HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLER PS2705-1 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV:3.75 k Vr.m.s. MIN PS2705-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The device is mounted in a plastic SOP (Small Out-line Package) for high density applications and has a shield effect to cut off ambient light. • SOP (SMALL OUT-LINE PACKAGE) • ISOLATED CHANNELS PER EACH PACKAGE • AC INPUT RESPONSE APPLICATIONS • HIGH SPEED SWITCHING tr = 3 µs, tf = 5 µs TYP Interface circuit for various instrumentations and control equipment. • LOW COLLECTOR TO EMITTER DARK CURRENT ICEO: 5 nA TYP @ TA = 25 °C, VCE = 40 V • AC LINE/DIGITAL LOGIC • HIGH CURRENT TRANSFER RATIO CTR = 100% TYP • DIGITAL LOGIC INTERFACE • TWISTED PAIR LINE RECEIVER • TAPE AND REEL AVAILABLE • TELEPHONE/TELEGRAPH LINE RECEIVER • SEQUENCE CONTROLLERS • SYSTEMS APPLICATIONS, MEASURING INSTRUMENTS ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER Transistor Diode SYMBOLS PARAMETERS UNITS MIN TYP MAX 1.4 VF Forward Voltage, IF = ± 5 mA V 1.1 Ct Terminal Capacitance, V = 0, f = 1.0 MHz pF 60 ICEO Collector to Emitter Dark Current, VCE = 40 V, IF = 0 nA CTR Current Transfer Ratio1, IF = ± 5 mA, VCE = 5 V % CTR1/CTR2 Coupled PS2705-1 CTR Ratio3, IF = ± 5 mA, VCE = 5 V Collector Saturation Voltage, IF = ±10 mA, IC = 2 mA V RI-O Isolation Resistance, Vin-out = 1.0 k VDC Ω CI-O VCE (sat) 100 50 100 0.3 1.0 1011 Isolation Capacitance, V = 0, f = 1.0 MHZ pF Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 Ω µs 3 tf Fall Time2, VCC = 5 V, IC = 2 mA, RL = 100 Ω µs 5 2. Test Circuit for Switching Time 3.0 0.3 tr Notes: 1. CTR Rank M: 50 - 150% L: 100 - 300% N: 50 - 300% 300 0.4 3. CTR1 = IC1/IF1, CTR2 = IC2/IF2 IF PULSE INPUT 1 4 3 ( 1 2 PS2705-1 PW = 100 µs Duty Cycle = 1/10 4 VCC IF1 ) IC1 VCE IC2 2 50 Ω 3 IF2 VOUT RL = 100 Ω California Eastern Laboratories PS2705-1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS PS2705-1 Diode IF PD Forward Current (DC) Power Dissipation mA mW/Ch ±50 80 ∆PD/°C Power Dissipation Derating mW/°C 0.8 IF (PEAK) Peak Forward Current (PW = 100 µs, Duty Cycle 1%) A ±1 Collector to Emitter Voltage (IC = ImA, IB = 0) Emitter to Collector Voltage (IE = 100µA, IB = 0) Collector Current Power Dissipation Power Dissipation Derating V 40 V 6 mA/Ch mW/Ch mW/°C 80 150 1.5 Transistor VCEO VECO IC PC ∆PC/°C Coupled BV TSTG Isolation Voltage2 Vr.m.s. 3750 °C °C -55 to +150 -55 to +100 Storage Temperature Ambient Temperature TA Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and ouput. TYPICAL PERFORMANCE CURVES (TA = 25°C) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 Transistor Power Dissipation, PC (mW) Diode Power Dissipation, PD (mW) 100 75 50 25 0 25 50 75 150 1.5 mA/ ˚C 100 50 0 100 25 50 75 100 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 100 80 10 Forward Current, IF (mA) Forward Current, IF (mA) 60 TA = 100 ˚C 75 ˚C 50 ˚C 25 ˚C 0 ˚C -25 ˚C -55 ˚C 1 0.1 40 20 0 -20 -40 -60 0.01 0.6 0.8 1.0 1.2 1.4 Forward Voltage, VF (V) 1.6 -80 -1.6 -1.2 -0.8 -0.4 0 0.4 0.8 Forward Voltage, VF (V) 1.2 1.6 PS2705-1 TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 30 10000 10 mA 1000 40 V 24 V 10 V 100 10 1 10 5 mA 5 2 2 mA 1 IF = 1 mA 0.5 0.2 0.1 -60 -40 -20 0 20 40 60 80 0.1 100 0 0.2 0.6 0.8 1.0 Collector Saturation Voltage, VCE(sat) (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE 40 30 30 Normalized Output Current, CTR 1.2 mA 20 mA 15 mA 20 10 mA 10 IF = 5 mA 0 2 4 6 7 1.0 0.8 0.6 0.4 0.2 0 -55 10 Normalized to 1.0 at TA = 25 ˚C IF = 5 mA, VCE = 5 V -25 0 25 50 75 100 Ambient Temperature, TA (°C) Collector to Emitter Voltage, VCE (V) CURRENT TRANSFER RATIO vs. FORWARD CURRENT SWITCHING TIME vs. LOAD RESISTANCE 100 300 VCE = 5 V VCC = 5 V IC = 2 mA 50 250 ton Switching Time,t (µs) Current Transfer Ratio, CTR (%) 0.4 Ambient Temperature, TA (°C) 50 Collector Current, IC (mA) 25 mA 20 Collector Current, IC (mA) Collector to Emitter Dark Current, ICEO (nA) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 200 Sample A 150 100 Sample B 50 0.5 1 5 10 Forward Current , IF (mA) 5 td ts 1 0.5 Sample C 0.05 0.1 toff 10 50 50 100 500 1k Load Resistance, RL (Ω) 2k PS2705-1 TYPICAL PERFORMANCE CURVES (TA = 25°C) SWITCHING TIME vs. LOAD RESISTANCE IF = 5 mA, VCC = 5 V, CTR = 169 % FREQUENCY RESPONSE 1.0 tf 0.8 ts 100 50 10 5 tr td 1 Normalized Gain, Av Switching Time,t (µs) 1000 500 0.6 100 Ω RL = 1 kΩ 0.4 510 Ω 300 Ω 0.2 0.5 0.1 100 0 500 1k 5k 10k 5 50k 100k 10 50 100 500 Frequency, f (kHz) Load Resistance, RL (Ω) CTR DEGRADATION 1.2 OUTLINE DIMENSIONS (Units in mm) ∆CTR, Normalized 1.0 PS2705-1 0.8 IF = 1 mA, TA = 25°C IF = 5 mA, TA = 25°C IF = 20 mA, TA = 25°C IF = 20 mA, TA = 60°C 0.6 4 PIN CONNECTION (Top View) 3 4 3 1. 2. 3. 4. 0.4 0.2 Anode, Cathode Cathode, Anode Emitter Collecter 1 2 1 0.0 1 10 2 10 3 10 4 Time, Hr 10 5 2 7.0 ± 0.3 4.4 4.5 MAX 10 6 2.0 2.3 MAX 0.1 ± 0.1 +0.10 0.15 -0.05 2.54 1.2 MAX 0.4 +0.10 -0.05 0.5 ± 0.3 1.3 PS2705-1 TAPING SPECIFICATIONS (Units in mm) 5.5 ± 0.1 1.55 ± 0.1 1.55 ± 0.1 2.4 ± 0.1 12.0 ± 0.2 2.0 ± 0.1 4.0 ± 0.1 1.75 ± 0.1 OUTLINE AND DIMENSIONS (TAPE) 7.4 ± 0.1 0.3 4.6 ± 0.1 8.0 ± 0.1 TAPING DIRECTION PS2705-1-E3 PS2705-1-F3 PS2705-1-E4 PS2705-1-F4 OUTLINE AND DIMENSIONS (REEL) 1.5±0.5 ° 6.0±1 φ66 0° 2.0±0.5 60 1.5±0.1 13.0±0.5 12 PS2702-1-E3, E4: φ178 PS2702-1-F3, F4: φ330 φ21.0±0.8 1.5±0.1 +2.0 12.4 -0.0 18.4 MAX Packing: PS2705-1-E3, E4 PS2705-1-F3, F4 900 pcs/reel 3500 pcs/reel PS2705-1 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 ˚C (package surface temperature) • Time of temperature higher than 210 ˚C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Peak temperature 235˚ C or below (2) Dip soldering • Temperature 260 ˚C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). CAUTION This device contains GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 01/17/2001 DATA SUBJECT TO CHANGE WITHOUT NOTICE