MICROSEMI 2N6032

TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/528
Devices
Qualified Level
2N6032
JANTX
JANTXV
2N6033
MAXIMUM RATINGS
Ratings
Symbol
2N6032
2N6033
Units
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Emitter-Base Voltage
Base Current
Total Power Dissipation
VCEO
VCBO
IC
VEBO
IB
PT
90
120
50
120
150
40
Vdc
Vdc
Adc
Vdc
Adc
W
@ TC = +250C (1)
Operating & Storage Temperature Range
Top, Tstg
7.0
10
140
-65 to +200
0
C
TO-3*
(TO-204AA)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 800 mW/0C between TC = 250C and TC = 2000C
Max.
1.25
Unit
0
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N6032
2N6033
V(BR)CEO
90
120
Vdc
2N6032
2N6033
V(BR)CER
110
140
Vdc
2N6032
2N6033
V(BR)CEX
120
150
Vdc
2N6032
2N6033
ICBO
25
25
mAdc
2N6032
2N6033
ICEX
12
10
mAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, VEB = 1.5 Vdc
Collector-Base Cutoff Current
VCB = 120 Vdc
VCB = 150 Vdc
Collector-Emitter Cutoff Current
VCE = 110 Vdc, VBE =-1.5 Vdc
VCE = 135 Vdc, VBE =-1.5 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6032, 2N6033, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
IEBO
10
mAdc
ICEO
10
mAdc
OFF CHARACTERISTICS (con’t)
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
IC = 50 Adc, VCE = 2.6 Vdc
IC = 40 Adc, VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage
IC = 50 Adc, IB = 5.0 Adc
IC = 40 Adc, IB = 4.0 Adc
Base-Emitter Saturation Voltage
IC = 50 Adc, IB = 5.0 Adc
IC = 40 Adc, IB = 4.0 Adc
10
10
50
50
2N6032
2N6033
hFE
2N6032
2N6033
VCE(sat)
1.3
1.0
Vdc
2N6032
2N6033
VBE(sat)
2.0
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
10
40
1,000
pF
on
0.5
0.5
µs
off
2.0
2.0
µs
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 50 Adc; IB = 5.0 Adc
VCC = 30 Vdc; IC = 40 Adc; IB = 4.0 Adc
Turn-Off Time
VCC = 30 Vdc±2; IC = 50 Adc; IB1 = 5 IB2 = -5 Adc
VCC = 30 Vdc±2; IC = 40 Adc; IB1 = 4 IB2 = -4 Adc
2N6032
2N6033
t
2N6032
2N6033
t
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 2.8 Vdc, IC = 50 Adc
2N6032
Test 2
VCE = 3.5 Vdc, IC = 40 Adc
2N6033
Test 3
VCE = 24 Vdc, IC = 5.8 Adc
All Types
Test 4
VCE = 40 Vdc, IC = 0.9 Adc
All Types
Test 5
VCE = 90 Vdc, IC = 0.18 Adc
2N6032
Test 6
VCE = 120 Vdc, IC = 0.1 Adc
2N6033
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2