BGA6289 MMIC wideband medium power amplifier Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description The BGA6289 is a silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal resistance SMD package. The BGA6x89 series of medium power gain blocks are resistive feedback Darlington configured amplifiers. Resistive feedback provides large bandwidth with high accuracy. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n n n n Broadband 50 Ω gain block 17 dBm power output SOT89 package Single supply voltage needed 1.3 Applications n n n n n n n n Broadband medium power gain blocks Small signal high linearity amplifiers Variable gain and high output power in combination with the BGA2031 Cellular, PCS and CDPD IF/RF buffer amplifier Wireless data SONET Oscillator amplifier, final PA Drivers for CATV amplifier BGA6289 NXP Semiconductors MMIC wideband medium power amplifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VD DC device voltage on pin 1; IS = 88 mA - 4.1 - V IS DC supply current VS = 8 V; Rbias = 47 Ω; Tj = 25 °C - 88 - mA |s21|2 insertion power gain f = 1.95 GHz - 13 - dB NF noise figure f = 1.95 GHz - 4 - dB PL1dB input power at 1 dB gain compression f = 850 MHz - 18 - dBm f = 1.95 GHz - 16 - dBm 2. Pinning information Table 2. Pinning Pin Description 1 RF_OUT/BIAS 2 GND 3 RF_IN Simplified outline Graphic symbol 3 1 2 3 2 sym130 1 3. Ordering information Table 3. Ordering information Type number BGA6289 Package Name Description Version SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 4. Marking Table 4. Marking codes Type number Marking code BGA6289 3A BGA6289_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 2 of 12 BGA6289 NXP Semiconductors MMIC wideband medium power amplifier 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VD DC device voltage on pin 1; RF input AC coupled - V IS DC supply current Ptot total power dissipation Tstg 6.0 - 150 mA - 800 mW storage temperature −65 +150 °C Tj junction temperature - 150 °C PD drive power - 15 dBm [1] Tsp ≤ 70 °C [1] Tsp is the temperature at the solder point of ground lead, pin 2. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Tsp ≤ 70 °C [1] Conditions [1] Typ Unit 100 K/W Tsp is the temperature at the solder point of ground lead, pin 2. 7. Characteristics Table 7. Static characteristics VS = 8 V; Tj = 25 °C; Rbias = 47 Ω[1] Symbol Parameter Conditions Min Typ Max Unit VD DC device voltage on pin 1; IS = 88 mA - 4.1 - V IS DC supply current 79 88 96 mA [1] VS = DC operating supply voltage applied to Rbias; see Figure 10 Table 8. Characteristics VS = 8 V; IS = 88 mA; Tamb = 25 °C; Rbias = 47 Ω; IP3(out) tone spacing = 1 MHz; PL = 0 dBm per tone; ZL = ZS = 50 Ω; unless otherwise specified; see Figure 10. Symbol Parameter Conditions Min Typ Max Unit |s21|2 f = 850 MHz - 15 - dB f = 1.95 GHz - 13 - dB f = 2.5 GHz - 12 - dB RLIN RLOUT insertion power gain input return loss output return loss f = 850 MHz - 11 - dB f = 1.95 GHz - 11 - dB f = 2.5 GHz - 14 - dB f = 850 MHz - 11 - dB f = 1.95 GHz - 14 - dB f = 2.5 GHz - 14 - dB BGA6289_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 3 of 12 BGA6289 NXP Semiconductors MMIC wideband medium power amplifier Table 8. Characteristics …continued VS = 8 V; IS = 88 mA; Tamb = 25 °C; Rbias = 47 Ω; IP3(out) tone spacing = 1 MHz; PL = 0 dBm per tone; ZL = ZS = 50 Ω; unless otherwise specified; see Figure 10. Symbol