TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5013S 2N5014S 2N5015S JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Value Unit 2N5010 500 Vdc 2N5011 600 Vdc 700 Vdc 2N5013 800 Vdc 2N5014 900 Vdc 2N5015 1000 Vdc 2N5010 500 Vdc 2N5011 600 Vdc 700 Vdc 2N5013 800 Vdc 2N5014 900 Vdc 2N5015 1000 Vdc VEBO 5 Vdc Collector Current IC 200 mAdc Base Current IB 20 mAdc Pt 1.0 7.0 W RθJC 20 °C/W Tj, Tstg -65 to +200 °C Collector-Emitter Voltage Symbol 2N5012 VCER Collector-Base Voltage 2N5012 TO-5 2N5010 thru 2N5015 VCBO Emitter-Base Voltage Total Power Dissipation @ TA = +25°C @ TC = +25° C Thermal Resistance, Junction to Case 1/ Operating & Storage Junction Temperature Range TO-39 2N5010S thru 2N5015S Note: 1/ See 19500/727 for Thermal Derating Curves. T4-LDS-0067 Rev. 1 (082021) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Collector to Base Cutoff Current VCB = 400V VCB = 500V VCB = 580V VCB = 650V VCB = 700V VCB = 760V 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 VCB = 400V VCB = 500V VCB = 588V VCB = 650V VCB = 700V VCB = 760V @ TA = +150°C 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 Emitter to Base Cutoff Current VEB = 4V Collector to Base Breakdown Voltage IC = 0.1mAdc IC = 0.1mAdc IC = 0.1mAdc IC = 0.2mAdc IC = 0.2mAdc IC = 0.2mAdc Emitter to Base Breakdown Voltage IC = 0mA IE = 0.05mA Collector to Emitter Breakdown Voltage RBE = 1KΩ IC = 0.2mA, Pulsed Forward-Current Transfer Ratio IC = 25mA IC = 20mA VCE = 10V 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 VCE = 10V IC = 5mA VCE = 10V IC = 20mA T4-LDS-0067 Rev. 1 (082021) @ TA = -55°C Symbol Min. Max. Unit ICBO1 10 10 10 10 10 10 nAdc nAdc nAdc nAdc nAdc nAdc ICBO2 10 10 10 10 10 10 uAdc uAdc uAdc uAdc uAdc uAdc IEBO 20 uAdc V(BR)CBO 500 600 700 800 900 1000 Vdc Vdc Vdc Vdc Vdc Vdc V(BR)EBO 5 Vdc V(BR)CER 500 600 700 800 900 1000 Vdc Vdc Vdc Vdc Vdc Vdc hFE1 30 30 hFE2 10 hFE3 10 180 180 Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.) Parameters / Test Conditions Base-Emitter Saturation Voltage IC = 25mA IC = 20mA IB = 5mA, Pulsed 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 Symbol Min. Max. Unit VBE(SAT) 1.0 1.0 Vdc Vdc VCE(SAT) 1.4 1.5 1.6 1.6 1.6 1.8 Vdc Vdc Vdc Vdc Vdc Vdc Max. Unit 30 pF Collector-Emitter Saturation Voltage IC = 25mA IC = 25mA IC = 25mA IC = 20mA IC = 20mA IC = 20mA IB = 5mA, Pulsed 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. |hfe| 1.0 1.0 Magnitude of small signal short-circuit forward current transfer ratio VCE = 10Vdc, IC = 25mA, f = 10MHz VCE = 10Vdc, IC = 20mA, f = 10MHz 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 Open circuit output capacitance VCB = 10V, IE = 0, f = 2MHz T4-LDS-0067 Rev. 1 (082021) Cobo Page 3 of 3