DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low current : ICC = 26.0 mA TYP. • Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz : PO (sat) = +12.0 dBm TYP. @ f = 2.2 GHz • High linearity : PO (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz : PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz • Power gain : GP = 32.8 dB MIN. @ f = 1.0 GHz : GP = 33.5 dB MIN. @ f = 2.2 GHz : ∆GP = 1.0 dB TYP. @ f = 1.0 to 2.2 GHz • Gain flatness • Noise figure : NF = 4 dB TYP. @ f = 1.0 GHz : NF = 4.1 dB TYP. @ f = 2.2 GHz • Supply voltage : VCC = 4.5 to 5.5 V • Port impedance : input/output 50 Ω APPLICATIONS • IF amplifiers in LNB for DBS converters etc. ORDERING INFORMATION Part Number µPC3232TB-E3 Order Number Package µPC3232TB-E3-A 6-pin super minimold (Pb-Free) Marking C3S Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office Part number for sample order: µPC3232TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10597EJ01V0DS (1st edition) Date Published May 2006 NS CP(K) Printed in Japan 2005, 2006 µPC3232TB PIN CONNECTIONS (Top View) C3S 3 (Top View) 2 1 (Bottom View) 4 3 4 4 3 5 2 5 5 2 6 1 6 6 1 Pin No. Pin Name 1 OUTPUT 2 GND 3 VCC 4 INPUT 5 GND 6 GND PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) PO (sat) GP NF ICC (dBm) (dB) (dB) (mA) µPC2708TB +10.0 15.0 6.5 26 µPC2709TB +11.5 23.0 5.0 25 C1E µPC2710TB +13.5 33.0 3.5 22 C1F µPC2776TB +8.5 23.0 6.0 25 C2L µPC3223TB +12.0 23.0 4.5 19 C3J 24.5 C3M Part No. µPC3225TB +15.5 Note 32.5 Note 3.7 Note Package Marking 6-pin super minimold C1D µPC3226TB +13.0 25.0 5.3 15.5 C3N µPC3232TB +15.5 32.8 4.0 26 C3S Note µPC3225TB is f = 0.95 GHz Remark 2 Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Data Sheet PU10597EJ01V0DS µPC3232TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C 6.0 V Total Circuit Current ICC TA = +25°C 45 mA Power Dissipation PD TA = +85°C 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin 0 dBm Note TA = +25°C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply Voltage VCC 4.5 5.0 5.5 V Operating Ambient Temperature TA −40 +25 +85 °C Data Sheet PU10597EJ01V0DS 3 µPC3232TB ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No input signal 20 26 32 mA Power Gain 1 GP1 f = 0.25 GHz, Pin = −35 dBm 29 31.5 34 dB Power Gain 2 GP2 f = 1.0 GHz, Pin = −35 dBm 30 32.8 35.5 Power Gain 3 GP3 f = 1.8 GHz, Pin = −35 dBm 31 33.8 37 Power Gain 4 GP4 f = 2.2 GHz, Pin = −35 dBm 30.5 33.5 36.5 Power Gain 5 GP5 f = 2.6 GHz, Pin = −35 dBm 29 32.2 35.5 Power Gain 6 GP6 f = 3.0 GHz, Pin = −35 dBm 27 30.7 34 Gain Flatness ∆GP f = 1.0 to 2.2 GHz, Pin = −35 dBm − 1.0 − dB K factor 1 K1 f = 1.0 GHz, Pin = −35 dBm − 1.3 − − K factor 2 K2 f = 2.2 GHz, Pin = −35 dBm − 1.9 − − dBm Saturated Output Power 1 PO (sat) 1 f = 1.0 GHz, Pin = 0 dBm +13 +15.5 − Saturated Output Power 2 PO (sat) 2 f = 2.2 GHz, Pin = −5 dBm +9.5 +12 − Gain 1 dB Compression Output Power 1 PO (1 dB) 1 f = 1.0 GHz +8 +11 − Gain 1 dB Compression Output Power 2 PO (1 dB) 2 f = 2.2 GHz +6 +8.5 − Noise Figure 1 NF1 f = 1.0 GHz − 4 4.8 Noise Figure 2 NF2 f = 2.2 GHz − 4.1 4.9 Isolation 1 ISL1 f = 1.0 GHz, Pin = −35 dBm 36 41 − Isolation 2 ISL2 f = 2.2 GHz, Pin = −35 dBm 38 45 − Input Return Loss 1 RLin1 f = 1.0 GHz, Pin = −35 dBm 9.5 13 − Input Return Loss 2 RLin2 f = 2.2 GHz, Pin = −35 dBm 10 14.5 − Output Return Loss 