DIODES ZXMN2A02X8TC

ZXMN2A02X8
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 20V; RDS(ON) = 0.02
ID = 7.8A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
MSOP8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN2A02X8TA
7”
12mm
1000 units
ZXMN2A02X8TC
13”
12mm
4000 units
DEVICE MARKING
Top View
• ZXMN
2A02
ISSUE 2 - JANUARY 2005
1
ZXMN2A02X8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
V GS
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
LIMIT
UNIT
20
V
20
V
ID
7.8
6.3
6.2
A
I DM
39
A
A
Continuous Source Current (Body Diode) (b)
IS
3.1
Pulsed Source Current (Body Diode) (c)
I SM
39
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
1.67
13.4
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
113
°C/W
Junction to Ambient (b)
R θJA
74.5
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph. Refer to transient thermal impedance graph.
ISSUE 2 - JANUARY 2005
2
ZXMN2A02X8
CHARACTERISTICS
Max Power Dissipation (W)
ID Drain Current (A)
1.2
RDS(on)
10 Limited
1
DC
1s
100ms
100m
10ms
10m
Single Pulse
Tamb=25°C
100m
1ms
100µs
1
10
VDS Drain-Source Voltage (V)
1.0
0.8
0.6
0.4
0.2
0.0
0
20
MaximumPower (W)
Thermal Resistance (°C/W)
D=0.05
D=0.1
10
80
100 120 140 160
Derating Curve
Single Pulse
1
60
Temperature (°C)
Safe Operating Area
120
110 Tamb=25°C
100
90
80
70 D=0.5
60
50
40
30 D=0.2
20
10
0
100µ 1m 10m 100m
40
100
Single Pulse
Tamb=25°C
100
10
1
100µ 1m
1k
10m 100m
1
10
100
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - JANUARY 2005
3
1k
ZXMN2A02X8
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
20
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
TYP.
MAX. UNIT
CONDITIONS.
STATIC
V
I D =250µA, V GS =0V
1
µA
V DS =20V, V GS =0V
100
nA
0.7
Static Drain-Source On-State Resistance R DS(on)
(1)
0.02
0.04
V
I =250µA, V DS = V GS
D
Ω
Ω
V GS =4.5V,
V GS =2.5V,
V DS =10V,I D =11A
g fs
27
S
Input Capacitance
C iss
1900
pF
Output Capacitance
C oss
356
pF
Reverse Transfer Capacitance
C rss
218
pF
Turn-On Delay Time
t d(on)
7.9
ns
Rise Time
tr
10
ns
Turn-Off Delay Time
t d(off)
33.3
ns
Fall Time
tf
13.6
ns
Total Gate Charge
Qg
18.6
nC
Gate-Source Charge
Q gs
5.2
nC
Gate-Drain Charge
Q gd
4.9
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
Forward Transconductance (1)(3)
V GS =⫾12V, V DS =0V
I D =11A
I D =8.4A
DYNAMIC (3)
V DS =10 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =10V, I D =1A
R G =6.0Ω, V GS =4.5V
V DS =10V,V GS =4.5V,
I D =11A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =11.5A,
V GS =0V
16.3
ns
T J =25°C, I F =2.1A,
di/dt= 100A/µs
7.8
nC
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JANUARY 2005
4
ZXMN2A02X8
TYPICAL CHARACTERISTICS
T = 150°C
7V
7V
2.5V
10
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
2.5V
2V
10
2V
VGS
1
1.5V
0.1
1.5V
1
VGS
1V
0.1
0.1
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
10
T = 150°C
T = 25°C
1
VDS = 10V
0.1
1
VGS = 4.5V
ID = 11A
1.4
RDS(on)
1.2
1.0
0.8
VGS(th)
0.6
VGS = VDS
ID = 250uA
0.4
0.2
-50
2
VGS Gate-Source Voltage (V)
1.5V
T = 25°C
VGS
1
2V
0.1
2.5V
4V
7V
0.01
1
50
100
150
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
10
0
Tj Junction Temperature (°C)
10
T = 150°C
10
T = 25°C
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ID Drain Current (A)
On-Resistance v Drain Current
ISSUE 2 - JANUARY 2005
5
ZXMN2A02X8
TYPICAL CHARACTERISTICS
VGS = 0V
f = 1MHz
2500
VGS Gate-Source Voltage (V)
C Capacitance (pF)
3000
2000
1500
CISS
COSS
1000
CRSS
500
0
0.1
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
4.5
4.0 ID = 11A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5
VDS = 10V
10
15
20
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
ISSUE 2 - JANUARY 2005
6
ZXMN2A02X8
PACKAGE OUTLINE
PAD LAYOUT
PACKAGE DIMENSIONS
DIM
A
Millimetres
Inches
MIN
MAX
MIN
MAX
ᎏ
1.10
ᎏ
0.043
DIM
Millimetres
MIN
e
MAX
0.65 BSC
2.90
3.10
Inches
MIN
MAX
0.0256 BSC
A1
0.05
0.15
0.002
0.006
E
B
0.25
0.40
0.010
0.016
H
C
0.13
0.23
0.005
0.009
L
0.40
0.70
0.016
0.028
D
2.90
3.10
0.114
0.122
⍜°
0°
6°
0°
6°
4.90 BSC
0.114
0.122
0.193 BSC
© Zetex Semiconductors plc 2005
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ISSUE 2 - JANUARY 2005
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