NCEPOWER NCE20G120T

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NCE20G120T
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NCE20G120T
1200V, 20A, Trench NPT IGBT
Features
Trench NPT( Non Punch Through) IGBT
High speed switching
Low saturation voltage: VCE(sat)=2.0V@IC=20A
High input impedance
z
z
z
z
G
Applications
Inductive heating, Microwave oven, Inverter, UPS, etc.
Soft switching applications
z
z
C E
C
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.
G
E
Absolute Maximum Ratings
Symbol Description
Ratings
Units
VCES
Collector to Emitter Voltage
1200
V
VGES
Gate to Emitter Voltage
+/-25
V
IC
ICM(1)
PD
Continuous Collector Current
@TC=25°C
40
A
Continuous Collector Current
@TC=100°C
20
A
60
A
Pulsed Collector Current
Maximum Power Dissipation
@TC=25°C
298
W
Maximum Power Dissipation
@TC=100°C
119
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering Purposes, 1/8" from
case for 5seconds
300
°C
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
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Thermal Characteristics
Symbol Parameter
Typ.
Max.
Units
RƟJC
Thermal Resistance, Junction to Case
-
0.42
°C/W
RJA
Thermal Resistance, Junction to Ambient
-
40
°C/W
Electrical Characteristics of the IGBT TC=25°C
Symbol Parameter
Off Characteristics
Test Conditions
Min.
Typ.
Max.
Units
BVCES
Collector to Emitter
Breakdown Voltage
VGE=0V, Ic=1mA
1200
-
-
V
ICES
Collector Cut-Off Current
VCE=VCES, VGE=0V
-
-
1
mA
IGES
G-E Leakage Current
VGE=VGES, VCE=0V
-
-
+/-250
nA
-
7.0
V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation
Voltage
IC=20mA, VCE=VGE
4.0
IC=20A, VGE=15V
TC=25°C
-
2
2.5
V
IC=20A, VGE=15V
TC=125°C
-
2.15
-
V
Dynamic Characteristics
Cies
Input Capacitance
-
3080
-
pF
Coes
Output Capacitance
-
95
-
pF
Cres
Reverse Transfer
Capacitance
-
60
-
pF
VCE=30V, VGE=0V,
f=1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
30
-
ns
tr
Rise Time
-
79
-
ns
td(off)
Turn-Off Delay Time
-
143
-
ns
tf
Fall Time
-
217
320
ns
Eon
Turn-On Switching Loss
-
0.42
-
mJ
Eoff
Turn-Off Switching Loss
-
0.71
1.05
mJ
Ets
Total Switching Loss
-
1.13
-
mJ
td(on)
Turn-On Delay Time
-
29
-
ns
tr
Rise Time
-
93
-
ns
td(off)
Turn-Off Delay Time
-
147
-
ns
tf
Fall Time
-
259
-
ns
Eon
Turn-On Switching Loss
-
0.47
-
mJ
Eoff
Turn-Off Switching Loss
-
0.86
-
mJ
Ets
Total Switching Loss
-
1.33
-
mJ
Qg
Total Gate Charge
-
137
-
nC
Qge
Gate to Emitter Charge
-
23
-
nC
Qgc
Gate to Collector Charge
-
65
-
nC
VCC=600V,IC=20A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=25°C
VCC=600V,IC=20A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=125°C
VCC=600V,IC=20A,
VGE=15V
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Typical Performance Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
Collector Current, IC(A)
Collector Current IC, (A)
Figure 1. Typical Output Characteristics
Collector Emitter Voltage, VCE(V)
Collector Emitter Voltage, VCE(V)
Figure 4. Saturation Voltage vs. VGE
Collector Emitter Voltage, IC(V)
Collector Emitter Voltage, IC(V)
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Case temperature, Tc(°C)
Figure 6. Capacitance Characteristics
Capacitance (pF)
Collector Emitter Voltage, IC(V)
Figure 5. Saturation Voltage vs. VGE
Gate Emitter Voltage, VGE( V)
Gate Emitter Voltage, VGE( V)
Collector Emitter Voltage, VCE(V)
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Typical Performance Characteristics (Continued)
Figure 9. Turn-off Characteristics vs. Gate
Resistance
Switching Time (ns)
Switching Time (ns)
Figure 8. Turn-on Characteristics vs. Gate
Resistance
Gate Resistance, RG (Ω)
Gate Resistance, RG (Ω)
Figure 11. Turn-on Characteristics vs. Collector
Current
Switching Loss (mJ)
Switching Loss (mJ)
Figure 10. Switching Loss vs. Gate Resistance
Collector Current, IC (A)
Gate Resistance, RG (Ω)
Figure 13. Switching Loss vs. Collector Current
Switching Loss (mJ)
Switching Loss (mJ)
Figure 12. Turn-Off Characteristics vs.
Collector Current
Collector Current, IC (A)
Collector Current, IC (A)
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Typical Performance Characteristics (Continued)
Figure 15. SOA Characteristics
Collector Current, IC(A)
Gate-Emitter Voltage (V)
Figure14. Gate Charge Characteristics
Gate Charge, Qg (nC)
Collector Emitter Voltage, (V)
Collector Current, IC(A)
Figure 16. Turn-Off SOA
Collector Emitter Voltage, (V)
Figure 17. Transient Thermal Impedance of IGBT
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Mechanical Dimensions (continued)
TO-247
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ATTENTION:
■
Any and all NCE products described or contained herein do not have specifications that can handle applications that
require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose
failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE representative nearest you before using any NCE products described or contained herein in such
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regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice
due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
NCE product that you intend to use.
■ This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without
notice.
■
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