13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept 100% On-Wafer DC, RF and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XP1057-BD General Description Mimix Broadband’s three stage 13.5-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 17.0 dB with +48.0 dBm output third order intercept. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Military, Space, Microwave Point-to-Point Radio, SATCOM and VSAT applications. Absolute Maximum Ratings1 Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)1 +8.0 VDC 600,1400,3000 mA +0.3 VDC +33.0 dBm -65 to +165 ºC -55 to +85 ºC 175 ºC (1) Channel temperature affects a device’s MTTF. It is recommended to keep channel temperature as low as possible for maximum life Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f) Units GHz Min 13.5 Typ - Max 16.0 Input Return Loss (S11) dB - 10.0 - Output Return Loss (S22) dB - 10.0 - Small Signal Gain (S21)2 dB - 17.0 - Gain Flatness (delta S21) dB - +/-1.0 - Reverse Isolation (S12) dB - 60.0 - Output Power for 1dB Compression Point (P1dB) dBm - +39.0 - Output Third Order Intermods (OIP3) dBm - +48.0 - Saturated Output Power (Psat) dBm - +40.0 - 2 Drain Bias Voltage (Vd1,2,3) VDC - +7.5 +7.8 Gate Bias Voltage (Vg1,2,3) VDC -1.5 -0.8 0.0 Supply Current (Id1) (Vd=7.5V, Vg=-0.8 V Typical) mA - 500 550 Supply Current (Id2) (Vd=7.5V, Vg=-0.8 V Typical) mA - 1000 1200 Supply Current (Id3) (Vd=7.5V, Vg=-0.8 V Typical) mA - 2200 2600 (2) Measured on wafer pulsed. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Power Amplifier Measurements (On-Wafer1) XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA Id2=499 mA, Id3=996 mA XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA Id2=499 mA, Id3=996 mA 20 30 19 20 18 10 0 -10 16 Gain (dB) Gain (dB) 17 15 14 -20 -30 -40 13 -50 12 -60 11 -70 10 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 -80 10.0 17.0 11.0 12.0 13.0 0 0 -5 -5 -10 -15 -20 -25 17.0 18.0 19.0 20.0 19.0 20.0 19.0 20.0 -15 -20 -25 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 -30 10.0 17.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Frequency (GHz) XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA Id2=499 mA, Id3=996 mA XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA Id2=499 mA, Id3=996 mA 0 0 -5 -5 Output Return Loss (dB) Output Return Loss (dB) 16.0 -10 Frequency (GHz) -10 -15 -20 -25 -30 12.0 15.0 XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA Id2=499 mA, Id3=996 mA Input Return Loss (dB) Input Return Loss (dB) XP1057-BD, Vd=4.0 V, Vg=-1.1 V, Id1=254 mA Id2=499 mA, Id3=996 mA -30 12.0 14.0 Frequency (GHz) Frequency (GHz) -10 -15 -20 -25 12.5 13.0 13.5 14.0 14.5 15.0 Frequency (GHz) 15.5 16.0 16.5 17.0 -30 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Frequency (GHz) Note [1] Measurements – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Power Amplifier Measurements (On-Wafer1) (cont.) XP1057-BD, Vd=8.0 V, Vg=Varied Pulsed into 50 + j0, Pin = +20 dBm 42 41 Output Power Psat (dBm) 40 39 38 37 Vg = -1.3 V Vg = -1.2 V Vg = -1.1 V Vg = -1.0 V Vg = -0.9 V Vg = -0.8 V Vg = -0.7 V 36 35 34 33 32 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 Note [1] Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Power Amplifier Measurements (Test Fixture1) XP1057-BD, Vd=8.0 V, Vg=-0.8 V 41.0 40.5 40.0 