MICROSEMI 1N6100

SG6100/SG6511
SG6101/SG6510
DIODE ARRAY CIRCUITS
DESCRIPTION
FEATURES
The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic,
high breakdown, fast switching speed diode arrays. The SG6100/SG6511
is configured with 7 straight through diodes, while the SG6101/SG6510 has
8 straight through diodes.
•
•
•
•
These two diode array configurations allow the designer maximum flexibility
for circuit design and board layout. Since each diode within the array has
individual anode and cathode connections the device may be used in a
variety of applications. Also, due to the array's monolithic construction the
diode electrical parameters are very closely matched.
HIGH RELIABILITY FEATURES
Both devices are available in ceramic DIP and flatpack and can be processed
to Linfinity's S level, JANTXV, JANTX, or JAN equivalent flows.
75V minimum breakdown voltage
100mA current capability per diode
Switching speeds less than 5ns
Low leakage current < 25nA
♦ MIL-S-19500/474 QPL - 1N6100
- 1N6101
- 1N6510
- 1N6511
♦ Equivalent JANS, JANTXV, JANTX, JAN
screening available
CIRCUIT DIAGRAMS
7 - STRAIGHT THROUGH DIODES
SG6100/SG6511
8 - STRAIGHT THROUGH DIODES
SG6101/SG6510
LINFINITY
6/91 Rev 1.1 2/94
Copyright  1994
1
Microelectronics Inc.
11861 Western Avenue ∞ Garden Grove, CA 92841
(714) 898-8121 ∞ FAX: (714) 893-2570
DIODE ARRAY SERIES
ABSOLUTE MAXIMUM RATINGS
(Note 1 & 2)
Breakdown Voltage (VBR) .................................................... 75V
Output Current (IO), TC = 25°C
Continuous ................................................................. 300mA
Operating Junction Temperature
Hermetic (J, F Packages) ............................................ 150°C
Storage Temperature Range ............................ -65°C to 200°C
Lead Temperature (Soldering, 10 seconds) .................. 300°C
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
THERMAL DATA
J Package (14 & 16 Pin):
Thermal Resistance-Junction to Case , θ JC .................. 30°C/W
Thermal Resistance-Junction to Ambient, θ JA .............. 80°C/W
F Package (14 Pin):
Thermal Resistance-Junction to Case , θ JC .................. 80°C/W
Thermal Resistance-Junction to Ambient, θ JA ........... 140°C/W
F Package (16 Pin):
Thermal Resistance-Junction to Case , θ JC .................. 70°C/W
Thermal Resistance-Junction to Ambient, θ JA ........... 115°C/W
RECOMMENDED OPERATING CONDITIONS
Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).
Note B. The above numbers for θ JC are maximums for the limiting
thermal resistance of the package in a standard mounting configuration. The θ JA numbers are meant to be
guidelines for the thermal performance of the device/pcboard system. All of the above assume no ambient
airflow.
(Note 3)
Operating Ambient Temperature Range
SG6100 .......................................................... -55°C to 150°C
SG6101 .......................................................... -55°C to 150°C
SG6511 .......................................................... -55°C to 150°C
SG6510 .......................................................... -55°C to 150°C
Note 3. Range over which the device is functional.
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating ambient temperature of TA = 25°C for each diode. Low duty cycle pulse testing
techniques are used which maintains junction and case temperatures equal to the ambient temperature.)
Parameter
Breakdown Voltage (VBR )
Forward Voltage (VF)
Reverse Current (IR)
Capacitance (C) (Note 4)
Forward Recovery Time (tfr)
(Note 4)
Reverse Recovery Time (trr)
(Note 4)
Test Conditions
IR = 5µA, Duty Cycle < 20%
Duty Cycle ≤ 2%, 300 µs pulse
IF = 100mA
IF = 10mA, TA = -55°C
VR = 20V
VR = 40V
VR = 40V, TA = 150°C
VR = 0V, f = 1MHz, Pin-to-pin
SG6100/SG6511
SG6010/SG6510
Min. Typ. Max.
75
Units
V
1.0
1.0
25
100
50
4
V
V
nA
nA
µA
pf
IF = 500mA, tr ≤ 15ns, V fr = 1.8V, RS = 50Ω
15
ns
IF = IR = 200mA, irr = 20mA, RL = 100Ω
5
ns
Note 4. The parameters, although guaranteed, are not 100% tested in production.
LINFINITY
6/91 Rev 1.1 2/94
Copyright  1994
2
Microelectronics Inc.
11861 Western Avenue ∞ Garden Grove, CA 92841
(714) 898-8121 ∞ FAX: (714) 893-2570
DIODE ARRAY SERIES
CONNECTION DIAGRAMS & ORDERING INFORMATION
Package
14-PIN CERAMIC DIP
J - PACKAGE
16-PIN CERAMIC DIP
J - PACKAGE
14-PIN CERAMIC FLATPACK
F - PACKAGE
16-PIN CERAMIC FLATPACK
F - PACKAGE
Part No.
SG6511J
(1N6511)
SG6101J
(1N6101)
SG6100F
(1N6100)
SG6510F
(1N6510)
(continued)
Ambient
Temperature Range
Connection Diagram
-55°C to 150°C
-55°C to 150°C
-55°C to 150°C
-55°C to 150°C
1
14
2
13
3
12
4
11
5
10
6
9
7
8
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
1
14
2
13
3
12
4
11
5
10
6
9
7
8
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
Note 1. Consult factory for other packages available.
2. All packages are viewed from the top.
3. Consult factory for JAN, JANTX, JANTXV product availability.
LINFINITY
6/91 Rev 1.1 2/94
Copyright  1994
3
Microelectronics Inc.
11861 Western Avenue ∞ Garden Grove, CA 92841
(714) 898-8121 ∞ FAX: (714) 893-2570