Parameter Conditions Min Typ Max Unit NF f = 850 MHz - 3.5 - dB K PL1dB IP3(in) IP3(out) noise figure f = 1.95 GHz - 3.7 - dB f = 2.5 GHz - 3.8 - dB f = 850 MHz - 1.3 - f = 2.5 GHz - 1.6 - output power at 1 dB gain compression f = 850 MHz - 17 - dBm f = 1.95 GHz - 15 - dBm input intercept point f = 850 MHz - 17 - dBm f = 2.5 GHz - 14 - dBm stability factor output intercept point f = 850 MHz - 31 - dBm f = 2.5 GHz - 25 - dBm 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 200 1 MHz 2 0.5 5 10 0° 0 2.6 GHz −5 −0.2 −135° −2 −0.5 −45° −1 −90° 1.0 mgx420 IS = 88 mA; VS = 8 V; PD = −30 dBm; ZO = 50 Ω. Fig 1. Input reflection coefficient (s11); typical values BGA6289_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 4 of 12 BGA6289 NXP Semiconductors MMIC wideband medium power amplifier 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 2.6 GHz 180° 0 0.2 0.2 1 0.5 2 5 10 0° 0 200 MHz −5 −0.2 −135° −2 −0.5 −45° −1 1.0 −90° mgx421 IS = 88 mA; VS = 8 V; PD = −30 dBm; ZO = 50 Ω. Fig 2. Output reflection coefficient (s22); typical values mgx423 25 |s21|2 (dB) 20 mgx422 0 |s12|2 (dB) −10 15 −20 10 −30 5 0 0 500 1000 1500 2000 2500 f (MHz) −40 IS = 88 mA; VS = 8 V; PD = −30 dBm; ZO = 50 Ω. Fig 3. Insertion gain (|s21|2) as a function of frequency; typical values 0 1000 1500 2000 2500 f (MHz) IS = 88 mA; VS = 8 V; PD = −30 dBm; ZO = 50 Ω. Fig 4. Isolation (|s12|2) as a function of frequency; typical values BGA6289_2 Product data sheet 500 © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 5 of 12 BGA6289 NXP Semiconductors MMIC wideband medium power amplifier mgx424 25 PL1dB (dBm) mgx425 40 IP3(out) (dBm) 20 30 15 20 10 10 5 0 0 0 500 1000 1500 2000 2500 f (MHz) 0 IS = 88 mA; VS = 8 V; ZO = 50 Ω. Fig 5. Fig 6. mgx427 1500 2000 2500 f (MHz) Output intercept point as a function of frequency; typical values mgx426 5 NF (dB) K 4 4 3 3 2 2 1 1 0 0 0 500 1000 1500 2000 2500 f (MHz) 0 IS = 88 mA; VS = 8 V; ZO = 50 Ω. Fig 7. 1000 IS = 88 mA; VS = 8 V; PL = 0 dBm; ZO = 50 Ω. Load power as a function of frequency; typical values 5 500 1000 1500 2000 2500 f (MHz) IS = 88 mA; VS = 8 V; ZO = 50 Ω. Stability factor as a function of frequency; typical values Fig 8. Noise figure as a function of frequency; typical values BGA6289_2 Product data sheet 500 © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 6 of 12 BGA6289 NXP Semiconductors MMIC wideband medium power amplifier mgx428 100 IS (mA) 90 80 70 60 −40 −20 20 0 40 60 80 Tj (°C) VS = 8 V; Rbias = 47 Ω. Fig 9. Supply current as a function of operating junction temperature; typical values 8. Application information Figure 10 shows a typical application circuit for the BGA6289 MMIC. The device is internally matched to 50 Ω, and therefore does not require any external matching. The value of the input and output DC blocking capacitors C1 and C2 depends on the operating frequency; see Table 9. Capacitors C1 and C2 are used in conjunction with L1 and C3 to fine tune the input and output impedance. Capacitor C4 is a supply decoupling capacitor. A 1 µF capacitor (C5) can be added for optimum supply decoupling. The external components should be placed as close as possible to the MMIC. When using via holes, use multiple via holes per pin in order to limit ground path induction. Resistor R1 is a bias resistor providing DC current stability with temperature. R1(2) VS C3 C4 C5(1) L1 50 Ω microstrip C1 