39.5 P1dB (dBm) Gain (dB) XP1057-BD, Vd=8.0 V, Vg=-0.8 V 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 14.00 39.0 38.5 38.0 37.5 +85C 14.25 -40C 14.50 37.0 +25C 14.75 15.00 15.25 15.50 15.75 16.00 Frequency (GHz) 36.5 +85C -40C 36.0 14.00 14.25 14.50 51 51 50 49 48 47 46 45 44 +85C -40C 15.50 15.75 16.00 +25C 49 48 47 46 45 44 43 +85C -40C 19 20 +25C 42 14.25 14.50 14.75 15.00 15.25 15.50 15.75 18 16.00 51 51 Output Third Order Intercept (dBm) 52 50 49 48 47 46 45 44 -40C 22 23 24 25 26 XP1057-BD, Vd=8.0 V, Vg=-0.8 V, Freq=15.5 GHz 52 +85C 21 Output Power per Tone (dBm) XP1057-BD, Vd=8.0 V, Vg=-0.8 V, Freq=15.0 GHz Output Third Order Intercept (dBm) 15.25 50 Frequency (GHz) 43 15.00 XP1057-BD, Vd=8.0 V, Vg=-0.8 V, Freq=14.5 GHz 52 Output Third Order Intercept (dBm) Output Third Order Intercept (dBm) XP1057-BD, Vd=8.0 V, Vg=-0.8 V, Pscl = +22 dBm 42 14.00 14.75 Frequency (GHz) 52 43 +25C +25C 50 49 48 47 46 45 44 43 +85C -40C 19 20 +25C 42 42 18 19 20 21 22 23 Output Power per Tone (dBm) 24 25 26 18 21 22 23 24 25 Output Power per Tone (dBm) Note [1] Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 26 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Power Amplifier Measurements (Test Fixture1) (cont.) 30 XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=525 mA Id2=1016 mA, Id3=2077 mA 0 -10 Reverse Isolation (dB) 25 Gain (d B) 20 15 10 5 0 10.0 XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=525 mA Id2=1016 mA, Id3=2077 mA -20 -30 -40 -50 -60 -70 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 -80 10.0 20.0 11.0 12.0 13.0 Frequency (GHz) +85 Deg C 0 -40 Deg C +25 Deg C +85 Deg C XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=525 mA Id2=1016 mA, Id3=2077 mA 17.0 18.0 19.0 20.0 -40 Dec C 19.0 20.0 +25 Deg C -5 Output Return Loss (dB) Input Return Loss (dB) 16.0 XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=525 mA Id2=1016 mA, Id3=2077 mA 0 -10 -15 -20 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 -10 -15 -20 -25 10.0 11.0 12.0 13.0 +85 Deg C -40 Deg C 14.0 15.0 16.0 17.0 18.0 Frequency (GHz) Frequency (GHz) 10 15.0 Frequency (GHz) -5 -25 10.0 14.0 +85 Deg C +25 Deg C XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=506 mA Id2=972 mA, Id3=1962 mA 25 -40 Deg C +25 Deg C XP1057-BD, Vd=Varied, Vg=-0.9 V, Id1=525 mA Id2=1016 mA, Id3=2077 mA 24 23 22 8 Gain (dB) Noise Figure (dB) 9 7 21 20 19 18 6 5 13.5 17 16 14.0 14.5 15.0 15.5 Frequency (GHz) +85 85 Deg C -40 40 Deg C 16.0 15 13.5 14.0 14.5 15.0 15.5 16.0 Frequency (GHz) +25 25 Deg C Vd=6 5 V Vd=6.5 Vd=7 0 V Vd=7.0 Vd=7 5 V Vd=7.5 Note [1] Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Power Amplifier Measurements (Test Fixture1) (cont.) XP1057-BD, Vd=Varied, Vg=-0.9 V, Id1=525 mA Id2=1016 mA, Id3=2077 mA 42 52 Output Third Order Intercept (dBm) Output Power P1dB (dBm) 41 40 39 38 37 36 35 34 33 32 13.5 14.0 14.5 15.0 15.5 XP1057-BD, Vd=Varied, Vg=-0.9 V, Id1=525 mA Id2=1016 mA, Id3=2077 mA 51 50 49 48 47 46 45 44 43 42 13.5 16.0 14.0 14.5 Frequency (GHz) Vd=6.5 V Vd=7.5 V Vd=6.5 V XP1057-BD, Vd=7.5 V, Vg=-0.9 V, Id1=503 mA Id2=971 mA, Id3=1979 mA 52 50 49 48 47 46 45 44 43 42 16.0 Vd=7.0 V Vd=7.8 V 51 50 49 48 47 46 45 44 43 42 15 16 17 18 19 20 21 22 23 24 25 15 16 17 Output Power per Tone (dBm) 13.5 GHz 14 GHz 14.5 GHz 15 GHz 18 19 20 21 22 23 