DATA SHEET GaAs INTEGRATED CIRCUIT µPG2053K GaAs MMIC DBS 4 x 2 IF SWITCH MATRIX FEATURES • HIGH ISOLATION : ISL = 38 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • CONTROL VOLTAGE : VCONT (H) = +4.5 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.) • LOW INSERTION LOSS : LINS = 6.0 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V, ZO = 50 Ω • 20-PIN 4 × 4 mm SQUARE MICRO LEAD PACKAGE (20-pin plastic QFN (0.5 mm pitch)) APPLICATIONS • Direct Broadcast Satellite (DBS) • Switch Box • 4 × 2 switch matrix to L, S band applications ORDERING INFORMATION Part Number µPG2053K-E3 Package 20-pin plastic QFN Marking G2053 (0.5 mm pitch) Supplying Form • Embossed tape 12 mm wide • Pin 1 to 5 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2053K Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10503EJ01V0DS (1st edition) Date Published June 2004 CP(K) Printed in Japan NEC Compound Semiconductor Devices, Ltd. 2004 µPG2053K ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage VDD −1.0 to +6.0 V Control Voltage VCONT1 to 4 −1.0 to +6.0 V Note Total Power Dissipation Ptot 2 W Input Power Pin +10 dBm Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit VDD +4.5 +5.0 +5.5 V Control Voltage (H) VCONT (H) +4.5 +5.0 +5.5 V Control Voltage (L) VCONT (L) −0.5 0 +0.5 V Supply Voltage ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD = +5.0 V, VCONT = +5.0 V/0 V, Pin = 0 dBm, ZO = 50 Ω, each port, unless otherwise specified) Parameter MIN. TYP. MAX. Unit f = 0.95 to 2.15 GHz − 6.0 8.0 dB LINS (0.95 GHz) − LINS (2.15 GHz) − 0.5 1.5 dB ISL f = 0.95 to 2.15 GHz 35 38 − dB Output Return Loss RLout f = 0.95 to 2.15 GHz 10 15 − dB Note 2 ICONT VCONT = +5.0 V/0 V, non-RF − − 0.5 mA IDD VCONT = +5.0 V/0 V, non-RF − − 2.0 mA Insertion Loss LINS Insertion Loss Flatness Isolation D/U-ratio Control Current Symbol Note 1 Supply Current ∆LINS Test Conditions Notes 1. Isolation D/U-ratio = (Signal leakage (off-state)) − (Insertion loss (on-state)) 2. Per 1 control pin 2 Data Sheet PG10503EJ01V0DS µPG2053K PIN CONNECTIONS (Top View) (GND) 5 4 3 2 1 6 7 8 9 10 (GND) Pin No. Pin Name Pin No. Pin Name 1 VCONT1 11 VCONT4 2 N.C. 12 IN-C 3 GND 13 GND 6 7 8 9 10 4 IN-A 14 N.C. 5 VCONT2 15 VCONT3 6 IN-B 16 OUT2 7 GND 17 GND (GND) 8 VDD 18 N.C. 9 GND 19 GND 10 IN-D 20 OUT1 (Bottom View) (GND) (GND) 20 19 18 17 16 20 19 18 17 16 (GND) (GND) 11 12 13 14 15 1 2 3 4 5 GND (GND) 15 14 13 12 11 Remark N.C. : Non Connection Data Sheet PG10503EJ01V0DS 3 µPG2053K TRUTH TABLE State ON CHANNEL CONTROL PINS OUT1 OUT2 VCONT1 VCONT2 VCONT3 VCONT4 IN-A IN-A Low Low Low Low 2 IN-B Low Low Low High 3 IN-C Low Low High Low 4 IN-D Low Low High High IN-A Low High Low Low 6 IN-B Low High Low High 7 IN-C Low High High Low 8 IN-D Low High High High IN-A High Low Low Low 10 IN-B High Low Low High 11 IN-C High Low High Low 12 IN-D High Low High High IN-A High High Low Low 14 IN-B High High Low High 15 IN-C High High High Low 16 IN-D High High High High 1 5 9 13 IN-B IN-C IN-D Remark High : +5 Vdc, Low : 0 Vdc. VCONT1 N.C. GND IN-A VCONT2 FUNCTIONAL DIAGRAM GND GND IN-B 4 : 16 DECODER OUT1 GND VDD GND IN-D N.C. GND OUT2 GND VCONT3 N.C. GND IN-C VCONT4 GND 4 GND Data Sheet PG10503EJ01V0DS µPG2053K VCONT1 IN-A VCONT2 EVALUATION CIRCUIT (VDD = +5.0 V, VCONT = +5.0 V/0 V, ZO = 50 Ω) 56 Ω 56 Ω GND 1 000 pF IN-B 56 pF 1 000 pF N.C. DC Blocking Capacitor C = 56 pF GND GND OUT1 1 000 pF GND 56 Ω GND VDD 56 pF N.C. GND GND OUT2 IN-D 56 pF DC Blocking Capacitor GND C = 56 pF 1 000 pF N.C. GND GND 1 000 pF 56 pF 56 Ω VCONT3 IN-C VCONT4 56 Ω Back Side : GND The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PG10503EJ01V0DS 5 µPG2053K TYPICAL