12F/12FR NAINA 12AMP SILICON POWER DIODE DO-4 FEATURES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS 12F/ 12FR 12F/FR IF (A) Maximum Average Forward Current Te=1500C V FM Maximum peak forward voltage drop @ Rated IF(AV) IFSMMaximum peak one cycle (non-rep) surge current 10msec IFRMMaximum peak one cycle (non -rep) surge current 10msec I2t Maximum I2t rating (non-rep.) for 5 to 10 m sec. F 12A A C C A FR 4 10 11A/F 1.2V 250 A 19 11.5 M6 x 1.0 60 A 250A 2Sec THERMAL MECHANICAL SPECIFICATIONS θJC TJ Tstg W Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (non-lubricated threads) Approx, weight 2oC/W -65oC to 150oC -65 oC to 150oC 0.14 M-Kg min, 0.17 M-kg max 7 gms. ELECTRICAL RATINGS TYPE 12F/12FR VRRM Max. repetitive peak voltage (v) 10 20 40 60 80 100 120 140 160 100 200 400 600 800 1000 1200 1400 1600 VR(RMS) Max. R.M.S. reverse voltage (V) 70 140 280 420 560 700 840 980 VR Max. D.C. Blocking Voltage (V) 100 200 400 60 800 1000 1200 1400 1600 40 80 160 240 320 400 480 560 640 100 100 100 100 100 100 100 100 100 IR(AV) Recommended R.M.S. working Voltage(v) Max. Average reverse leakage current @ VRMM Tc 250C uA NAINA SEMICONDUCTOR LTD. D95,SECTOR 63 NOIDA(INDIA) e-mail : [email protected], web site : www.nainasemi.com 1120