APT1003RKLL
1000V 4A 3.00Ω
POWER MOS 7
R
MOSFET
TO-220
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
D
S
D
• Increased Power Dissipation
• Easier To Drive
• TO-220 Package
MAXIMUM RATINGS
Symbol
G
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT1003RKLL
UNIT
1000
Volts
Drain-Source Voltage
4
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
139
Watts
Linear Derating Factor
1.11
W/°C
PD
TJ,TSTG
16
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
4
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
10
4
mJ
425
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1000
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 2A)
TYP
MAX
Volts
3.00
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
1-2004
Characteristic / Test Conditions
050-7118 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT1003RKLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
135
Reverse Transfer Capacitance
f = 1 MHz
25
VGS = 10V
34
VDD = 500V
5
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 4A @ 25°C
td(off)
tf
4
VDD = 500V
ID = 4A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
10
INDUCTIVE SWITCHING @ 25°C
6
13
VDD = 667V, VGS = 15V
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ID = 4A, RG = 5Ω
42
INDUCTIVE SWITCHING @ 125°C
6
ns
25
RG = 1.6Ω
Fall Time
nC
8
VGS = 15V
Turn-off Delay Time
pF
22
RESISTIVE SWITCHING
Rise Time
UNIT
694
VGS = 0V
3
MAX
µJ
40
VDD = 667V, VGS = 15V
ID = 4A, RG = 5Ω
48
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
4
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID4A, dl S /dt = 100A/µs)
560
ns
Q
Reverse Recovery Charge (IS = -ID4A, dl S/dt = 100A/µs)
3.2
µC
rr
dv/
dt
Peak Diode Recovery
dv/
16
(Body Diode)
1.3
(VGS = 0V, IS = -ID4A)
dt
5
Amps
Volts
10
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.90
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 53.13mH, RG = 25Ω, Peak IL = 4A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID4A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.7
0.60
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7118 Rev A
1-2004
1.0
0.80
0.40
0.3
t1
t2
SINGLE PULSE
0.20
0.1
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
10-4
°C/W
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT1003RKLL
10
RC MODEL
Junction
temp. (°C)
0.386
0.00336F
Power
(watts)
0.508
0.0903F
ID, DRAIN CURRENT (AMPERES)
VGS =15 & 10V
7.5V
7V
8
6.5V
6
6V
4
5.5V
2
5V
Case temperature. (°C)
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
12
TJ = -55°C
10
8
6
TJ = +25°C
4
2
TJ = +125°C
0
0
1
2
3
4
5
6
7
8
9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
3.5
3
2.5
2
1.5
1
0.5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
GS
1.30
VGS=10V
1.20
1.10
VGS=20V
1.00
0.90
0.80
0
1
2 3
4 5 6
7
8 9 10
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
2.5
I
D
V
GS
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 2A
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
NORMALIZED TO
V
= 10V @ 2A
1.15
4
0.0
-50
1.40
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1-2004
14
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-7118 Rev A
ID, DRAIN CURRENT (AMPERES)
16
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
APT1003RKLL
16
10
5
1,000
100µS
1
1mS
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
4,000
OPERATION HERE
LIMITED BY RDS (ON)
Crss
= 4A
VDS= 200V
12
VDS= 500V
8
VDS= 800V
4
0
0
5
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
D
Coss
100
10mS
.1
I
Ciss
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
70
25
td(off)
V
G
60
= 667V
= 5Ω
T = 125°C
J
20
L = 100µH
50
V
15
DD
R
G
= 667V
tr and tf (ns)
td(on) and td(off) (ns)
DD
R
= 5Ω
T = 125°C
J
L = 100µH
10
tf
40
30
20
5
10
td(on)
0
0
90
1
4
5
6
7
8
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
80
G
2
3
140
= 667V
SWITCHING ENERGY (µJ)
V
120
Eoff
J
1-2004
1
I
L = 100µH
EON includes
60
4
5
6
7
8
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
= 5Ω
T = 125°C
70
0
diode reverse recovery.
50
40
30
Eon
20
DD
D
2
3
= 667V
= 4A
T = 125°C
J
SWITCHING ENERGY (µJ)
0
050-7118 Rev A
tr
L = 100µH
EON includes
100
Eon
diode reverse recovery.
80
60
Eoff
40
20
10
0
0
0
1
2
3
4
5
6
7
8
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT1003RKLL
10%
90%
Gate Voltage
Gate Voltage
TJ125°C
TJ125°C
td(off)
td(on)
Drain Voltage
Drain Current
tr
90%
5%
10%
5%
0
90%
tf
Drain Voltage
10%
Drain Current
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DF100
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-220AC Package Outline
1.39 (.055)
0.51 (.020)
Drain
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
16.51 (.650)
14.23 (.560)
4.08 (.161) Dia.
3.54 (.139)
3.42 (.135)
2.54 (.100)
6.35 (.250)
MAX.
Gate
Drain
Source
1.01 (.040) 3-Plcs.
0.38 (.015)
4.82 (.190)
3.56 (.140)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
1.77 (.070) 3-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
1-2004
2.92 (.115)
2.04 (.080)
14.73 (.580)
12.70 (.500)
050-7118 Rev A
0.50 (.020)
0.41 (.016)