 Vd = 7 V, Freq = 5 GHz Vd = 7 V, Freq = 10 GHz Vd = 7 V, Freq = 15 GHz Vd = 7 V, Freq = 20 GHz Vd = 7 V, Freq = 25 GHz Vd = 7 V, Freq = 30 GHz Vd = 7 V, Freq = 35 GHz Vd = 7 V, Freq = 40 GHz -1.4 -1.2 -1 -0.8 -0.6 VG2A (V) -0.4 -0.2 0 0.2 0.4 0.6 VG2A (V) XD1008-BD: Noise Figure (dB) vs Frequency (GHz) Blue = 7V_200mA, Red = 4V_160mA XD1008-BD: Total Drain Current (mA) vs VG2A (V) Red = 4 V, Blue = 7 V 220 10 200 9 180 8 160 7 140 6 NF (dB) Total Drain Current (mA) 35 XD1008-BD: Gain Control (dB) vs VG2A Bias (V) Vd = 7 V, Freq = 5 to 40 GHz 20 -1.4 30 Frequency (GHz) Frequency (GHz) 120 100 80 5 4 3 60 40 2 20 1 0 0 -2 -1.5 -1 -0.5 0 0.5 VG2A Voltage 1 1.5 2 2.5 3 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Frequency (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 10 Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 18 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Distributed Amplifier Measurements (cont.) XD1008-BD: Noise Figure (dB) vs Frequency (GHz) Blue = 7V_200mA , Red = 4V_160mA 10 10 9 9 8 8 7 7 6 6 NF (dB) NF (dB) XD1008-BD: Noise Figure (dB) vs Frequency (GHz) Blue = 7V_200mA, Red = 4V_160mA 5 4 3 5 4 3 2 2 1 1 0 18 19 20 21 22 23 24 25 26 27 28 29 30 0 28 Frequency (GHz) 29 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) XD1008-BD: Pout (dBm) vs. Pin (dBm) RF = 1.5 to 18 GHz, Vdd = 7 V, Idd = 200 mA XD1008-BD: Vdelta (V) vs. Pout (dBm) Freq = 1.5 to 18 GHz, Vdd = 7.0 V, Idd = 200 mA 26 1 24 0.9 Vdelta, Vdd V=7, Freq GHz=1.5 22 0.8 Vdelta, Vdd V=7, Freq GHz=6 0.7 Vdelta, Vdd V=7, Freq GHz=10 0.6 Vdelta, Vdd V=7, Freq GHz=14 0.5 Vdelta, Vdd V=7, Freq GHz=18 Vdelta (V) Pout (dBm) 20 18 16 14 0.4 0.3 12 0.2 10 0.1 8 0 -5 -3 -1 1 3 5 7 9 11 13 9 15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Pout (dBm) Pin (dBm) XD1008-BD: Pout (dBm) vs. Pin (dBm) RF = 1.5 to 18 GHz, Vdd = 4 V, Idd = 160 mA XD1008-BD: Vdelta (V) vs. Pout (dBm) Freq = 1.5 to 18 GHz, Vdd = 4.0 V, Idd = 160 mA 1 26 0.9 Vdelta, Vdd V=4, Freq GHz=1.5 0.8 Vdelta, Vdd V=4, Freq GHz=6 0.7 Vdelta, Vdd V=4, Freq GHz=10 0.6 Vdelta, Vdd V=4, Freq GHz=14 0.5 Vdelta, Vdd V=4, Freq GHz=18 24 22 Vdelta (V) Pout (dBm) 20 18 16 0.4 14 0.3 12 0.2 10 0.1 8 0 -5 -3 -1 1 3 5 Pin (dBm) 7 9 11 13 15 10 11 12 13 14 15 16 17 18 19 20 21 22 Pout (dBm) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 10 Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Distributed Amplifier Measurements (cont.) XD1008-BD: P1dB (dBm) vs Freq (GHz) XD1008-BD: OIP3 (dBm) vs Freq (GHz) Pin = 2 dBm, Blue = 7V_200mA , Red = 4V_160mA 22 21 P1dB, Bias = 4V_160mA P1dB, Bias = 5V_174mA P1dB (dBm) OIP3 (dBm) 23 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 P1dB, Bias = 6V_187mA 20 P1dB, Bias = 7V_200mA P1dB, Bias = 8V_214mA 19 P1dB, Bias = 9V_227mA P1dB, Bias = 10V_240mA 18 17 0 2 4 6 16 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 18 Freq (GHz) 19 20 21 22 23 24 25 26 27 Frequency (GHz) XD1008-BD: Output Power at Vd= 7V, Id = 200mA, 26-40 GHz with Pin -10 to +9 dBm XD1008-BD: Psat (dBm) vs Freq (GHz) 27 26 Output Power (dBm) Psat, Bias = 4V_160mA 25 Psat, Bias = 5V_174mA Psat (dBm) Psat, Bias = 6V_187mA 24 Psat, Bias = 7V_200mA Psat, Bias = 8V_214mA 23 Psat, Bias = 9V_227mA Psat, Bias = 10V_240mA 22 21 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 26 28 30 32 20 34 36 38 40 Frequency (GHz) 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) XD1008-BD: Output Power and Gain vs Input Power. 26 - 40GHz, Vd = 7V, Id = 200mA XD1008-BD: Output Power vs Input Power. 