APTGT200A120D3G Phase leg Trench + Field Stop IGBT Power Module Q1 3 4 5 Q2 1 6 7 2 VCES = 1200V IC = 200A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 400A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A September, 2008 IC Max ratings 1200 300 200 400 ±20 1050 RBSOA Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT200A120D3G – Rev 1 Symbol VCES APTGT200A120D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 8mA VGE = 20V, VCE = 0V 1.4 5.0 Typ 1.7 2.0 5.8 Max Unit 500 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Crss Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Test Conditions VGE = 0V,VCE = 25V f = 1MHz VGE=±15V, IC=200A VCE=600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 3.6Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 3.6Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C RG = 3.6Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Min Test Conditions Min 1200 Typ 14 0.6 nF 1.9 µC 250 90 550 ns 130 300 100 650 ns 180 15 mJ 35 800 A Reverse diode ratings and characteristics IF Maximum Reverse Leakage Current VR=1200V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =3500A/µs Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 200 1.6 1.6 170 Tj = 125°C 280 Tj = 25°C 22 Tj = 125°C 40 Tj = 25°C 9 Tj = 125°C 16 www.microsemi.com Max 750 1000 Unit V µA A 2.1 V September, 2008 IRRM Typ ns µC mJ 2-5 APTGT200A120D3G – Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT200A120D3G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight For terminals To Heatsink M6 M6 2500 -40 -40 -40 3 3 Typ Max 0.12 0.20 Unit °C/W V 150 125 125 5 5 350 °C N.m g D3 Package outline (dimensions in mm) 1° A www.microsemi.com 3-5 APTGT200A120D3G – Rev 1 September, 2008 DÉTAIL A APTGT200A120D3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 400 400 TJ = 125°C TJ=25°C VGE=17V 300 TJ=125°C IC (A) IC (A) 300 200 100 VGE=15V 200 VGE=9V 100 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 VCE (V) VCE (V) 75 VCE = 600V VGE = 15V RG = 3.6 Ω TJ = 125°C TJ=25°C 60 E (mJ) IC (A) 300 200 100 3 3.5 4 Energy losses vs Collector Current Transfert Characteristics 400 TJ=125°C 45 Eoff Eon 30 Err 15 0 0 5 6 7 8 9 10 11 0 12 100 Switching Energy Losses vs Gate Resistance 70 50 40 300 400 Reverse Bias Safe Operating Area 500 VCE = 600V VGE =15V IC = 200A TJ = 125°C 60 200 IC (A) VGE (V) Eon 400 Eoff IC (A) E (mJ) VGE=13V 30 300 200 VGE=15V TJ=125°C RG=3.6 Ω 20 100 Err 10 0 0 0 4 8 12 16 20 Gate Resistance (ohms) 0 24 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.08 0.06 0.04 0.02 IGBT 0.9 September, 2008 0.12 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 4-5 APTGT200A120D3G – Rev 1 Thermal Impedance (°C/W) 0.14 APTGT200A120D3G Forward Characteristic of diode 400 VCE=600V D=50% RG=3.6 Ω TJ=125°C TC=75°C 40 ZCS 30 20 TJ=25°C 300 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 50 ZVS 100 Hard Switching 10 200 TJ=125°C 0 0 0 40 80 120 160 IC (A) 200 240 0 280 0.4 0.8 1.2 VF (V) 1.6 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.25 Diode 0.2 0.9 0.15 0.7 0.1 0.5 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT200A120D3G – Rev 1 September, 2008 rectangular Pulse Duration (Seconds)