APTGT300SK170D3G Buck Chopper Trench + Field Stop IGBT Power Module VCES = 1700V IC = 300A @ Tc = 80°C Application Q1 3 • • 4 5 AC and DC motor control Switched Mode Power Supplies Features 1 • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive High level of integration M6 power connectors 2 • • • Benefits • • • • • • Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 600A@1650V TC = 25°C TC = 80°C TC = 25°C Unit V September, 2008 IC Max ratings 1700 400 300 600 ±20 1470 RBSOA Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300SK170D3G – Rev 1 Symbol VCES APTGT300SK170D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 12 mA VGE = 20V, VCE = 0V 5.2 Typ 2.0 2.4 5.8 Max Unit 3 2.5 mA 6.4 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn On Energy Eoff Turn Off Energy Isc Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=±15V, IC=300A VCE=900V Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 300A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 300A RG = 4.7Ω VGE = ±15V Tj = 25°C VBus = 900V Tj = 125°C IC = 300A Tj = 25°C RG = 4.7Ω Tj = 125°C VGE ≤15V ; VBus = 1000V tp ≤ 10µs ; Tj = 125°C Min Test Conditions Min Typ 27 0.9 nF 3.5 µC 280 80 850 ns 120 300 100 1000 ns 200 71 105 64 94 mJ 1200 A Reverse diode ratings and characteristics Maximum Peak Repetitive Reverse Voltage IRRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy Max 1700 VR=1700V IF = 300A IF = 300A VR = 900V di/dt =3500A/µs V Tj = 25°C 750 Tj = 125°C 1000 Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 300 1.8 1.9 385 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 490 76 124 35 70 www.microsemi.com Unit µA A 2.2 V September, 2008 VRRM Typ ns µC mJ 2-5 APTGT300SK170D3G – Rev 1 Symbol Characteristic APTGT300SK170D3G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight For terminals To Heatsink M6 M6 3500 -40 -40 -40 3 3 Typ Max 0.085 0.13 Unit °C/W V 150 125 125 5 5 350 °C N.m g D3 Package outline (dimensions in mm) 1° A www.microsemi.com 3-5 APTGT300SK170D3G – Rev 1 September, 2008 DÉTAIL A APTGT300SK170D3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 600 600 TJ = 125°C 500 TJ=25°C VGE=20V 450 IC (A) IC (A) 400 TJ=125°C 300 VGE=13V 300 VGE=15V 200 150 VGE=9V 100 0 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 0 TJ=25°C VCE = 900V VGE = 15V RG = 4.7Ω TJ = 125°C 225 E (mJ) 400 4 TJ=125°C 300 Eon Eoff 150 75 TJ=125°C Err 100 0 0 5 6 7 8 9 10 0 11 100 Switching Energy Losses vs Gate Resistance 400 500 600 700 VCE = 900V VGE =15V IC = 300A TJ = 125°C 600 Eon 500 IC (A) E (mJ) 300 Reverse Bias Safe Operating Area 400 300 200 IC (A) VGE (V) 200 Eoff 400 300 VGE=15V TJ=125°C RG=4.7Ω 200 100 100 Err 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 0.07 0.06 0.05 400 800 1200 1600 2000 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.09 0.08 0 35 IGBT 0.9 September, 2008 0 Thermal Impedance (°C/W) 5 0.7 0.5 0.04 0.03 0.3 0.02 0.01 0 0.00001 0.1 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT300SK170D3G – Rev 1 IC (A) 3 VCE (V) 300 500 200 2 Energy losses vs Collector Current Transfert Characteristics 600 1 APTGT300SK170D3G Forward Characteristic of diode 600 VCE=900V D=50% RG=4.7 Ω TJ=125°C TC=75°C ZVS 15 ZCS 10 500 TJ=25°C 400 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 20 TJ=125°C 300 200 5 hard switching TJ=125°C 100 0 0 0 100 200 300 0 400 0.5 IC (A) 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.14 0.12 0.9 0.1 0.7 0.08 Diode 0.5 0.06 0.04 0.02 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT300SK170D3G – Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein September, 2008 rectangular Pulse Duration (Seconds)