26 - 40 GHz, Vd = 7V, Id = 200mA Output Power (dBm) and Gain (dB) 26 24 22 Pout (dBm) 20 18 16 14 12 10 8 -9 -7 -5 -3 -1 1 Input Power (dBm) 3 5 7 9 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 Input Power (dBm) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 10 Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD App Note [1] Biasing - The detector diode can be used to measure output power over a broad bandwidth. The detector diode is biased through the PA drain supply and the output voltage is measured at VDET with a high impedance voltage measurement device. A reference diode is also included which may be used to compensate for temperature and manufacturing process variation. The reference diode is biased through pin VDR with the same voltage as the PA drain supply and the voltage difference Vdelta = VDET – VREF is used to measure output power with temperature and manufacturing process compensation. Biasing Schematic GND VD AUX VDET VD RFOUT VREF VG3 VG2 VG4 VDR RFIN Nine Identical Stages VG1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 10 Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Layout Dimensions 0.17 0.42 0.55 0.83 1.27 7 8 1.05 4 0.68 3 0.49 2 0.24 5 6 9 0.73 10 0.43 1 11 0.0 0.0 2.35 Pin1 – RF IN Pin2 – VG2, not connected for basic application, but can be used for gain control (VG2 = 2V to -2V) Pin3 – VG3, not connected for basic application, can be used for gain peaking Pin4 – VD Aux, not connected, but can be used for capacitive bypass for operation at frequencies lower than 2 GHz Pin5 – VD – detector bias, the same as VD for the amplifier Pin6 – VDR – bias voltage for reference diode (see application note) Pin7 – VDREF – detector reference (see application note) Pin8 – VDET – detector diode (see application note) Pin9 – RFOUT Pin10 – VG4, not connected Pin11 – VG1, first gate bias typically bias at -2.5V to get -0.5V on the device. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 10 Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Bonding Diagram Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 8 of 10 Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD MTTF Graphs These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/ finite element analysis done at Mimix Broadband. The values shown here are only to be used as a guideline against the end application requirements and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of die placement are the key parts in determining overall reliability for a specific application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical sales for additional information. XD1008-BD: MTTF (hours) vs. Backside Temp (C) Vdd = 6.0 V, Idd = 187 mA XD1008-BD: Rth (C/W) vs. Backside Temp (C) Vdd = 6.0 V, Idd = 187 mA 1.0E+17 40 1.0E+16 35 1.0E+15 30 Rth 1.0E+13 25 MTTF Rth (C/W) MTTF hours 1.0E+14 1.0E+12 1.0E+11 20 1.0E+10 15 1.0E+09 10 1.0E+08 5 1.0E+07 0 1.0E+06 20 30 40 50 60 70 80 90 100 110 20 120 30 40 50 60 70 80 90 100 110 Backside Temp (C) Backside Temp C XD1008-BD: Tch_max (C) vs. Backside Temp (C) Vdd = 6.0 V, Idd = 187 mA 160 140 120 Tch_max (C) Tch_max 100 80 60 40 20 0 20 30 40 50 60 70 80 90 100 110 120 Backside Temp (C) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 9 of 10 Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 120 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280º C (Note: Gold Germanium should be avoided). The work station temperature should be 310º C +/- 10º C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Ordering Information Part Number for Ordering XD1008-BD-000V XD1008-BD-EV1 Description “V” - vacuum release gel paks XD1008 die evaluation module Note: Physical die may be labeled XD9001. Caution: ESD Sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Proper ESD procedures should be followed when handling this device. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 10 of 10 Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.