APTGF90A60T1G Phase leg NPT IGBT Power Module 5 6 Q1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 11 CR1 7 8 3 4 Q2 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration NTC CR2 9 10 1 2 VCES = 600V IC = 90A @ Tc = 80°C 12 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Tc = 25°C Max ratings 600 110 90 315 ±20 416 Tj = 150°C 200A @ 600V Tc = 25°C Tc = 80°C Tc = 25°C Reverse Bias Safe Operating Area Unit V A August, 2007 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGF90A60T1G – Rev 0 Symbol VCES APTGF90A60T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 90A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 2.0 2.2 3 Max 250 500 2.5 Unit 5 ±150 V nA Max Unit µA V Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time VGE = 15V VBus = 300V IC = 90A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 90A Tj = 125°C RG = 5 Ω Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Typ 4300 470 400 330 290 200 26 25 150 pF nC ns 30 26 25 ns 170 40 4.3 mJ 3.5 Reverse diode ratings and characteristics IRM IF VF Min VR=600V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ IF = 60A VR = 400V di/dt =400A/µs www.microsemi.com V Tj = 25°C Tj = 125°C Tc = 80°C IF = 60A IF = 120A IF = 60A Unit 35 600 Tj = 125°C 60 1.8 2.2 1.5 Tj = 25°C 25 Tj = 125°C Tj = 25°C 160 70 Tj = 125°C 960 µA A 2.2 August, 2007 VRRM Test Conditions V ns nC 2–6 APTGF90A60T1G – Rev 0 Symbol Characteristic APTGF90A60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.3 0.65 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGF90A60T1G – Rev 0 August, 2007 SP1 Package outline (dimensions in mm) APTGF90A60T1G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 250 250µs Pulse Test < 0.5% Duty cycle 200 Ic, Collector Current (A) TJ=25°C 150 TJ=125°C 100 50 250µs Pulse Test < 0.5% Duty cycle 200 TJ=25°C 150 100 TJ=125°C 50 0 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 0 4 1 Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 150 100 50 TJ=125°C TJ=25°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=180A 5 4 3 Ic=90A 2 Ic=45A 1 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) 14 VCE=300V 12 10 VCE=480V 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) 300 350 On state Voltage vs Junction Temperature 4 3.5 Ic=180A 3 2.5 Ic=90A 2 Ic=45A 1.5 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 16 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 120 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) VCE=120V IC = 90A TJ = 25°C 16 10 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) 0 4 1.10 1.00 0.90 0.80 25 50 75 100 125 TJ, Junction Temperature (°C) 100 80 August, 2007 200 3 Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250 2 VCE, Collector to Emitter Voltage (V) 60 40 20 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–6 APTGF90A60T1G – Rev 0 Ic, Collector Current (A) 250 APTGF90A60T1G Turn-Off Delay Time vs Collector Current VGE = 15V 30 25 Tj = 25°C VCE = 400V RG = 5Ω 20 15 25 50 75 100 125 150 td(off), Turn-Off Delay Time (ns) 250 VGE=15V, TJ=125°C 200 150 100 50 25 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 100 125 150 VCE = 400V, VGE = 15V, RG = 5Ω VGE=15V, TJ=125°C tf, Fall Time (ns) 40 20 60 TJ = 125°C 40 20 TJ = 25°C 0 50 75 100 125 ICE, Collector to Emitter Current (A) 150 25 Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 8 VCE = 400V RG = 5Ω 6 TJ=125°C, VGE=15V 4 TJ=25°C, VGE=15V 2 0 0 25 50 75 100 125 6 VCE = 400V VGE = 15V RG = 5Ω 5 4 TJ = 25°C 2 1 0 0 25 Eoff, 90A Eoff, 45A 4 Eon, 45A 0 10 20 30 40 75 100 125 150 Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ) Eoff, 180A Eon, 90A 0 50 ICE, Collector to Emitter Current (A) Eon, 180A 8 TJ = 125°C 3 150 Switching Energy Losses vs Gate Resistance 16 12 150 Turn-Off Energy Loss vs Collector Current ICE, Collector to Emitter Current (A) VCE = 400V VGE = 15V TJ= 125°C 50 75 100 125 ICE, Collector to Emitter Current (A) 50 Gate Resistance (Ohms) 10 VCE = 400V VGE = 15V RG = 5Ω 8 Eon, 180A Eoff, 180A 6 August, 2007 tr, Rise Time (ns) VCE = 400V RG = 5Ω 25 Eon, Turn-On Energy Loss (mJ) 75 Current Fall Time vs Collector Current 80 0 Switching Energy Losses (mJ) 50 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, TJ=25°C VCE = 400V RG = 5Ω Eon, 90A 4 Eoff, 90A 2 Eoff, 45A Eon, 45A 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTGF90A60T1G – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGF90A60T1G Capacitance vs Collector to Emitter Voltage Reverse Bias Safe Operating Area 10000 250 IC, Collector Current (A) C, Capacitance (pF) Cies 1000 Coes Cres 100 200 150 100 50 0 0 10 20 30 40 50 0 VCE, Collector to Emitter Voltage (V) 200 400 600 800 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.7 0.2 0.15 0.1 0.5 0.3 0.1 0.05 0 0.00001 0.05 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Fmax, Operating Frequency (kHz) Thermal Impedance (°C/W) 0.35 200 1 10 Operating Frequency vs Collector Current ZVS 160 120 ZCS VCE = 400V D = 50% RG = 5Ω TJ = 125°C TC = 75°C 80 40 Hard switching 0 40 60 80 100 IC, Collector Current (A) 120 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTGF90A60T1G – Rev 0 August, 2007 20