NJRC NJG1138HA8

NJG1138HA8
900MHz Band LNA GaAs MMIC
! GENERAL DESCRIPTION
The NJG1138HA8 is a low noise amplifier designed for band 5/6/8 UMTS
cellular phone and cellular data modem. The NJG1138HA8 has two gain
state which are high gain mode and low gain mode. The NJG1138HA8
features high gain, low noise figure and high IP3.
An Ultra-small and thin USB6-A8 package is adopted.
! FEATURES
"Low operating voltage
"Low control voltage
"Low current consumption
"High gain
"Low noise figure
"Input power at 1dB gain compression point
"High input IP3
"Small package size
"Lead-free and halogen-free
! PACKAGE OUTLINE
NJG1138HA8
+2.8V typ.
+1.8V typ.
2.3mA typ.
@VCTL=1.8V
10μA typ.
@VCTL=0V
16.0dB typ.
@VCTL=1.8V, fRF =942.5MHz
1.4dB typ.
@VCTL=1.8V, fRF =942.5MHz
-8.5dBm typ. @VCTL=1.8V, fRF =942.5MHz
+16.0dBm typ. @VCTL=0V, fRF=942.5MHz
0dBm typ.
@VCTL=1.8V, fRF =942.5MHz
+14dBm typ. @VCTL=0V, fRF=942.5MHz
USB6-A8
(Package size: 1.0mmx1.2mmx0.38mm typ.)
! PIN CONFIGURATION
3
GND
RFOUT
RFIN
4
13
2
Bias
Circuit
GND
5
Logic
VCTL
Circuit
1
NC(GND)
Pin Connection
1. VCTL
2. RFOUT
3. GND
4. RFIN
5. GND
6. NC (GND)
6
! TRUTH TABLE
“H”=VCTL(H), “L”=VCTL(L)
VCTL
H
L
LNA Mode
High Gain Mode
Low Gain Mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2009-10-01
-1-
NJG1138HA8
! ABSOLUTE MAXIMUM RATINGS
Ta=+25°C, Zs=Zl=50Ω
PARAMETERS
SYMBOL
CONDITIONS
RATINGS
UNITS
Supply voltage
VDD
5.0
V
Control voltage
VCTL
5.0
V
Input power
PIN
+15
dBm
Power dissipation
PD
150
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
on PCB board, Tjmax=150°C
! ELECTRICAL CHARACTERISTICS 1 (DC)
PARAMETERS
Operating voltage
SYMBOL
(General Conditions: VDD=2.8V, Ta=+25oC)
CONDITIONS
VDD
MIN
TYP
MAX
UNITS
2.5
2.8
3.6
V
Control voltage (High)
VCTL(H)
VCTL terminal
1.36
1.8
3.6
V
Control voltage (Low)
VCTL(L)
VCTL terminal
0
0
0.3
V
IDD1
RF OFF, VCTL=1.8V
-
2.3
4.0
mA
IDD2
RFOFF, VCTL=0V
-
10
45
μA
ICTL
RF OFF, VCTL=1.8V
-
5.5
8.5
μA
Operating current1
(High Gain Mode)
Operating current2
(Low Gain Mode)
Control current
-2-
NJG1138HA8
! ELECTRICAL CHARACTERISTICS 2 (High Gain Mode)
(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 Ω, Ta=+25oC, with application circuit)
PARAMETERS
Small signal gain 1
Noise figure 1
Input power at 1dB gain
compression point 1
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Gain1
Exclude PCB and connector
losses
(input: 0.07dB, output: 0.07dB)
14.5
16.0
17.5
dB
NF1
Exclude PCB and connector
losses (input:0.07dB)
-
1.4
1.7
dB
-16.0
-8.5
-
dBm
-7.0
0
-
dBm
P-1dB(IN)1
3rd order Input
Intercept Point 1
IIP3_1
f1=fRF, f2=fRF+100kHz,
Pin=-30dBm
RF IN VSWR 1
VSWRI 1
-
1.8
2.3
-
RF OUT VSWR 1
VSWRo1
-
2.2
2.7
-
! ELECTRICAL CHARACTERISTICS 3 (Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 Ω, Ta=+25oC, with application circuit)
PARAMETERS
Small signal gain 2
Noise figure 2
Input power at 1dB gain
compression point 1
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Gain2
Exclude PCB and connector
losses
(input: 0.07dB, output: 0.07dB)
-4.5
-3.0
-2.0
dB
-
3.0
6.0
dB
+4.5
+16.0
-
dBm
+2.0
+14.0
-
dBm
NF2
Exclude PCB and connector
losses (input:0.07dB)
P-1dB(IN)2
3rd order Input
Intercept Point 2
IIP3_2
f1=fRF, f2=fRF+100kHz,
Pin=-20dBm
RF IN VSWR 2
VSWRI 2
-
1.4
2.0
-
RF OUT VSWR 2
VSWRo2
-
1.6
2.2
-
-3-
NJG1138HA8
! TERMINAL INFORMATION
No.
