MICROSEMI MS2211

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2211
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
•
•
•
•
•
•
•
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REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 6.0 W MIN. WITH 9.3 dB Gain
DESCRIPTION:
The MS2211 is designed for specialized avionics applications,
including JTIDS, where power is provided under pulse formats
utilizing short pulse widths and high burst or overall duty cycles.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation *
(TC ≤ 75°°C)
Device Current *
Collector - Supply Voltage *
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Value
Unit
25
0.9
32
250
- 65 to + 200
W
A
V
°C
°C
7.0
° C/W
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance *
* Applies only to rated RF amplifier operation
MSC0919.PDF 9-23-98
MS2211
ELECTRICAL SPECIFICATIONS (Tcase
(Tcase = 25°
25° C)
STATIC
Symbol
BVCBO
BVEBO
BVCER
ICES
hFE
Test Conditions
IC =
1 mA
IE =
1 mA
IC =
5 mA
VBE =
0V
VCE =
5V
IE = 0 mA
IC = 0 mA
RBE =10Ω
VCE = 28 V
IC = 250 mA
Min.
Value
Typ.
Max.
Unit
48
3.5
48
---30
----------------
---------0.5
300
V
V
V
mA
----
Min.
Value
Typ.
Max.
Unit
6.0
45
9.3
----------
----------
W
%
dB
DYNAMIC
Symbol
POUT
VC
GP
Note:
Test Conditions
f = 960 - 1215 MHz
f = 960 - 1215 MHz
f = 960 - 1215 MHz
PIN = 0.7 W
PIN = 0.7 W
PIN = 0.7 W
VCC = 28 V
VCC = 28 V
VCC = 28 V
Pulse format: 6.4 µ s on 6.6 µ s off, repeat for 3.3 ms, then off for 4.5125 ms.
Duty Cycle: Burst 49.2%, Overall 20.8%
MSC0919.PDF 9-23-98
MS2211
PACKAGE MECHANICAL DATA
MSC0919.PDF 9-23-98