CHARACTERISTICS (TA = +25°C, VDD = +5.0 V, VCONT = +5.0 V/0 V, Pin = 0 dBm, ZO = 50 Ω, unless otherwise specified) SIGNAL LEAKAGE vs. FREQUENCY 0 –1 –10 –2 –20 –3 SIGNAL LEAKAGE (dB) Insertion Loss LINS (dB) INSERTION LOSS vs. FREQUENCY 0 Other mode –4 –5 –6 –7 On channel mode : AA, BB, CC,DD –8 –40 –50 –60 –70 –80 –9 –90 –10 0 –100 0 0.5 1.0 1.5 2.0 2.5 3.0 1.0 1.5 2.0 2.5 3.0 Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 0 Output Return Loss RLout (dB) –5 Input selected –10 –15 –20 –25 –30 Input deselected –35 –40 –45 –50 0 0.5 1.0 1.5 2.0 2.5 3.0 –5 –10 –15 –20 –25 –30 –35 –40 –45 –50 0 Frequency f (GHz) 0.5 1.0 1.5 2.0 Frequency f (GHz) Remark The graphs indicate nominal characteristics. 6 0.5 Frequency f (GHz) 0 Input Return Loss RLin (dB) –30 Data Sheet PG10503EJ01V0DS 2.5 3.0 µPG2053K INSERTION LOSS vs. ON CHANNEL MODE INSERTION LOSS vs. ON CHANNEL MODE –3.0 –3.0 f = 1.5 GHz –4.0 Insertion Loss LINS (dB) Insertion Loss LINS (dB) f = 0.95 GHz –5.0 –6.0 –7.0 –4.0 –5.0 –6.0 –7.0 –8.0 –8.0 AA AB AC AD BA BB BC BD CA CB CC CD DA DB DC DD AA AB AC AD BA BB BC BD CA CB CC CD DA DB DC DD ON CHANNEL MODE ON CHANNEL MODE INSERTION LOSS vs. ON CHANNEL MODE ISOLATION D/U-RATIO vs. ON CHANNEL MODE –30 –3.0 f = 0.95 GHz Isolation D/U-Ratio ISL (dB) Insertion Loss LINS (dB) f = 2.15 GHz –4.0 –5.0 –6.0 –7.0 –35 –40 –45 –50 –55 –60 –8.0 AA AB AC AD BA BB BC BD CA CB CC CD DA DB DC DD AA AB AC AD BA BB BC BD CA CB CC CD DA DB DC DD ON CHANNEL MODE ON CHANNEL MODE ISOLATION D/U-RATIO vs. ON CHANNEL MODE ISOLATION D/U-RATIO vs. ON CHANNEL MODE –30 –30 f = 2.15 GHz Isolation D/U-Ratio ISL (dB) Isolation D/U-Ratio ISL (dB) f = 1.5 GHz –35 –40 –45 –50 –55 –60 –35 –40 –45 –50 –55 –60 AA AB AC AD BA BB BC BD CA CB CC CD DA DB DC DD AA AB AC AD BA BB BC BD CA CB CC CD DA DB DC DD ON CHANNEL MODE ON CHANNEL MODE Remark The graphs indicate nominal characteristics. Data Sheet PG10503EJ01V0DS 7 µPG2053K ISOLATION D/U-RATIO vs. OPERATING AMBIENT TEMPERATURE ISOLATION D/U-RATIO vs. OPERATING AMBIENT TEMPERATURE –30 –30 Isolation D/U-Ratio ISL (dB) –35 –40 –45 –50 –55 –60 –40 –30 –20 –10 0 –35 –40 –45 –50 –55 –60 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 Operating Ambient Temperature TA (˚C) ISOLATION D/U-RATIO vs. OPERATING AMBIENT TEMPERATURE OUTPUT POWER, IM3 vs. INPUT POWER f = 2.15 GHz –35 –40 –45 –50 –55 40 20 OIP3 = +30 dBm 0 Pout –20 –40 IM3 –60 –80 –100 –60 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 –120 –10 Operating Ambient Temperature TA (˚C) Remark The graphs indicate nominal characteristics. 8 10 20 30 40 50 60 70 80 90 Operating Ambient Temperature TA (˚C) –30 Isolation D/U-Ratio ISL (dB) f = 1.5 GHz Output Power Pout (dBm) 3rd Order Intermoduration Distortion IM3 (dBc) Isolation D/U-Ratio ISL (dB) f = 0.95 GHz Data Sheet PG10503EJ01V0DS freq1 = 2.150 GHz freq2 = 2.151 GHz 0 10 20 30 Input Power Pin (dBm) 40 50 µPG2053K PACKAGE DIMENSIONS 20-PIN 4 × 4 mm SQUARE MICRO LEAD PACKAGE (20-PIN QFN (0.5 mm pitch)) (UNIT: mm) (Top View) (Side View) 4.15±0.15 0.9±0.1 3.80±0.1 0.01+0.04 –0.01 Pin 1 Identifier 3.80±0.1 (Bottom View) 0.23+0.07 –0.05 0.6 MAX. Pin 1 1.9 1.9 0.6 MAX. Pin 1 Identifier 45 0. 0. 20 0.45+0.2 –0.1 4.15±0.15 Pin 1 0.50 Data Sheet PG10503EJ01V0DS 9 µPG2053K RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). 10 Data Sheet PG10503EJ01V0DS IR260 HS350 µPG2053K • The information in this document is current as of June, 2004. The information is subject to change without notice. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PG10503EJ01V0DS 11 µPG2053K Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. 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