SYMBOL
DESCRIPTION
1
VCTL
Gain control port. Inputting a logic-high, the LNA turn at high gain mode.
Inputting a logic-low, the LNA turn at low gain mode.
2
RFOUT
RF output terminal. Requires an external matching components. This
terminal should be connected a DC blocking capacitor C1.
3
GND
Ground terminal. Connect to the PCB ground plane.
4
RFIN
RF input terminal. Requires an external matching components.
5
GND
Ground terminal. Connect to the PCB ground plane.
6
NC
(GND)
No connected terminal. This terminal is not connected with internal circuit.
Connect to the PCB ground plane.
Notes: Ground terminal (No.3 and 5) and NC terminal (No.6) should be connected with the PCB ground
for good RF performance.
-4-
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (High Gain Mode)
(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 Ω, Ta=+25oC, with application circuit)
Pout vs. Pin
Gain, IDD vs. Pin
(f=942.5MHz)
(f=942.5MHz)
10
10
20
Gain
5
15
8
10
6
5
4
-5
-10
Pout
IDD (mA)
Gain (dB)
Pout (dBm)
0
IDD
-15
2
0
-20
P-1dB(IN)=-7.7dBm
-25
-40
-30
-20
P-1dB(IN)=-7.7dBm
-10
0
0
-5
-40
10
-30
-20
Pin (dBm)
-10
0
10
Pin (dBm)
OIP3, IIP3 vs. frequency
Pout, IM3 vs. Pin
(f1=900~1000MHz, f2=f1+100kHz, Pin=-30dBm)
(f1=942.5MHz, f2=f1+100kHz)
20
18
6
17
5
16
4
OIP3 (dBm)
Pout, IM3 (dBm)
Pout
-20
-40
-60
OIP3
15
3
14
2
13
1
IIP3
12
IM3
IIP3 (dBm)
0
0
-80
-1
11
IIP3=-0.4dBm
-100
-40
-30
-20
-10
0
10
900
10
Pin (dBm)
960
980
-2
1000
k factor vs. frequency
(f=50MHz~20GHz)
(f=800~1100MHz)
4
20
3.5
18
15
14
2
12
10
1
8
0.5
6
k factor
16
2.5
NF
20
Gain (dB)
Gain
3
NF (dB)
940
frequency (MHz)
NF, Gain vs. frequency
1.5
920
10
5
(Exclude PCB, Connector Losses)
0
800
850
900
950
1000
frequency (MHz)
1050
4
1100
0
0
5
10
15
20
frequency (GHz)
-5-
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (High Gain Mode)
(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 Ω, Ta=+25oC, with application circuit)
Gain, NF vs. VDD
P-1dB(IN) vs. VDD
(f=942.5MHz)
17
3.5
-3
3
-4
Gain
15
2.5
14
2
13
NF
1.5
1
12
P-1dB(IN) (dBm)
-2
NF (dB)
4
16
Gain (dB)
(f=942.5MHz)
18
-6
P-1dB(IN)
-7
-8
0.5
11
-5
-9
(Exclude PCB, Connector Losses)
10
2
2.5
3
3.5
4
0
4.5
-10
2
2.5
3
3.5
4
VDD (V)
VDD (V)
OIP3, IIP3 vs. VDD
(f1=942.5MHz, f2=f1+100kHz, Pin=-30dBm)
VSWRi, VSWRo vs. VDD
4.5
(f=942.5MHz)
19
5
4
18
4
3.5
17
3
3
2
OIP3
1
15
14
0
IIP3
2
1.5
-1
1
12
-2
0.5
-3
4.5
0
2
2.5
3
3.5
4
VDD (V)
(RF OFF)
4
3.5
3
2.5
IDD
2
1.5
1
0.5
0
2
2.5
3
VSWRi
2
2.5
3
3.5
VDD (V)
IDD vs. VDD
IDD (mA)
2.5
