DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Wideband response : fu = 2.8 GHz TYP. @ 3 dB bandwidth • Low current : ICC = 24.5 mA TYP. • Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 0.95GHz : PO (sat) = +12.5 dBm TYP. @ f = 2.15 GHz • High linearity : PO (1dB) = +9.0 dBm TYP. @ f = 0.95 GHz : PO (1dB) = +7.0 dBm TYP. @ f = 2.15 GHz • Power gain : GP = 32.5 dB TYP. @ f = 0.95 GHz : GP = 33.5 dB TYP. @ f = 2.15 GHz • Noise Figure : NF = 3.7 dB TYP. @ f = 0.95 GHz : NF = 3.7 dB TYP. @ f = 2.15 GHz • Supply voltage : VCC = 4.5 to 5.5 V • Port impedance : input/output 50 Ω APPLICATIONS • IF amplifiers in LNB for DBS converters etc. ORDERING INFORMATION Part Number µPC3225TB-E3 Order Number Package µPC3225TB-E3-A 6-pin super minimold (Pb-Free) Note Marking C3M Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, please contact your nearby sales office Part number for sample order: µPC3225TB. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10500EJ01V0DS (1st edition) Date Published December 2004 CP(K) Printed in Japan NEC Compound Semiconductor Devices, Ltd. 2004 µPC3225TB PIN CONNECTIONS C3M (Top View) 3 2 1 Pin No. Pin Name 1 OUTPUT 2 GND 3 VCC 4 INPUT 5 GND 6 GND (Bottom View) 4 4 3 5 5 2 6 6 1 PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) fu PO (sat) GP NF ICC (GHz) (dBm) (dB) (dB) (mA) µPC2708TB 2.9 +10.0 15 6.5 26 µPC2709TB 2.3 +11.5 23 5.0 25 C1E µPC2710TB 1.0 +13.5 33 3.5 22 C1F µPC2776TB 2.7 +8.5 23 6.0 25 C2L µPC3223TB 3.2 +12.0 23 4.5 19 C3J 24.5 C3M Part No. µPC3225TB 2.8 +15.5 Note 32.5 Note 3.7 Note Package 6-pin super minimold Note f = 0.95 GHz Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2 Data Sheet PU10500EJ01V0DS Marking C1D µPC3225TB PIN EXPLANATION Pin Pin No. Name 4 INPUT Applied Pin Voltage Voltage (V) (V) − Function and Applications Note 0.98 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to signal source with capacitor for DC cut. 1 OUTPUT Voltage − Signal output pin. The inductor must be attached between VCC and output pins to supply as same current to the internal output transistors. as VCC through external inductor 3 VCC 4.5 to 5.5 − Power supply pin. Which biases the internal input transistor. This pin should be externally equipped with bypass capacitor to minimize its impedance. 2 GND 0 − Ground pin. 5 This pin should be connected to system ground with minimum 6 inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance defference. Note Pin voltage is measured at VCC = 5.0 V Data Sheet PU10500EJ01V0DS 3 µPC3225TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C, Pin 1 and 3 6 V Total Circuit Current ICC TA = +25°C 45 mA Power Dissipation PD TA = +85°C 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin 0 dBm Note TA = +25°C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol VCC Conditions The same voltage should be applied MIN. TYP. MAX. Unit 4.5 5.0 5.5 V −40 +25 +85 °C to pin 1 and 3. Operating Ambient Temperature TA ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No