STB3015L STP3015L ® N - CHANNEL 30V - 0.013 Ω - 40A - D2PAK/TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STB3015L 30 V < 0.0155 Ω 40 A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 3 D2PAK TO-263 1 TO-220 (Suffix "T4") DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 2 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ■ ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Parameter Value Unit Drain-source Voltage (V GS = 0) 30 V Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 20 V 40 A Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C ID o I DM (•) Ptot Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor dv/dt( 1 ) T stg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area July 1998 28 A 160 A 80 W 0.53 W/ o C 7 V/ns -65 to 175 o C 175 o C (1) ISD ≤ 40 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/5 STB3015L THERMAL DATA R thj-case R thj-amb R thc-sink Tl o 1.88 62.5 0.5 300 Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 15 V) Max Value Unit 40 A 200 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 30 VGS = 0 Unit V o T c = 125 C V GS = ± 20 V 1 10 µA µA ± 100 nA Max. Unit 2.5 V 0.0155 0.022 Ω Ω ON (∗) Symbol Parameter Test Conditions ID = 250 µA V GS(th) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On Resistance V GS = 10 V I D = 20 A V GS = 5 V I D = 20 A ID(on) Min. Typ. 1 0.013 On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 40 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =20 A V GS = 0 Min. Typ. 15 20 Max. Unit S 2500 1200 400 pF pF pF STB3015L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Parameter Test Conditions Turn-on Time Rise Time V DD = 15 V R G = 4.7 Ω Total Gate Charge V DD = 24 V Min. I D = 20 A V GS = 5 V I D = 40 A Typ. Max. 25 160 V GS = 5 V Unit ns ns 40 nC Max. Unit SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 24 V R G = 4.7 Ω Min. I D = 40 A V GS = 5 V Typ. ns ns ns 25 120 155 SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 40 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 40 A V DD = 20 V t rr Q rr I RRM Min. Typ. VGS = 0 di/dt = 100 A/µs T j = 150 o C Max. Unit 40 160 A A 1.3 V 50 ns 0.9 nC 3.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STB3015L TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 E A C2 L2 D L L3 B2 B A1 C G P011P6/C 4/5 STB3015L TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 5/5 STB3015L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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