APT5016BFLL
APT5016SFLL
500V 30A 0.160Ω
POWER MOS 7
R
FREDFET
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-247
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT5016BFLL_SFLL
UNIT
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25°C
30
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
329
Watts
Linear Derating Factor
2.63
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
120
-55 to 150
°C
300
Amps
30
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 15A)
TYP
MAX
UNIT
Volts
0.160
Ohms
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
6-2004
Characteristic / Test Conditions
050-7026 Rev C
Symbol
APT5016BFLL_SFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 250V
tf
ID = 30A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
256
VDD = 333V, VGS = 15V
172
ID = 30A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
14
RG = 1.6Ω
Eon
UNIT
pF
60
72
16
42
10
10
27
ID = 30A @ 25°C
Turn-off Delay Time
MAX
2833
600
VDD = 250V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
476
VDD = 333V VGS = 15V
ID = 30A, RG = 5Ω
215
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
MAX
30
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
1
(Body Diode)
120
Diode Forward Voltage
2
(VGS = 0V, IS = -30A)
1.3
Volts
15
V/ns
Peak Diode Recovery
dt
UNIT
dv/
5
dt
t rr
Reverse Recovery Time
(IS = -30A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
500
Q rr
Reverse Recovery Charge
(IS = -30A, di/dt = 100A/µs)
Tj = 25°C
1.3
Tj = 125°C
4.5
IRRM
Peak Recovery Current
(IS = -30A, di/dt = 100A/µs)
Tj = 25°C
12
Tj = 125°C
18
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.38
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.25
0.5
0.20
Note:
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7026 Rev C
6-2004
0.40
0.30
0.3
0.10
0.05
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
t1
t2
SINGLE PULSE
0.1
10-5
10-4
10-3
°C/W
4 Starting Tj = +25°C, L = 2.89mH, RG = 25Ω, Peak IL = 30A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID30A di/dt ≤ 700A/µs VR ≤ 500 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
UNIT
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT5016BFLL_SFLL
80
8V
0.0174
Power
(watts)
0.00401F
0.143
0.00641F
0.219
0.158F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
15 &10V
60
7.5V
7V
40
6.5V
20
6V
5.5V
Case temperature. (°C)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
60
40
TJ = +125°C
20
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
1.1
VGS=10V
1.05
VGS=20V
1.0
0.95
0.9
0
I
V
2.0
D
1.10
1.05
1.00
0.95
0.90
0.85
-50
= 15A
GS
= 10V
1.5
1.0
0.5
0.0
-50
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
GS
1.15
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
30
NORMALIZED TO
V
= 10V @ 15A
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
6-2004
0
TJ = -55°C
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
050-7026 Rev C
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
Typical Performance Curves
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
5,000
OPERATION HERE
LIMITED BY RDS (ON)
1
10mS
D
14
VDS=100V
12
10
VDS=250V
8
VDS=400V
6
4
2
0
0
10 20 30 40 50 60 70 80 90 100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
1,000
Coss
100
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = 30
Ciss
10
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
APT5016BFLL_SFLL
10,000
120
200
100
50
TJ =+150°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
60
V
td(off)
G
50
= 333V
DD
R
50
TJ =+25°C
= 5Ω
T = 125°C
J
V
DD
R
G
= 5Ω
T = 125°C
J
30
L = 100µH
20
td(on)
10
0
0
1000
10
DD
R
050-7026 Rev C
SWITCHING ENERGY (µJ)
6-2004
G
20
30
40
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
0
1200
= 333V
10
V
DD
I
diode reverse recovery.
600
Eon
400
200
Eoff
10
D
1000
J
L = 100µH
0
tr
= 5Ω
E ON includes
0
20
0
50
T = 125°C
800
30
10
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
tf
40
= 333V
tr and tf (ns)
40
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
L = 100µH
20
20
= 333V
= 30A
T = 125°C
J
Eoff
L = 100µH
EON includes
800
diode reverse recovery.
600
Eon
400
200
30
40
50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT5016BFLL_SFLL
Gate Voltage
10 %
90%
TJ = 125 C
Gate Voltage
td(on)
d(off)
d(off)
tr
Drain Voltage
Drain Current
90%
90%
5%
5%
10 %
tf
10%
0
Drain Voltage
Switching Energy
T = 125 C
J
t
t
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7026 Rev C
0.46 (.018)
0.56 (.022) {3 Plcs}
6-2004
3.50 (.138)
3.81 (.150)