13
11
3.5
VDD (V)
-6-
VSWRi, VSWRo
16
IIP3 (dBm)
OIP3 (dBm)
VSWRo
4
4.5
4
4.5
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (High Gain Mode)
(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 Ω, with application circuit)
P-1dB(IN) vs. Temperature
Gain, NF vs. Temperature
(f=942.5MHz)
(f=942.5MHz)
19
4
18
3.5
-2
3
-4
16
2.5
15
2
14
NF
13
12
1.5
P-1dB(IN) (dBm)
Gain
NF (dB)
Gain (dB)
17
0
P-1dB(IN)
-6
-8
-10
1
-12
0.5
-14
(Exclude PCB, Connector Losses)
11
-60
-40
-20
0
20
40
o
60
80
0
100
-16
-60
-40
-20
0
20
40
60
80
100
Temperature (oC)
VSWRi, VSWRo vs. Temperature
Temperature ( C)
OIP3, IIP3 vs. Temperature
(f=942.5MHz)
(f1=942.5MHz, f2=f1+100kHz, Pin=-30dBm)
18
4
4
17
3
3.5
16
2
3
1
14
0
13
-1
IIP3
12
11
10
-60
-40
-20
0
20
40
o
60
80
VSWRi, VSWRo
OIP3
15
IIP3 (dBm)
OIP3 (dBm)
VSWRo
2.5
2
-2
1
-3
0.5
-4
100
VSWRi
1.5
0
-60
-40
-20
0
20
40
60
80
100
Temperature (oC)
Temperature ( C)
IDD vs. Temperature
(RF OFF)
4
3.5
IDD (mA)
3
2.5
IDD
2
1.5
1
0.5
0
-60
-40
-20
0
20
40
o
60
80
100
Temperature ( C)
-7-
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (High Gain Mode)
(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 Ω, Ta=+25oC, with application circuit)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22
(f=50MHz~20GHz)
-8-
S21, S12
(f=50MHz~20GHz)
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 Ω, Ta=+25oC, with application circuit)
Pout vs. Pin
Gain, IDD vs. Pin
(f=942.5MHz)
(f=942.5MHz)
20
240
-2
Gain
10
-4
200
-6
160
-8
120
-10
80
-10
-20
IDD (uA)
Gain (dB)
Pout (dBm)
0
Pout
-30
40
-12
-40
P-1dB(IN)=+16.1dBm
IDD
P-1dB(IN)=+16.1dBm
-30
-20
-10
0
10
0
-14
-40
20
-30
-20
0
10
20
Pin (dBm)
Pout, IM3 vs. Pin
OIP3, IIP3 vs. Pin
(f1=942.5MHz, f2=f1+100kHz)
(f1=900~1000MHz, f2=f1+100kHz, Pin=-20dBm)
20
16
0
14
-20
OIP3 (dBm)
Pout, IM3 (dBm)
Pin (dBm)
-10
Pout
-40
-60
24
22
OIP3
12
20
10
18
8
16
IIP3 (dBm)
-50
-40
IIP3
-80
14
6
IM3
IIP3=+16.7dBm
-100
-40
-30
-20
-10
0
10
4
900
20
Pin (dBm)
10
980
12
1000
20
-2
6
-4
-6
-8
NF
2
-10
15
k factor
Gain
Gain (dB)
NF (dB)
960
(f=50MHz~20GHz)
(f=800~1100MHz)
4
940
frequency (MHz)
k factor vs. frequency
NF, Gain vs. frequency
8
920
10
5
(Exclude PCB, Connector Losses)
0
800
850
900
950
1000
frequency (MHz)
1050
-12
1100
0
0
5
10
15
20
frequency (GHz)
-9-
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 Ω, Ta=+25oC, with application circuit)
Gain, NF vs. VDD
P-1dB(IN) vs. VDD
(f=942.5MHz)
1
5
19
4
18
NF
-1
3
-2
2
1
-3
Gain
0
-4
-5
P-1dB(IN) (dBm)
20
NF (dB)
6
0
