APTGT75DA170T1G Boost chopper Trench + Field Stop IGBT® Power Module 5 6 VCES = 1700V IC = 75A @ Tc = 80°C Application 11 • • • CR1 Features 3 4 Q2 NTC • CR2 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction 12 • • • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1700 130 75 150 ±20 465 Tj = 125°C 150A @ 1600V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A August, 2007 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGT75DA170T1G – Rev 0 Symbol VCES APTGT75DA170T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 75A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 5.0 2.0 2.4 5.8 Max Unit 250 2.4 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 75A RG = 10Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 75A RG = 6.8Ω VGE = 15V Tj = 125°C VBus = 900V IC = 75A Tj = 125°C RG = 6.8Ω Typ 6800 277 220 370 40 pF ns 650 180 400 50 800 ns 300 24 mJ 23.5 Chopper diode ratings and characteristics IRM Test Conditions Min Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ Max 1700 Maximum Peak Repetitive Reverse Voltage V VR=1700V Tj = 25°C Tj = 125°C IF = 75A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 75 1.8 1.9 385 Tj = 125°C Tj = 25°C 490 19 Tj = 125°C Tj = 25°C 31 9 Tj = 125°C 17.5 IF = 75A VR = 900V di/dt =800A/µs www.microsemi.com Unit 250 500 µA A 2.2 V ns August, 2007 VRRM µC mJ 2–5 APTGT75DA170T1G – Rev 0 Symbol Characteristic APTGT75DA170T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 3500 -40 -40 -40 2.5 Max 0.27 0.5 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTGT75DA170T1G – Rev 0 August, 2007 SP1 Package outline (dimensions in mm) APTGT75DA170T1G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 150 150 VGE=20V 100 100 TJ=125°C 75 VGE=13V 75 50 50 25 25 0 VGE=15V VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 150 40 E (mJ) TJ=125°C 75 3 VCE (V) 4 5 Eon Eoff 30 Er 20 50 TJ=125°C 25 10 0 0 5 6 7 8 9 10 11 12 0 13 25 Switching Energy Losses vs Gate Resistance 100 125 150 175 VCE = 900V VGE =15V IC = 75A TJ = 125°C 150 Eon 125 30 IC (A) 40 75 Reverse Bias Safe Operating Area 60 50 50 IC (A) VGE (V) E (mJ) 2 VCE = 900V VGE = 15V RG = 6.8Ω TJ = 125°C 50 100 1 Energy losses vs Collector Current 60 TJ=25°C 125 IC (A) TJ = 125°C 125 TJ=25°C IC (A) IC (A) 125 Eoff 20 100 75 VGE=15V TJ=125°C RG=6.8Ω 50 Er 10 25 0 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35 0 40 400 800 1200 1600 2000 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 IGBT August, 2007 0.25 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–5 APTGT75DA170T1G – Rev 0 Thermal Impedance (°C/W) 0.3 APTGT75DA170T1G Forward Characteristic of diode 150 VCE=900V D=50% RG=6.8 Ω TJ=125°C TC=75°C ZVS 15 ZCS 10 125 TJ=25°C 100 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 20 75 TJ=125°C 50 5 hard switching TJ=125°C 25 0 0 0 20 40 60 IC (A) 80 100 0 120 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 Diode 0.5 0.9 0.4 0.7 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGT75DA170T1G – Rev 0 August, 2007 rectangular Pulse Duration (Seconds)