1 3 VD C2 50 Ω microstrip 2 mgx419 (1) Optional capacitor for optimum supply decoupling. (2) R1 values at operating supply voltage: VS = 6 V; R1 = 22 Ω. VS = 8 V; R1 = 47 Ω. VS = 12 V; R1 = 91 Ω. Fig 10. Typical application circuit BGA6289_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 7 of 12 BGA6289 NXP Semiconductors MMIC wideband medium power amplifier Table 9. List of components See Figure 10 for circuit. Component Description Package 500 MHz 800 MHz 1950 MHz 2400 MHz 3500 MHz C1, C2 multilayer ceramic chip capacitor 0603 220 pF 100 pF 68 pF 56 pF 39 pF C3 multilayer ceramic chip capacitor 0603 100 pF 68 pF 22 pF 22 pF 15 pF C4 multilayer ceramic chip capacitor 0603 1 nF 1 nF 1 nF 1 nF 1 nF C5[1] electrolytic or tantalum capacitor 0603 1 µF 1 µF 1 µF 1 µF 1 µF L1 SMD inductor 0603 68 nH 33 nH 22 nH 18 nH 15 nH R1 SMD resistor 0.5 W; VS = 8 V - 47 Ω 47 Ω 47 Ω 47 Ω 47 Ω [1] Value at operating frequency Optional. Table 10. Scattering parameters IS = 88 mA; VS = 8 V; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C. f (MHz) s11 s21 s12 s22 K Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 800 0.327 −33.05 5.49 134.89 0.10 −11.30 0.29 −76.80 1.2 1000 0.28 −42.87 5.20 124.72 0.09 −12.71 0.28 −92.51 1.2 1200 0.29 −52.85 5.00 115.06 0.09 −13.51 0.27 −107.2 1.3 1400 0.29 −62.55 4.69 105.73 0.09 −13.66 0.25 −121.6 1.4 1600 0.29 −73.03 4.55 97.33 0.09 −13.18 0.23 −136.8 1.4 1800 0.28 −83.21 4.31 88.55 0.08 −12.17 0.21 −153.4 1.5 2000 0.26 −94.25 4.18 80.63 0.08 −12.11 0.19 −172.3 1.5 2200 0.24 −106.7 4.02 72.01 0.08 −10.45 0.18 166.36 1.5 2400 0.22 −120.4 3.91 63.83 0.08 −10.70 0.18 144.2 1.6 2600 0.19 −137.7 3.71 55.62 0.09 −10.65 0.20 122.13 1.2 BGA6289_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 8 of 12 BGA6289 NXP Semiconductors MMIC wideband medium power amplifier 9. Package outline Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION REFERENCES IEC SOT89 JEDEC JEITA TO-243 SC-62 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 Fig 11. Package outline SOT89 (SC-62) BGA6289_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 9 of 12 BGA6289 NXP Semiconductors MMIC wideband medium power amplifier 10. Abbreviations Table 11. Abbreviations Acronym Description CDPD Cellular Digital Packet Data IF Intermediate Frequency PCS Personal Communication Service SMD Surface Mount Device SONET Synchronous Optical NETwork 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BGA6289_2 20090615 Product data sheet - BGA6289_1 Modifications BGA6289_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Changed IS from 84 mA to 88 mA throughout. Table 1: changed symbol VS to VD. Table 5: changed symbol VS to VD and added “on pin 1;” to Conditions. Table 7: added row for VD DC device voltage. Section 8: added sentence. Figure 10: figure notes modified. Table 9: changed VS = 9 V to 8 V. Table 9: added 47 Ω to all value columns for resistor R1 and amended values of C3 and C4. 20030918 Product data sheet BGA6289_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 10 of 12 BGA6289 NXP Semiconductors MMIC wideband medium power amplifier 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BGA6289_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 15 June 2009 11 of 12 BGA6289 NXP Semiconductors MMIC wideband medium power amplifier 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 June 2009 Document identifier: BGA6289_2