OSA 114110

RED
Item No.: 114110
1.
This specification applies to GaAlAs / GaAs LED Chips
2.
Structure
2.1
Mesa structure
2.2
Electrodes
3.
Outlines (dimensions in microns)
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
n-Electrode
n-Epitaxy GaAlAs
Active Layer
p-Epitaxy GaAlAs
120
265
270
p-Substrate GaAs
265
p-Electrode
Wire bond contacts can also be circular or square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Symbol
Conditions
VF
IR
IF = 20 mA
VR = 5 V
Forward voltage
Reverse current
Luminous intensity *
IV
IF = 20 mA
Peak wavelength
IF = 20 mA
λP
Brightness measurement at OSA on gold plate
5.
min
5,5
typ
max
Unit
1,85
2,10
10
µA
7
655
V
mcd
nm
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
IV typ
min
max
Quantity
© 2004
OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — [email protected]