MINI GVA-81+

5 Volt-Surface Mount
Monolithic Amplifier
DC-7 GHz
Product Features
• Gain,10 dB typ. at 100 MHz
• High Pout, P1dB 19.1 dBm typ.
• High IP3, 42 dBm typ. at 100 MHz
• Ruggedized design
• Fixed 5V operation
• Unconditionally stable
• Excellent ESD Protection
• Transient protected, US patent 6,943,629
GVA-81+
CASE STYLE: DF782
PRICE: $1.82 ea. QTY. (25)
+ RoHS compliant in accordance
with EU Directive (2002/95/EC)
Typical Applications
The +Suffix has been added in order to identify RoHS
Compliance. See our web site for RoHS Compliance
methodologies and qualifications.
• Base station infrastructure
• Portable Wireless
• CATV & DBS
• MMDS & Wireless LAN
• LTE
General Description
GVA-81+ (RoHS compliant) is a wideband amplifier offering high dynamic range. Lead finish is SnAgNi.
It has repeatable performance from lot to lot and is enclosed in a SOT-89 package. It uses patented
Transient Protected Darlington configuration and is fabricated using InGaP HBT technology.
simplified schematic and pin description
RF-OUT and DC-IN
3 R F -OUT & DC-IN
RF IN
4
2 G R OUND
1 R F -IN
GROUND
Function
Pin Number
Description
RF IN
1
RF input pin. This pin requires the use of an external DC blocking capacitor chosen
for the frequency of operation.
RF-OUT and DC-IN
3
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking
capacitor is necessary for proper operation. An RF choke is needed to feed DC bias
without loss of RF signal due to the bias connection, as shown in “Recommended
Application Circuit”, Fig. 2
GND
2,4
Connections to ground. Use via holes as shown in “Suggested Layout for PCB
Design” to reduce ground path inductance for best performance.
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®
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ISO 9001 ISO 14001 AS 9100 CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
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IF/RF MICROWAVE COMPONENTS
REV. OR
M122194
GVA-81+
ED-12353/2
090327
Page 1 of 5
GVA-81+
Monolithic InGaP HBT MMIC Amplifier
Electrical Specifications(1) at 25°C and 5V, unless noted
Parameter
Condition
(GHz)
Frequency Range(2)
Gain
Magnitude of Gain Variation versus Temperature (3)
(values are negative)
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power @1 dB compression
Output IP3
Noise Figure
Group Delay
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
Min.
DC
9.5
8.8
7.5
Typ.
10.5
10.5
10.0
9.3
8.7
8.1
7.6
0.0005
0.0010
0.0016
0.0020
0.0025
0.0036
7.0
0.0063
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
38.0
27.0
20.1
17.4
16.9
18.5
14.3
21.4
20.6
17.4
14.5
13.1
14.8
14.0
12.0
7.0
13.2
2.0
0.1
1.0
2.0
3.0
4.0
6.0
20.8
19.1
19.1
19.7
19.7
19.4
17.7
17.5
17.5
17.5
7.0
17.7
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
42.0
38.3
36.6
35.0
33.2
31.1
31.1
7.3
7.3
7.4
7.6
7.7
8.3
8.9
32.0
2.0
Max.
Units
7
11.5
GHz
dB
11.0
10.0
dB/°C
0.005
dB
dB
dB
dBm
dBm
8.6
dB
9.0
98
psec
Device Operating Voltage
4.8
5.0
5.2
V
Device Operating Current
93
103
112
mA
Device Current Variation vs. Temperature
Device Current Variation vs. Voltage
Thermal Resistance, junction-to-ground lead
62
µA/°C
0.036
mA/mV
65
°C/W
(1)
Measured on Mini-Circuits test board TB-313. See Characterization Test Circuit (Fig. 1)
(2)
Guaranteed specification DC*-7 GHz. *Low frequency cut off determined by external coupling capacitors and RF Choke (RFC).
(3)
(Gain at 85°C - Gain at -45°C)/130
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®
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ISO 9001 ISO 14001 AS 9100 CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
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IF/RF MICROWAVE COMPONENTS
Page 2 of 5
GVA-81+
Monolithic InGaP HBT MMIC Amplifier
Absolute Maximum Ratings
Parameter
Ratings
Operating Temperature (ground lead)
-40°C to 85°C
Storage Temperature
-65°C to 150°C
Operating Current at 5V
160mA
Power Dissipation
1.0W
Input Power
20 dBm
DC Voltage on Pin 3
5.8V
Note:
Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
Characterization Test Circuit
Vcc (Supply voltage)
+5V
3
1
RF-IN
BLK-18+
2,4
DUT
TB-313
RF-OUT
Bias-Tee
ZX85-12G-S+
Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-313)
Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24.
Noise Figure measured using Agilent’s N5242A PNA-X microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
Mini-Circuits
®
minicircuits.com
ISO 9001 ISO 14001 AS 9100 CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
TM
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IF/RF MICROWAVE COMPONENTS
Page 3 of 5
GVA-81+
Monolithic InGaP HBT MMIC Amplifier
Product Marking
V81
Additional Detailed Technical Information
Additional information is available on our web site. To access this information enter the model number on
our web site home page.
Performance data, graphs, s-parameter (S2P FILES) data set (.zip file)
Case Style: DF782 (SOT 89)
Plastic package, exposed paddle, lead finish: tin/silver/nickel
Tape & Reel: F55
Suggested Layout for PCB Design: PL-255
Evaluation Board: TB-410-81+
Environmental Ratings: ENV08T1
Recommended Application Circuit
V cc
C bypas s
C block
IN
4
Ibias
R FC
3
Vd
1
2
OUT
C block
Fig 2. Test Board includes case, connectors, and components soldered to PCB
Mini-Circuits
®
minicircuits.com
ISO 9001 ISO 14001 AS 9100 CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
TM
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IF/RF MICROWAVE COMPONENTS
Page 4 of 5
GVA-81+
Monolithic InGaP HBT MMIC Amplifier
ESD Rating
Human Body Model (HBM): Class 1C (1000v to < 2000v) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M2 (100V to < 200V) in accordance with ANSI/ESD STM 5.2 - 1999
MSL Rating
Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020D
MSL Test Flow Chart
Start
Visual
Inspection
Electrical Test
SAM Analysis
Reflow 3 cycles,
260°C
Soak
85°C/85RH
168 hours
Bake at 125°C,
24 hours
Visual
Inspection
Electrical Test
SAM Analysis
Mini-Circuits
®
minicircuits.com
ISO 9001 ISO 14001 AS 9100 CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
TM
The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com
IF/RF MICROWAVE COMPONENTS
Page 5 of 5