1 RLout1 f = 1.0 GHz, Pin = −35 dBm 12 15.5 − Output Return Loss 2 RLout2 f = 2.2 GHz, Pin = −35 dBm 12 15 − Input 3rd Order Distortion Intercept Point 1 IIP31 f1 = 1 000 MHz, f2 = 1 001 MHz − −9 − Input 3rd Order Distortion Intercept Point 2 IIP32 f1 = 2 200 MHz, f2 = 2 201 MHz − −15.5 − Output 3rd Order Distortion Intercept Point 1 OIP31 f1 = 1 000 MHz, f2 = 1 001 MHz − +23.5 − Output 3rd Order Distortion Intercept Point 2 OIP32 f1 = 2 200 MHz, f2 = 2 201 MHz − +18 − f1 = 1 000 MHz, f2 = 1 001 MHz, − 50 − dBc − 70 − dBc 2nd Order Intermodulation Distortion IM2 dBm dB dB dB dB dBm dBm Pout = −5 dBm/tone 2nd Harmonic 4 2f0 f0 = 1.0 GHz, Pout = −15 dBm Data Sheet PU10597EJ01V0DS µPC3232TB TEST CIRCUIT C6 Feed-through capacitor 1 000 pF L2 68 nH VCC C4 1 000 pF C3 1 000 pF L1 C1 100 pF IN 3 47 nH R1 560 Ω C5 39 pF 4 1 OUT l1 2, 5, 6 GND l2 C2 33 pF Length of microstrip line : l1 = 2.25 mm l2 = 2.75 mm The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value R1 Chip Resistance 560 Ω L1 Chip Inductor 47 nH L2 Chip Inductor 68 nH C1 Chip Capacitor 100 pF C2 Chip Capacitor 33 pF C3, C4 Chip Capacitor 1 000 pF C5 Chip Capacitor 39 pF C6 Feed-through Capacitor 1 000 pF INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 3) and output pin (pin 1). Select inductance, as the value listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable (Refer to the following page). CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). Data Sheet PU10597EJ01V0DS 5 µPC3232TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD 2.25 mm 2.75 mm C2 L1 R1 C1 C3 C4 C5 C6: Feed-through Capacitor COMPONENT LIST Notes Value Size R1 560 Ω 1005 L1 47 nH 1005 2. Back side: GND pattern L2 68 nH 1005 3. Au plated on pattern C1 100 pF 1608 4. : Through holes 5. L1, L2: FDK’s products C2 1. 33 pF 1608 1 000 pF 1005 C5 39 pF 1608 C6 1 000 pF C3, C4 19 × 21.46 × 0.51 mm double sided copper clad RO4003C (Rogers) board. Feed-through Capacitor 6 Data Sheet PU10597EJ01V0DS µPC3232TB TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified) CURCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 35 30 No Input Signal 29 25 20 TA = +85˚C 15 +25˚C 10 27 26 25 24 23 22 5 21 –40˚C 0 0 1 2 3 4 No Input Signal 28 Circuit Current ICC (mA) Circuit Current ICC (mA) 30 5 20 –50 6 Supply Voltage VCC (V) –25 0 25 50 75 100 Operating Ambient Temperature TA (°C) ISOLATION vs. FREQUENCY POWER GAIN vs. FREQUENCY 40 1: –40.01 dB 0.25 GHz 2: –41.32 dB 1 GHz 3: –46.39 dB 2.2 GHz 4: –48.59 dB 2.6 GHz VCC = 5.5 V 20 5.0 V 35 1 30 2 3 4 4.5 V 1: 31.56 dB 0.25 GHz 2: 32.71 dB 1 GHz 3: 33.37 dB 2.2 GHz 4: 32.14 dB 2.6 GHz 25 20 Isolation ISL (dB) Power Gain GP (dB) 40 0 –20 VCC = 4.5 to 5.5 V 1 –40 2 3 4 –60 0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 1: –12.35 dB 0.25 GHz 2: –12.47 dB 1 GHz 3: –13.77 dB 2.2 GHz 4: –14.45 dB 2.6 GHz Input Return Loss RLin (dB) 20 10 0 VCC = 4.5 V 5.0 V –10 1 5.5 V 3 4 1: –14.38 dB 0.25 GHz 2: –15.52 dB 1 GHz 3: –14.84 dB 2.2 GHz 4: –16.50 dB 2.6 GHz 20 10 0 VCC = 5.5 V –10 2 –20 Output Return Loss RLout (dB) Frequency f (GHz) –20 5.0 V 1 2 4.5 V 3 4 0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10597EJ01V0DS 7 µPC3232TB OUTPUT POWER vs. INPUT POWER 20 OUTPUT POWER vs. INPUT POWER 20 VCC = 5.5 V f = 1.0 GHz f = 2.2 GHz 10 5.0 V 4.5 V 5 0 –5 –10 –15 10 5.0 V 5 4.5 V 0 –5 –10 –15 –20 –50 –40 –30 –20 –10 –20 –50 0 –40 Input Power Pin (dBm) 6.5 6.5 6.0 6.0 5.5 VCC = 4.5 V 4.5 4.0 5.0 V 3.5 5.5 V 3.0 0.5 1.0 1.5 2.0 –10 0 TA = +85˚C +25˚C 5.5 5.0 4.5 4.0 3.5 3.0 –40˚C 2.5 2.5 2.5 3.0 2.0 0.0 Frequency f (GHz) 0.5 1.0 1.5 2.0 Frequency f (GHz) Remark The graphs indicate nominal characteristics. 