MSK MSK3015

ISO-9001 CERTIFIED BY DSCC
M.S.KENNEDY CORP.
THREE PHASE BRIDGE
MOSFET POWER MODULE
3015
4707 Dey Road Liverpool, N.Y. 13088
(315) 701-6751
FEATURES:
All N-Channel Mosfets
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
Avalanche Rated Devices
Interfaces with Most Brushless Motor Drive IC's
100 Volt, 23 Amp Full Three Phase Bridge at 25°C
DESCRIPTION:
The MSK 3015 is an all N-Channel three phase power MOSFET Bridge Circuit. Packaged in a space efficient isolated
ceramic tab power SIP that allows for direct heat sinking, the MSK 3015 can be interfaced with a wide array of brushless
motor drive IC's. The MSK 3015 uses M.S Kennedy's proven power hybrid technology to produce a cost effective high
performance circuit for use in today's sophisticated servo motor and disk drive systems.
EQUIVALENT SCHEMATIC
PIN-OUT INFORMATION
TYPICAL APPLICATIONS
Three Phase Brushless DC Motor Servo Control
Disk Drive Spindle Control
Fin Actuator Control
Az-El Antenna Control
1
2
3
4
5
6
7
8
9
10
11
1
Drain Q2, Q4, Q6
Drain Q2, Q4, Q6
Drain Q2, Q4, Q6
Gate Q2
Gate Q1
Drain Q1, Source Q2
Drain Q1, Source Q2
Drain Q1, Source Q2
Gate Q4
Gate Q3
Drain Q3, Source Q4
12
13
14
15
16
17
18
19
20
21
Drain Q3,Source Q4
Drain Q3, Source Q4
Source Q1, Q3, Q5
Source Q1, Q3, Q5
Source Q1, Q3, Q5
Gate Q6
Drain Q5, Source Q6
Drain Q5, Source Q6
Drain Q5, Source Q6
Gate Q5
Rev. - 8/01
ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)@25°C
Thermal Resistance
(Junction to Case)@125°C
○
○
VGS
○
○
○
ID
IDM
RTH-JC
RTH-JC
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
±20V MAX
23A MAX
41A MAX
TJ
TST
TC
TLD
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Single Pulse Avalanche Energy
830 mJ
Junction Temperature
+150°C MAX
Storage Temperature
-55°C to +150°C
Case Operating Temperature Range -55°C to +125°C
Lead Temperature Range
(10 Seconds)
300°C MAX
○
○
○
○
100V MAX
○
○
○
100V MAX
○
○
○
○
○
○
○
○
○
○
1.2°C/W
2.0°C/W
ELECTRICAL SPECIFICATIONS
Parameter
Test Conditions 4
Drain-Source Breakdown Voltage
VGS=0 ID=0.25mA
Drain-Source Leakage Current
VDS=100V VGS=0V
Gate-Source Leakage Current
VGS=±20V VDS=0
Gate-Source Threshold Voltage
VDS=VGS ID=250µA
Drain-Source On Resistance 2
VGS=10V ID = 23A
Drain-Source On Resistance 3
VGS=10V ID=23A
Forward Transconductance 1
VDS=25V ID=23A
1
ID = 23A
Gate-Source Charge 1
VDS=80V
Total Gate Charge
Gate-Drain Charge
Turn-On Delay Time
1
VGS = 10V
1
1
Rise Time
ID = 23A
Turn-Off Delay Time 1
Fall Time
VDD=50V
RG = 6.2Ω
RD = 1.2Ω
1
Input Capacitance 1
VGS=0V
Output Capacitance 1
Reverse Transfer Capacitance 1
VDS=25V
f=1MHz
MSK3015
Min.
100
2.0
13
-
Typ.
16
120
60
81
2800
1100
280
Max.
250
±100
4.0
0.09
0.06
140
29
68
-
-
2.5
220
1.9
330
2.9
Units
V
µA
nA
V
Ω
Ω
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
Body Diode
Forward On Voltage
1
Reverse Recovery Time 1
IS=23 A VGS=0V
IS=23 A di/dt=100A/µS
Reverse Recovery Charge 1
V
nS
µC
NOTES:
1
2
3
4
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
TA=25°C unless otherwise specified.
2
Rev. - 8/01
APPLICATION NOTES
BRIDGE DRIVE CONSIDERATIONS
It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high side
transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called "shoot-through",
and it places a momentary short across the power supply. This overly stresses the transistors and causes excessive noise as well.
See Figure 1.
Figure 1
This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate
resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are used for servo
systems such as locked antiphase PWM'ing for high bandwidth operation.
3
Rev. - 8/01
TYPICAL PERFORMANCE CURVES
4
Rev. - 8/01
MECHANICAL SPECIFICATIONS
ALL DIMENSIONS ARE ±0.010 INCHES UNLESS OTHERWISE LABELED.
ORDERING INFORMATION
Part
Number
MSK 3015
Screening Level
Industrial
M.S. Kennedy Corp.
4707 Dey Road, Liverpool, New York 13088
Phone (315) 701-6751
FAX (315) 701-6752
www.mskennedy.com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
Please visit our website for the most recent revision of this datasheet.
5
Rev. - 8/01