RED Item No.: 105206 1. This specification applies to GaAsP / GaAs LED Chips 2. Structure 2.1 Planar structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Al Au alloy p-Diffusion p-Electrode 1500 Isolator n-Epitaxy GaAsP 300 n-Substrate GaAs n-Electrode 800 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions Forward voltage VF IF = 7 mA Reverse voltage VR IR = 10 µA Luminous intensity IV IF = 7 mA Peak wavelength IF = 7 mA λP Brightness measurement at OSA on gold plate 5. min 5 170 typ max Unit 1,65 1,84 V V µcd nm 250 660 Packing Dice on adhesive film with p-side (wire bond side) on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]