8 –20 NOISE FIGURE vs. FREQUENCY 7.0 Noise Figure NF (dB) Noise Figure NF (dB) NOISE FIGURE vs. FREQUENCY 5.0 –30 Input Power Pin (dBm) 7.0 2.0 0.0 VCC = 5.5 V 15 Output Power Pout (dBm) Output Power Pout (dBm) 15 Data Sheet PU10597EJ01V0DS 2.5 3.0 30 f1 = 1 000 MHz 20 f2 = 1 001 MHz 10 Pout 0 –10 –20 –30 IM3 –40 –50 –60 –70 –45 –40 –35 –30 –25 –20 –15 –10 –5 Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 30 20 f1 = 2 200 MHz f2 = 2 201 MHz 10 Pout 0 –10 –20 –30 IM3 –40 –50 –60 –70 –45 –40 –35 –30 –25 –20 –15 –10 Input Power Pin (dBm) OUTPUT POWER, IM2 vs. INPUT POWER IM2 vs. INPUT POWER 20 f1 = 1 000 MHz 10 f2 = 1 001 MHz Pout 0 –10 –20 IM2 –30 –40 –50 –60 –70 –50 –40 –30 –20 –10 0 10 VCC = 5.5 V 50 40 f1 = 1 000 MHz f2 = 1 001 MHz 5.0 V 30 4.5 V 20 10 0 –50 –45 –40 –35 –30 –25 –20 Input Power Pin (dBm) OUTPUT POWER, 2ND HARMONIC, 3RD HARMONIC vs. INPUT POWER OUTPUT POWER, 2ND HARMONIC, 3RD HARMONIC vs. INPUT POWER 20 f = 1 000 MHz 10 0 2f0 Pout –10 Output Power Pout (dBm) 2nd Harmonic 2f0 (dBc) 3rd Harmonic 3f0 (dBc) 10 60 –5 Input Power Pin (dBm) 20 Output Power Pout (dBm) 2nd Harmonic 2f0 (dBc) 3rd Harmonic 3f0 (dBc) OUTPUT POWER, IM3 vs. INPUT POWER Input Power Pin (dBm) 2nd Order Intermodulation Distortion IM2 (dBc) Output Power Pout (dBm) 2nd Order Intemodulation Distortion IM2 (dBm) Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) µPC3232TB –20 –30 3f0 –40 –50 –60 –70 0 2f0 Pout –10 –20 –30 –40 –50 3f0 –60 –70 –80 –80 –90 –60 f = 2 200 MHz –50 –40 –30 –20 –10 0 –90 –60 –50 –40 –30 –20 –10 0 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10597EJ01V0DS 9 µPC3232TB S-PARAMETERS (TA = +25°C, VDD = VCC = 5.0 V, Pin = −35 dBm) S11−FREQUENCY 1 : 81.254 Ω –9.457 Ω 67.317 pF 250 MHz 2 : 46.533 Ω –23.434 Ω 1 GHz 3 : 35.576 Ω 10.355 Ω 2.2 GHz 4 : 45.572 Ω 17.93 Ω 2.6 GHz 4 3 1 2 START : 100.000 000 MHz STOP : 3 100.000 000 MHz S22−FREQUENCY 1 : 44.955 Ω 17.123 Ω 10.901 nH 250 MHz 2 : 48.875 Ω –16.785 Ω 1 GHz 3 : 51.383 Ω 18.615 Ω 2.2 GHz 4 : 66.562 Ω 5.5 Ω 2.6 GHz 1 3 4 2 START : 10 100.000 000 MHz STOP Data Sheet PU10597EJ01V0DS : 3 100.000 000 MHz µPC3232TB S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html Data Sheet PU10597EJ01V0DS 11 µPC3232TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 12 Data Sheet PU10597EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPC3232TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC line. (4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10597EJ01V0DS 13 µPC3232TB • The information in this document is current as of May, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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M8E 02. 11-1 14 Data Sheet PU10597EJ01V0DS µPC3232TB For further information, please contact NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office TEL: +82-2-558-2120 FAX: +82-2-558-5209 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Compound Semiconductor Devices Division NEC Electronics Corporation URL: http://www.ncsd.necel.com/ 0604