input signal 20.0 24.5 31.0 mA Power Gain GP f = 0.95 GHz, Pin = −35.0 dBm 30.0 32.5 35.0 dB f = 2.15 GHz, Pin = −35.0 dBm 30.5 33.5 36.0 f = 0.95 GHz, Pin = －5.0 dBm +13.5 +15.5 − f = 2.15 GHz, Pin = －5.0 dBm +10.5 +12.5 − f = 0.95 GHz +7.0 +9.0 − f = 2.15 GHz +5.0 +7.0 − f = 0.95 GHz − 3.7 4.5 f = 2.15 GHz − 3.7 4.5 3 dB down below flat gain at f = 0.95 − 2.8 − GHz f = 0.95 GHz, Pin = −35.0 dBm 36.0 41.0 − dB f = 2.15 GHz, Pin = −35.0 dBm 36.0 45.0 − f = 0.95 GHz, Pin = −35.0 dBm 7.0 8.5 − f = 2.15 GHz, Pin = −35.0 dBm 8.0 11.0 − f = 0.95 GHz, Pin = −35.0 dBm 7.0 10.5 − f = 2.15 GHz, Pin = −35.0 dBm 9.5 13.0 − − 2.5 4.0 Saturated Output Power Gain 1 dB Compression Output Power Noise Figure Upper Limit Operating Frequency PO (sat) PO (1 dB) NF fu dBm dBm dB GHz Isolation Input Return Loss Output Return Loss Gain Flatness 4 ISL RLin RLout ∆GP f = 0.95 to 2.15 GHz Data Sheet PU10500EJ01V0DS dB dB dB µPC3225TB OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Output intercept point Symbol OIP3 Test Conditions Reference Value Unit f = 0.95 GHz 21.0 dBm f = 2.15 GHz 16.0 Data Sheet PU10500EJ01V0DS 5 µPC3225TB TEST CIRCUIT C2 6 1 GND OUT 5 L1 15 nH 100 pF 50 Ω 2 GND GND C4 1 000 pF C3 1 000 pF C1 4 330 pF 3 IN VCC VCC The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Value Maker Type code C1 330 pF Murata GMR36CH C2 100 pF Murata GMR36CH C3 1 000 pF Murata GMR39CH C4 1 000 pF Murata GMR36B L1 15 nH Susumu TFL0816 INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 24.5 mA, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 3) and output pin (pin 1). Select inductance, as the value listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin. Capacitors of 330 pF for the input pin and 100 pF for the output pin are recommendable as the coupling capacitors. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. 6 Data Sheet PU10500EJ01V0DS µPC3225TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD 5 6 C1 3 2 C4 L1 4 1 C2 C3 COMPONENT LIST Value C1 C2 C3, C4 L1 330 pF 100 pF 1 000 pF Notes 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. : Through holes 15 nH Data Sheet PU10500EJ01V0DS 7 µPC3225TB TYPICAL CHARACTERISTICS (VCC = 5.0 V, TA = +25°C, unless otherwise specified) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 35 26.0 VCC = 5.0 V 25 20 15 10 TA = − 40°C +25°C +85°C 5 0 VCC = 5.0 V 25.5 Circuit Current ICC (mA) Circuit Current ICC (mA) 30 1 2 4 3 5 6 25.5 24.5 24.5 23.5 23.0 22.5 − 60 − 40 − 20 7 Supply Voltage VCC (V) 30 28 28 1.0 2.0 3.0 26 0 4.0 1.0 − 15 − 25 − 25 − 35 − 45 1.0 2.0 3.0 4.0 ISOLATION vs. FREQUENCY − 15 − 55 2.0 Frequency f (GHz) Isolation ISL (dB) Isolation ISL (dB) 100 30 ISOLATION vs. FREQUENCY VCC = 4.5 V 5.0 V 5.5 V 3.0 4.0 TA = − 40°C +25°C +85°C VCC = 5.0 V − 35 − 45 − 55 − 65 0 1.0 2.0 Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. 