NAINA 16F

16F/16FR
NAINA
16AMP SILICON POWER DIODE
DO-4
FEATURES
• All Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
* Available In UNF and metric thread
ELECTRICAL SPECIFICATIONS
16F/ 16FR
16F/FR
IF(A)
Maximum Average Forward
Current Te=1500C
V FM
Maximum peak forward
voltage drop @ Rated IF(AV)
IFSMMaximum peak one cycle
(non-rep) surge current 10msec
IFRMMaximum peak one cycle (non
-rep) surge current 10msec
I2t
Maximum I2t rating (non-rep.)
for 5 to 10 m sec.
16A
F
A
C
C
A
FR
1.2V
4
19
10
11A/F
11.5
300A
M6 x 1.0
80A
450A 2Sec
THERMAL MECHANICAL SPECIFICATIONS
θJC
TJ
Tstg
W
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque (non-lubricated threads)
Approx, weight
1.5oC/W
-65oC to 150oC
-65 oC to 150oC
0.14 M-Kg min, 0.17 M-kg max
7 gms.
ELECTRICAL RATINGS
TYPE
16F/16FR
VRRM
Max. repetitive peak
voltage (v)
10
20
40
60
80
100
120
140
160
100
200
400
600
800
1000
1200
1400 1600
VR(RMS)
Max. R.M.S. reverse voltage (V)
70
140
280
420
560
700
840
980
VR
Max. D.C. Blocking Voltage (V)
100
200
400
60
800
1000
1200
1400 1600
40
80
160
240
320
400
480
560
640
100
100
100
100
100
100
100
100
100
IR(AV)
Recommended R.M.S. working
Voltage(v)
Max. Average reverse leakage
current @ VRMM Tc 250C uA
NAINA SEMICONDUCTOR LTD,
D-95 SECTOR63 NOIDA (INDIA).
e-mail :[email protected], web site: www.nainasemi.com
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