24 25 Output Power per Tone (dBm) 15.5 GHz 16 GHz 13.5 GHz XP1057-BD, Vd=7.5 V, Vg=Varied, Freq=14.0 GHz 51 14 GHz 14.5 GHz 15 GHz 15.5 GHz 16 GHz XP1057-BD, Vd=7.5 V, Vg=Varied, Freq=15.5 GHz 51 50 50 Output Third Order Intercept (dBm) Output Third Order Intercept (dBm) 15.5 XP1057-BD, Vd=7.5 V, Vg=-0.8 V, Id1=596 mA Id2=1143 mA, Id3=2346 mA 52 51 Output Third Order Intercept (dBm) Output Third Order Intercept (dBm) Vd=7.0 V 15.0 Frequency (GHz) 49 48 47 46 45 44 43 42 41 49 48 47 46 45 44 43 42 41 15 16 17 18 19 20 21 22 23 24 25 15 16 17 Output Power per Tone (dBm) Vg=-0.8 Vg 0.8 V Vg=-0.9 Vg 0.9 V Vg=-1.0 Vg 1.0 V 18 19 20 21 22 23 24 Output Power per Tone (dBm) Vg=-1.1 Vg 1.1 V Vg=-0 Vg= 0.8 8V Vg=-0 Vg= 0.9 9V Vg=-1 Vg= 1.0V 0V Vg=-1 Vg= 1.1 1V Note [1] Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 25 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Power Amplifier Measurements (Test Fixture1) (cont.) XP1057-BD, Vd=Various, Vg=-0.8 V Pulsed, 1% Duty Cycle, 10us Period 44 43 43 42 42 Output Power Psat (dBm) Output Power Psat (dBm) 44 41 40 39 38 37 36 35 34 12.0 XP1057-BD, Vd=Various, Vg=-0.9 V Pulsed, 1% Duty Cycle, 10us Period 41 40 39 38 37 36 35 13.0 14.0 15.0 16.0 17.0 34 12.0 18.0 13.0 14.0 Frequency (GHz) Vd=7.5 V Vd=6.5 V Vd=7.5 V XP1057-BD, Vd=Various, Vg=-1.0 V Pulsed, 1% Duty Cycle, 10us Period 44 43 43 42 42 Output Power Psat (dBm) Output Power Psat (dBm) 44 Vd=7.0 V 41 40 39 38 37 36 16.0 17.0 18.0 Vd=7.0 V 17.0 18.0 Vd=6.5 V XP1057-BD, Vd=Various, Vg=-1.1 V Pulsed, 1% Duty Cycle, 10us Period 41 40 39 38 37 36 35 35 34 12 0 12.0 15.0 Frequency (GHz) 13 0 13.0 14 0 14.0 15 0 15.0 16 0 16.0 Frequency (GHz) Vd=7.5 V Vd=7.0 V 17 0 17.0 18 0 18.0 34 12.0 13.0 14.0 15.0 16.0 Frequency (GHz) Vd=6.5 V Vd=7.5 V Vd=7.0 V Vd=6.5 V Note [1] Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 S-Parameters (On Wafer1) Typcial S-Parameter Data for XP1057-BD Vd=4.0 V, Id=1749 mA Frequency (GHz) 50 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20 0 20.0 21.0 22.0 23.0 24.0 25.0 S11 (Mag) 0 992 0.992 0.988 0.976 0.944 0.894 0.843 0.773 0.686 0.541 0.348 0.192 0.087 0.239 0.546 0.745 0 837 0.837 0.902 0.937 0.949 0.958 0.960 S11 (Ang) -40.27 40 27 -50.49 -60.41 -73.40 -87.81 -102.23 -123.83 -156.25 144.91 70.54 -13.07 -93.59 138.27 76.07 40.63 19 86 19.86 2.29 -11.51 -20.97 -30.12 -37.83 S21 (Mag) 0 0008 0.0008 0.0010 0.0007 0.0106 0.0482 0.1435 0.5190 2.1836 6.8904 8.1647 7.5603 6.8651 3.8400 1.4023 0.4331 0 0737 0.0737 0.0072 0.0005 0.0010 0.0004 0.0011 S21 (Ang) 124 14 124.14 66.91 131.92 87.77 6.92 -67.68 -161.88 82.30 -84.39 128.89 -25.56 175.08 25.35 -127.09 67.28 -63.45 63 45 -174.91 -20.05 -133.34 -160.56 -106.26 S12 (Mag) 0 0001 0.0001 0.0002 0.0000 0.0004 0.0003 0.0004 0.0006 0.0010 0.0012 0.0009 0.0014 0.0014 0.0012 0.0003 0.0011 0 0007 0.0007 0.0012 0.0003 0.0006 0.0011 0.0008 S12 (Ang) 73 89 73.89 33.69 -56.31 -45.78 -28.82 -39.97 -131.21 159.82 82.87 -34.08 108.93 11.03 -147.41 -71.14 -71.77 -66.43 66 43 115.62 -174.48 3.68 -29.40 -66.96 S22 (Mag) 0 985 0.985 0.978 0.971 0.960 0.944 0.924 0.882 0.756 0.361 0.125 0.246 0.253 0.173 0.452 0.672 0 742 0.742 0.799 0.849 0.877 0.900 0.910 S22 (Ang) -60.95 60 95 -74.17 -85.85 -100.14 -115.59 -130.56 -151.88 177.08 145.65 148.78 -149.30 140.75 -48.93 -131.12 166.76 104 73 104.73 37.61 -13.71 -44.53 -70.50 -89.86 Note [1] S-Parameters – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 8 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Mechanical Drawing 0.128 (0.005) 0.712 (0.028) 1.370 (0.054) 2 3 4 4.200 (0.165) 2.099 (0.083) 2.155 2.424 (0.085) (0.095) 5 3.223 (0.127) 6 7 8 1 2.099 (0.083) XP1057-BD 14 0.0 12 13 0.0 0.128 0.712 (0.005) (0.028) 1.370 (0.054) 11 10 2.155 2.424 (0.085) (0.095) 9 3.223 (0.127) 4.000 (0.157) (Note: Engineering designator is 15MPA1040) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.075 +/- 0.010 (0.0033 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Most DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF and Vd1,3 Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 10.416 mg. Bond Pad #1 (RF In) Bond Pad #5 (Vd2A) Bond Pad #9 (Vd3B) Bond Pad #13 (Vd1B) Bond Pad #2 (Vg1A) Bond Pad #6 (Vg3A) Bond Pad #10 (Vg3B) Bond Pad #14 (Vg1B) Bond Pad #3 (Vd1A) Bond Pad #7 (Vd3A) Bond Pad #11 Vd2B) Bond Pad #4 (Vg2A) Bond Pad #8 (RF Out) Bond Pad #12 (Vg2B) Bias Arrangement (See App Notes [1], [2] and [3]) Vg2 Vg1a 2 RF In 3 5 4 Vg3 6 Vd3 7 8 1 RF Out XP1057-BD 14 12 13 Vd1 11 Vd2 10 9 Vg3 Vd3 Layout for reference only – It is recommended to bias output stage from both sides. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 9 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3)=7.5V with Id1=500mA, Id2=1000mA and Id3=2200mA. Separate biasing is recommended if the amplifier is to be used in a linear application or at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current Id(total)=3700mA. [Linear Applications] - For applications where the amplifier is being used in linear operation, where best IM3 (Third-Order Intermod) performance is required at more than 5dB below P1dB, it is also recommended to use active gate biasing to keep the drain currents constant as the RF power and temperature vary; this gives the best performance and most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate voltage of the pHEMT is controlled to maintain correct drain current compensating for changes over temperature. [Saturated Applications] - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and each amplifier stage is best operated at a constant gate voltage. Significant gate currents will flow at saturation and bias circuitry must allow for drain current growth under this condition to achieve best RF output power and power added efficiency. Additionally, if the input RF power level will vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes significant. Note under this bias condition, gain will then vary with RF drive. NOTE! - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance. CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vg1,2,3) is available before applying the positive drain supply (Vd1,2,3). Additionally, it is recommended that the device gates are protected with Silicon diodes to limit the applied voltage. App Note [2] Bias Arrangement [For Individual Stage Bias] (recommended for linear/saturated applications) - Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance (100-200 pF) as close to the device as possible. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended. All DC pads have been tied together on chip and device can be biased from either side. [For Parallel Stage Bias] (general applications) - The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (100-200 pF) are tied together at one point after bypass capacitance. