HE8807SG/FL ODE-208-050 (Z) Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1 Package Type • HE8807FL: FL High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability Internal Circuit 1 2 Absolute Maximum Ratings (TC = 25°C) Item Symbol Forward current Reverse voltage IF VR Operating temperature Storage temperature Topr Tstg Ratings Unit 200 3 mA V –20 to +85 –40 to +100 °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Symbol PO Min 10 Typ 20 Max — Unit mW Test Conditions IF = 150 mA Peak wavelength Pf * λp 0.5 800 1.0 880 — 900 nm IF = 20 mA IF = 150 mA Spectral width Forward voltage ∆λ VF — — 30 1.7 60 2.3 nm V IF = 150 mA IF = 150 mA Reverse current Capacitance IR Ct — — — 10 100 — µA pF VR = 3 V VR = 0 V, f = 1 MHz Rise time Fall time tr tf — — 20 20 — — ns ns IF = 50 mA IF = 50 mA HE8807SG HE8807FL Note: Pf specification: The optical output within 9 degrees of the acceptance angle. Rev.0 Oct. 30, 2006 page 1 of 5 HE8807SG/FL 10 5 0 50 100 150 Forward current, IF (mA) TC = 60°C 150 25°C -20°C 100 50 0 200 0.5 1.5 1.0 2.0 Forward voltage, VF (V) ( °) Radiation Directional (HE8807SG) 0 100 TC = 25°C 30 An gl e, θ 80 60 60 40 20 90 100 40 60 80 Angle, θ ( ° ) 0 Radiation Directional (HE8807FL) 0 100 30 TC = 25°C 80 An gl e, θ ( °) 20 0 80 60 40 20 Relative radiation intensity (%) 60 60 40 20 90 100 0 20 80 60 40 20 Relative radiation intensity (%) 40 60 80 Angle, θ ( ° ) 0 Relative radiation intensity (%) 15 C 0° 5°C °C 2 40 C 6 0° 80°C Relative radiation intensity (%) C = 20 Forward Current vs. Forward Voltage 200 Forward current, IF (mA) -2 0° C Optical Output Power vs. Forward Current (HE8807SG) 25 T Optical output power, PO (mW) Typical Characteristic Curves Relative optical output power (%) Relative Optical Output Power vs. Distance TC = 25°C 100 D.U.T. Photo detector 50 FL L 20 10 1 2 Rev.0 Oct. 30, 2006 page 2 of 5 5 10 20 50 Distance, L (mm) 100 2.5 HE8807SG/FL Package Dimensions As of July, 2002 2 Ð φ 0.45 ± 0.1 1 14 ± 2 0.55 ± 0.2 2.7 ± 0.2 φ 5.4 ± 0.2 φ 4.65 ± 0.2 φ 4.0 ± 0.2 0.65 ± 0.2 Unit: mm 2 2.54 ± 0.35 (2 – φ 1.05) 2 0 1. ± 0. 0 1. ± 2 0. 45˚ ±5 ˚ OPJ Code JEDEC JEITA Mass (reference value) Rev.0 Oct. 30, 2006 page 3 of 5 IR/SG1 — — 0.25 g HE8807SG/FL As of July, 2002 Unit: mm φ 5.4 ± 0.2 6.0 ± 0.3 14 ± 2 4.5 ± 0.2 (0.4) φ 4.65 ± 0.1 2 – φ 0.45 ± 0.1 1 2 1. 0 ± 0. 2 2.54 ± 0.35 0 1. ± 2 0. 45˚ ±5 ˚ OPJ Code JEDEC JEITA Mass (reference value) Rev.0 Oct. 30, 2006 page 4 of 5 IR/FL — — 0.27 g HE8807SG/FL Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Device Business Unit Opnext Japan, Inc. Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan Tel: (03) 3865-5591 For the detail of Opnext, Inc., see the following homepage: Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ ©2007 Opnext Japan, Inc., All rights reserved. Printed in Japan. Colophon 2.0 Rev.0 Oct. 30, 2006 page 5 of 5