8 80 32 Frequency f (GHz) − 65 0 60 TA = − 40°C +25°C +85°C VCC = 5.0 V 34 Power Gain GP (dB) Power Gain GP (dB) 32 26 0 40 POWER GAIN vs. FREQUENCY 36 VCC = 4.5 V 5.0 V 5.5 V 34 20 Operating Ambient Temperature TA (°C) POWER GAIN vs. FREQUENCY 36 0 Data Sheet PU10500EJ01V0DS 3.0 4.0 INPUT RETURN LOSS vs. FREQUENCY 0 0 VCC = 4.5 V 5.0 V 5.5 V −4 −8 − 12 − 16 Output Return Loss RLout (dB) − 20 0 1.0 3.0 2.0 Input Return Loss RLin (dB) INPUT RETURN LOSS vs. FREQUENCY −8 − 12 − 16 0 1.0 3.0 2.0 4.0 Frequency f (GHz) Frequency f (GHz) OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY −4 −4 VCC = 4.5 V 5.0 V 5.5 V −8 − 12 − 16 − 20 − 24 0 1.0 3.0 2.0 TA = − 40°C +25°C +85°C −8 − 12 − 16 − 20 VCC = 5.0 V − 24 0 1.0 4.0 35 38 VCC = 4.5 V 5.0 V 5.5 V f = 950 MHz 37 34 VCC = 4.5 V 5.0 V 5.5 V f = 1 500 MHz Power Gain GP (dB) 36 33 32 31 30 29 35 34 33 32 31 28 30 27 29 26 − 40 4.0 POWER GAIN vs. INPUT POWER POWER GAIN vs. INPUT POWER 36 3.0 2.0 Frequency f (GHz) Frequency f (GHz) Power Gain GP (dB) TA = − 40°C +25°C +85°C VCC = 5.0 V −4 − 20 4.0 Output Return Loss RLout (dB) Input Return Loss RLin (dB) µPC3225TB − 35 − 30 − 25 − 20 − 15 − 10 −5 28 − 40 − 35 − 30 − 25 − 20 − 15 − 10 −5 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10500EJ01V0DS 9 µPC3225TB POWER GAIN vs. FREQUENCY 36 OUTPUT POWER vs. INPUT POWER VCC = 4.5 V 5.0 V 5.5 V 35 Output Power Pout (dBm) 34 Power Gain GP (dB) 18 33 32 31 30 29 28 VCC = 5.0 V 12 6 0 −6 f = 950 MHz 1 500 MHz 2 150 MHz 27 f = 2 150 MHz 26 − 40 − 35 − 30 − 25 − 20 − 15 − 10 −5 − 12 − 45 Input Power Pin (dBm) − 20 VCC = 4.5 V 5.0 V 5.5 V − 15 − 10 −5 Output Power Pout (dBm) 18 f = 950 MHz 16 14 12 10 8 6 4 2 0 −2 −4 −6 −8 − 40 − 35 − 30 Input Power Pin (dBm) − 20 VCC = 4.5 V 5.0 V 5.5 V − 15 − 10 −5 Output Power Pout (dBm) 18 f = 1 500 MHz 16 14 12 10 8 6 4 2 0 −2 −4 −6 −8 − 40 − 35 − 30 Input Power Pin (dBm) − 20 − 15 − 10 −5 TA = − 40°C +25°C +85°C − 25 − 20 − 15 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 10 − 25 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) − 25 TA = − 40°C +25°C +85°C Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER 18 f = 1 500 MHz 16 14 12 10 8 6 4 2 0 −2 −4 −6 −8 − 40 − 35 − 30 −5 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) − 25 − 15 − 25 Input Power Pin (dBm) OUTPUT POWER vs. INPUT POWER 18 f = 950 MHz 16 14 12 10 8 6 4 2 0 −2 −4 −6 −8 − 40 − 35 − 30 − 35 Data Sheet PU10500EJ01V0DS − 10 −5 µPC3225TB 18 f = 2 150 MHz 16 14 12 10 8 6 4 2 0 −2 −4 −6 −8 − 40 − 35 − 30 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER − 25 − 20 VCC = 4.5 V 5.0 V 5.5 V − 15 − 10 −5 18 f = 2 150 MHz 16 14 12 10 8 6 4 2 0 −2 −4 −6 −8 − 40 − 35 − 30 Input Power Pin (dBm) TA = − 40°C +25°C +85°C − 25 − 20 − 15 − 10 −5 Input Power Pin (dBm) Output Power (2 tones) Pout/tone (dBm) OUTPUT POWER (2 TONES) vs. INPUT POWER 20 VCC = 5.0 V, ∆ f = 1 MHz f = 950/951 MHz : OIP3 = 21.0 dBm f = 1 500/1 501 MHz : OIP3 = 18.2 dBm f = 2 150/2 151 MHz : OIP3 = 16.0 dBm 10 0 − 10 − 20 − 30 − 40 − 50 − 60 − 45 − 40 − 35 − 30 − 25 f = 950 MHz 1 500 MHz 2 150 MHz − 20 − 15 − 10 