NTE58 (NPN) & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Device Dissipation (TFL = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector–Emitter Breakdown Voltage Symbol Test Conditions V(BR)CEO IC = 50mA Min Typ Max Unit 200 – – V Maximum Collector Cutoff Current ICBO VCB = 200V, IE = 0 – – 0.1 mA Maximum Emitter Cutoff Current IEBO VEB = 6V, IC = 0 – – 0.1 mA DC Forward Current Transfer Ratio hFE VCE = 4V, IC = 8A 20 – – Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 1A – – 2.5 V Second Breakdown Collector Current IS/b VCE = 100V, t = 1sec 1 – – A VCE = 12V, IE = 1A – 20 – MHz Cutoff Frequency fT 1.430 (36.32) .961 (24.42) .843 (21.42) B C E .788 (20.02) Min .215 (5.48) .118 (3.0) .244 (6.2) Max Collector connected to Tab