APTGT100A60TG VCES = 600V IC = 100A @ Tc = 80°C Phase leg Trench + Field Stop IGBT® Power Module VBUS NT C2 Q1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 Q2 G2 E2 0/VBU S G2 E2 VBUS 0/VBUS NT C1 OUT OUT E1 E2 NTC2 G1 G2 NTC1 Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 150 100 200 ±20 340 Tj = 150°C 200A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A June, 2006 OUT V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT100A60TG – Rev 1 E1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring APTGT100A60TG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Test Conditions VR=600V IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =2000A/µs Er 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A R G = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A R G = 3.3Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C R G = 3.3Ω Tj = 150°C Fall Time Td(on) Tr Min Reverse Recovery Energy www.microsemi.com 1.5 1.7 5.8 Typ 6100 390 190 115 45 225 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V pF ns 55 130 50 ns 300 70 0.4 0.875 2.5 3.5 Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Typ Typ mJ mJ Max 250 500 100 1.6 1.5 125 220 4.7 9.9 1.1 2.4 Unit V µA A 2 V ns µC June, 2006 Symbol Characteristic mJ 2-5 APTGT100A60TG – Rev 1 Electrical Characteristics APTGT100A60TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.44 0.77 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 °C/W V 175 125 100 4.7 160 °C N.m g ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT100A60TG – Rev 1 June, 2006 SP4 Package outline (dimensions in mm) APTGT100A60TG Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 200 200 TJ=25°C 175 150 T J=125°C 125 T J=150°C IC (A) IC (A) 150 100 75 50 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 7 175 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 6 TJ =25°C 150 5 E (mJ) 125 100 TJ=125°C 75 0.5 T J=150°C TJ =25°C 0 5 4 Er 3 6 7 Eon 8 9 10 0 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 250 VCE = 300V VGE =15V IC = 100A T J = 150°C 200 Eoff Eon 4 IF (A) E (mJ) 3.5 Eoff 1 25 6 3 2 50 8 2.5 Energy losses vs Collector Current Transfert Characteristics 200 IC (A) V GE=9V 25 T J=25°C 0 VGE =15V 100 50 0 VGE =13V 125 75 25 VGE =19V T J = 150°C 175 150 100 2 Er V GE=15V T J=150°C RG=3.3Ω 50 Eon 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 100 200 300 400 V CE (V) 500 600 700 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 IGBT 0.9 0.7 June, 2006 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT100A60TG – Rev 1 Thermal Impedance (°C/W) 0.5 APTGT100A60TG Forward Characteristic of diode 200 VCE=300V D=50% RG=3.3Ω TJ =150°C 100 ZCS 80 150 125 Tc=85°C ZVS 60 175 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 100 T J=125°C 75 40 50 Hard switching 20 TJ =150°C 25 TJ=25°C 0 0 0 25 50 75 100 125 0 150 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 Diode 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT100A60TG – Rev 1 June, 2006 Rectangular Pulse Duration in Seconds