TECHNICAL DATA SILICON NPN TRANSISTOR Devices 10 AMP 100 V 2N6232 • • FAST SWITCHING LOW SATURATION VOLTAGE MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak (1) Base Current – Continuous Total Power Dissipation @ TC = 250C Operating & Storage Junction Temperature Range Symbol Value Units VCEO VCBO VEBO IC IB PD 100 140 7.0 10 1.25 TJ, Tstg -65 to +200 Vdc Vdc Vdc Adc Adc W W/0C 0 C Symbol Max. 6.67 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case RθJC TO-5 Unit C/W 0 (1) Pulse Test: Pulse Width = Duty Cycle < % ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. VCEO(sus) 100 Max. Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (2) IC = 100 mAdc, IB = 0 Collector-Emitter Cutoff Current VCE = 140 Vdc, Rbe = 0 Collector Cutoff Current VCE = 100 Vdc, RBE = 0 Ω, TC = 1500C Emitter-Base Cutoff Current VEB = 7.0 Vdc, IC = 0 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Vdc ICES 0.2 uAdc ICES 0.1 mAdc IEBO 10 uAdc 10604 Page 1 of 2 2N6232 ELECTRICAL CHARACTERISTICS (con’t) Characteristics ON CHARACTERISTICS (2) DC Current Gain IC = 5.0 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 5 Adc, IB = .5 Adc Base-Emitter Saturation Voltage IC = 10 Adc, IB = 1.0 Adc Symbol Min. Max. hFE 25 100 Unit VCE(sat) 0.7 Vdc VBE(ON) 1.8 Vdc Cobo 150 PF 250 1200 ns ns DYNAMIC CHARACTERISTICS Output Capacitance VCB = 10 Vdc, IE = 0, f = 1.0 MHz SWITCHING CHARACTERISTICS IC = 5.0 Adc, IB1= Ib2 = 0.5 A Duty Cycle – 2.0% (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 t t on off 10604 Page 2 of 2