Input Power Pin/tone (dBm) 20 OUTPUT POWER (2 TONES) vs. INPUT POWER f = 950/951 MHz 10 0 − 10 − 20 − 30 − 40 − 50 VCC = 4.5 V 5.0 V 5.5 V − 60 − 45 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 Output Power (2 tones) Pout/tone (dBm) Output Power (2 tones) Pout/tone (dBm) OUTPUT POWER (2 TONES) vs. INPUT POWER 20 f = 950/951 MHz 10 0 − 10 − 20 − 30 − 40 − 50 TA = − 40°C +25°C +85°C − 60 − 45 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 Input Power Pin/tone (dBm) Input Power Pin/tone (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10500EJ01V0DS 11 µPC3225TB f = 1 500/1 501 MHz 10 0 − 10 − 20 − 30 − 40 − 50 VCC = 4.5 V 5.0 V 5.5 V − 60 − 45 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 Output Power (2 tones) Pout/tone (dBm) 20 20 f = 1 500/1 501 MHz 10 0 − 10 − 20 − 30 − 40 − 50 TA = − 40°C +25°C +85°C − 60 − 45 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 Input Power Pin/tone (dBm) Input Power Pin/tone (dBm) OUTPUT POWER (2 TONES) vs. INPUT POWER OUTPUT POWER (2 TONES) vs. INPUT POWER f = 2 150/2 151 MHz 10 0 − 10 − 20 − 30 − 40 − 50 VCC = 4.5 V 5.0 V 5.5 V − 60 − 45 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 Output Power (2 tones) Pout/tone (dBm) Output Power (2 tones) Pout/tone (dBm) 20 OUTPUT POWER (2 TONES) vs. INPUT POWER Output Power (2 tones) Pout/tone (dBm) OUTPUT POWER (2 TONES) vs. INPUT POWER 20 f = 2 150/2 151 MHz 10 0 − 10 − 20 − 30 − 40 − 50 TA = − 40°C +25°C +85°C − 60 − 45 − 40 − 35 − 30 − 25 − 20 − 15 − 10 − 5 Input Power Pin/tone (dBm) Input Power Pin/tone (dBm) NOISE FIGURE vs. FREQUENCY 5.0 4.8 Noise Figure NF (dB) 4.6 4.4 4.2 4.0 3.8 3.6 3.4 3.2 3.0 0 500 1 000 1 500 VCC = 4.5 V 5.0 V 5.5 V 2 000 2 500 3 000 Frequency f (GHz) Remark The graphs indicate nominal characteristics. 12 Data Sheet PU10500EJ01V0DS µPC3225TB S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V) S11−FREQUENCY START : 100.000 000 MHz STOP : 3 000.000 000 MHz 1 3 2 1 : 950 MHz 100.41 Ω − 31.537 Ω 2 : 1 600 MHz 58.686 Ω − 47.725 Ω 3 : 2 150 MHz 39.938 Ω − 24.401 Ω 5.3124 pF 2.0843 pF 3.0338 pF S22−FREQUENCY START : 100.000 000 MHz STOP : 3 000.000 000 MHz 1 3 2 1 : 950 MHz 60.637 Ω 32.730 Ω 2 : 1 600 MHz 70.195 Ω − 20.405 Ω 3 : 2 150 MHz 44.370 Ω − 14.407 Ω Data Sheet PU10500EJ01V0DS 5.4835 nH 4.8754 pF 5.1383 pF 13 µPC3225TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 14 Data Sheet PU10500EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPC3225TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC pin. (4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10500EJ01V0DS 15 µPC3225TB • The information in this document is current as of December, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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M8E 00. 4 - 0110 16 Data Sheet PU10500EJ01V0DS µPC3225TB For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: [email protected] (sales and general) [email protected] (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0406