NTE NTE28

NTE28
Germanium PNP Transistor
High Current, High Gain Amplifier
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +110°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V(BR)CEO IC = 1A, IB = 0, Note 1
45
−
−
V
V(BR)CES IC = 300mA, VBE = 0
60
−
−
V
OFF Characteristics
Collector−Emitter Breakdown Voltage
Floating Potential
VEBF
VCB = 60V, IE = 0
−
−
0.5
V
Collector Cutoff Current
ICEX
VCE = 45V, VBE(off) = 2V, TC = +71°C
−
−
15
mA
ICBO
VCB = 2V, IE = 0
−
−
0.2
mA
VCB = 60V, IE = 0
−
−
4.0
mA
VBE = 30V, IC = 0
−
−
4.0
mA
VBE = 30V, IC = 0, TC = +71°C
−
−
15
mA
IC = 15A, VCE = 2V
60
−
180
IC = 60A, VCE = 2V
15
−
−
IC = 15A, IB = 1A
−
−
0.15
V
IC = 60A, IB = 6A
−
−
0.3
V
IC = 15A, IB = 1A
−
−
0.6
V
IC = 60A, IB = 6A
−
−
1.0
V
IC = 15A, VCE = 2V
2
−
−
kHz
Emitter Cutoff Current
IEBO
ON Characteristics (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
Small−Signal Characteristics
Common−Emitter Cutoff Frequency
fαe
Note 1. To avoid excessive heating of the collector junction, perform test with pulse method.
1.250 (31.75
Dia Max
1.005 (25.55)
Dia Max
.500
(12.7)
Max
.500 (12.7)
Max
.710
(18.03)
Max
.312 (7.93)
10−32 UNF−2A
Emitter
.355
(9.04)
Max
Base
Collector/Case