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side. NOTE! In either arrangement, for most stable performance all unused DC pads must also be bypassed with at least 100-200 pf capacitance. App Note [3] Material Stack-Up – In addition to the practical aspects of bias and bias arrangement, device base material stack-up also must be considered for best thermal performance. A well thought out thermal path solution will improve overall device reliability, RF performance and power added efficiency. The photo shows a typical high power amplifier carrier assembly. The material stack-up for this carrier is shown below. This stack-up is highly recommended for most reliable performance however, other materials (i.e. eutectic solder vs epoxy, copper tungsten/copper moly rib, etc.) can be considered/possibly used but only after careful review of material thermal properties, material availability and end application performance requirements. MMIC, 3mil Alumina Substrate Diemat DM6030HK Epoxy, ~1mil AuSn Eutectic Solder MOLY Rib, 5mil, Au plated MOLY Carrier, 25mil Au plated Copper Block Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 10 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 MTTF Graphs These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/ finite element analysis done at Mimix Broadband. The values shown here are only to be used as a guideline against the end application requirements and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of die placement are the key parts in determining overall reliability for a specific application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical sales for additional information. 1.0E+08 1.00E+07 1.0E+07 1.00E+06 1.0E+06 1.00E+05 FITS MTTF (hours) XP1057-BD Vd=7.5 V, Id1=500 mA Id2=1000 mA, Id3=2200 mA 1.0E+05 1.00E+04 1.0E+04 1.00E+03 1.0E+03 1.00E+02 1.0E+02 55.0 65.0 75.0 85.0 95.0 105.0 115.0 125.0 XP1057-BD Vd=7.5 V, Id1=500 mA Id2=1000 mA, Id3=2200 mA 1.00E+01 55.0 65.0 75.0 Backplate Temperature (deg C) XP1057-BD Vd=7.5 V, Id1=500 mA Id2=1000 mA, Id3=2200 mA 200 2.8 190 2.7 180 2.6 2.5 2.4 130 2.1 120 85.0 95.0 105.0 Backplate Temperature (deg C) 125.0 115.0 125.0 150 140 75.0 115.0 160 2.2 65.0 105.0 170 2.3 2.0 55.0 95.0 XP1057-BD Vd=7.5 V, Id1=500 mA Id2=1000 mA, Id3=2200 mA 210 2.9 Tch (deg C) Rth (deg C/W) 3.0 85.0 Backplate Temperature (deg C) 115.0 125.0 110 55.0 65.0 75.0 85.0 95.0 105.0 Backplate Temperature (deg C) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 11 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.075 mm (0.003") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxy is Die Mat DM6030HK or an epoxy with >52 W/m ºK thermal conductivity cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Ordering Information Part Number for Ordering XP1057-BD-000V XP1057-BD-EV1 Description RoHS compliant die packed in vacuum release gel packs XP1057-BD evaluation module Caution: ESD Sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Proper ESD procedures should be followed when handling this device. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 12 of 12 Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.