Gain (dB)
(f=942.5MHz)
2
17
P-1dB(IN)
16
15
14
-1
13
-2
4.5
12
(Exclude PCB, Connector Losses)
-6
2
2.5
3
3.5
4
2
2.5
VDD (V)
18
3.5
16
3
OIP3 (dBm)
20
IIP3
18
14
16
12
OIP3
2
1.5
10
12
8
1
10
6
0.5
4
4.5
0
3.5
4
IDD vs. VDD
(RF OFF)
18
16
14
12
IDD
8
6
4
2
2.5
3
3.5
VDD (V)
- 10 -
VSWRi
2
2.5
3
3.5
VDD (V)
VDD (V)
2
VSWRo
2.5
14
8
IDD (uA)
VSWRi, VSWRo
22
IIP3 (dBm)
4
10
4.5
(f=942.5MHz)
20
3
4
VSWRi, VSWRo vs. VDD
24
2.5
3.5
VDD (V)
OIP3, IIP3 vs. VDD
(f1=942.5MHz, f2=f1+100kHz, Pin=-20dBm)
2
3
4
4.5
4
4.5
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 Ω, with application circuit)
P-1dB(IN) vs. Temperature
Gain, NF vs. Temperature
(f=942.5MHz)
(f=942.5MHz)
22
-2
8
20
7
18
Gain
Gain (dB)
-3
-4
6
-5
5
-6
4
NF
-7
-8
P-1dB(IN) (dBm)
9
NF (dB)
-1
16
P-1dB(IN)
14
12
3
10
2
8
(Exclude PCB, Connector Losses)
-9
-60
-40
-20
0
20
40
o
60
80
6
-60
1
100
-40
-20
0
Temperature ( C)
22
18
3.5
20
16
3
IIP3
14
12
16
OIP3
10
VSWRi, VSWRo
4
IIP3 (dBm)
OIP3 (dBm)
20
VSWRi
10
6
0.5
1
0
20
40
o
60
80
4
100
VSWRo
1.5
1
-20
100
2
8
-40
80
2.5
12
8
-60
60
(f=942.5MHz)
24
14
40
VSWRi, VSWRo vs. Temperature
OIP3, IIP3 vs. Temperature
(f1=942.5MHz, f2=f1+100kHz, Pin=-20dBm)
18
20
Temperature (oC)
0
-60
-40
-20
0
20
40
o
60
80
100
Temperature ( C)
Temperature ( C)
IDD vs. Temperature
(RF OFF)
18
16
14
IDD (uA)
12
10
IDD
8
6
4
2
-60
-40
-20
0
20
40
60
80
100
Temperature (oC)
- 11 -
NJG1138HA8
! ELECTRICAL CHARACTERISTICS (Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 Ω, Ta=+25oC, with application circuit)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22
(f=50MHz~20GHz)
- 12 -
S21, S12
(f=50MHz~20GHz)
NJG1138HA8
! APPLICATION CIRCUIT
(Top View)
3 GND
RFIN
L2
8.2nH
RFIN
C1
2pF
RFOUT
13
4
RF OUT
2
L1
12nH
L3
10nH
Bias
Circuit
C2
0.01uF
Logic
Circuit
GND
VDD
VCTL
5
1
NC(GND)
VCTL
6
1Pin Index
! TEST PCB LAYOUT
(Top View)
Parts ID
L1, L2
VDD
L3
C2
RF IN
L2
L1
C1, C2
L3
Comments
Murata
LQP03T Series
TDK
MLK0603 Series
Murata
GRM03 Series
RF OUT
C1
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z0=50ohm)
PCB SIZE=17.0mm x 17.0mm
VCTL
- 13 -
NJG1138HA8
0.38±0.06
+0.012
0.038-0.009
! PACKAGE OUTLINE (USB6-A8)
0.03
0.2 (MIN0.15)
S
S
C0.1
R0.05
5
1
4
Photo resist coating
0.2±0.04
0.4
0.6
0.1±0.05
0.8
:Au
:Glass epoxy
:Epoxy resin
:mm
:1.1mg
0.2±0.04
6
1.2±0.05
TERMINAL TREAT
Substrate
Molding material
UNIT
WEIGHT
2
3
0.4
0.2±0.07
1.0±0.05
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
- 14 -
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.