APTGT300DU120G Dual common source Fast Trench + Field Stop IGBT® Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 VCES = 1200V IC = 300A @ Tc = 80°C Q2 G1 G2 E1 E2 E C1 E C2 E1 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 420 300 600 ±20 1380 Tj = 125°C 600A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A V W July, 2006 E2 G2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300DU120G – Rev 1 G1 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration APTGT300DU120G All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 300A Tj = 125°C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy 1.4 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A R G = 1.8Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A R G = 1.8Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C R G = 1.8Ω Fall Time Tf Min Test Conditions VR=1200V IF = 300A VGE = 0V IF = 300A VR = 600V di/dt =3000A/µs www.microsemi.com Typ 1.7 2.0 5.8 Typ 21 1.2 0.9 260 30 420 Max Unit 500 2.1 µA 6.5 600 V nA Max Unit V nF ns 70 290 50 520 ns 90 30 mJ 30 Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C 300 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 280 27 54 15 27 Max 500 700 Unit V µA A 2.1 V ns µC July, 2006 Symbol Characteristic mJ 2-5 APTGT300DU120G – Rev 1 Electrical Characteristics APTGT300DU120G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.09 0.17 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT300DU120G – Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTGT300DU120G Typical Performance Curve Output Characteristics (VGE =15V) 600 V GE=17V TJ=125°C 300 VGE=15V 300 200 200 100 100 VGE =9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 600 1 50 TJ=125°C E (mJ) 300 TJ=125°C 4 Eon Eoff Er 37.5 Eon 25 200 3 VCE = 600V VGE = 15V RG = 1.8Ω TJ = 125°C 62.5 400 2 VCE (V) Energy losses vs Collector Current 75 TJ=25°C 500 12.5 100 0 0 5 6 7 8 9 V GE (V) 10 11 0 12 100 200 300 400 500 600 IC (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 70 700 VCE = 600V VGE =15V IC = 300A T J = 125°C 60 50 Eon 600 500 Eoff 40 30 IC (A) E (mJ) VGE =13V 400 400 0 IC (A) T J = 125°C 500 TJ=25°C IC (A) IC (A) 500 Output Characteristics 600 Er 400 300 20 200 10 100 0 VGE =15V T J=125°C RG=1.8 Ω 0 0 2 4 6 8 10 Gate Resistance (ohms) 12 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.9 IGBT July, 2006 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT300DU120G – Rev 1 Thermal Impedance (°C/W) 0.1 APTGT300DU120G Forward Characteristic of diode 600 VCE =600V D=50% RG=1.8Ω T J=125°C Tc=75°C 50 ZVS 40 ZCS 30 T J=25°C 500 400 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 T J=125°C 300 200 20 10 T J=125°C 100 Hard switching 0 0 0 50 0 100 150 200 250 300 350 400 IC (A) 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.2 0.16 0.12 0.9 Diode 0.7 0.5 0.08 0.04 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT300DU120G – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)