Si1903DL Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.995 @ VGS = −4.5 V "0.44 1.190 @ VGS = −3.6 V "0.40 1.80 @ VGS = −2.5 V "0.32 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant Available SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QA XX YY S1 Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1903DL-T1 Si1903DL-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V "0.44 "0.41 "0.31 "0.30 IDM "1.0 −0.25 −0.23 0.30 0.27 0.16 0.14 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 360 415 400 460 300 350 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71081 S-50694—Rev. C, 18-Apr-05 www.vishay.com 1 Si1903DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.6 Typ Max Unit −1.5 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 85_C −5 VDS = −5 V, VGS = −4.5 V mA −1.0 A VGS = −4.5 V, ID = −0.41 A 0.850 0.995 VGS = −3.6 V, ID = −0.38 A 1.0 1.190 VGS = −2.5 V, ID = −0.25 A 1.4 1.80 gfs VDS = −10 V, ID = −0.41 A 0.8 VSD IS = −0.23 A, VGS = 0 V −0.8 −1.2 1.2 1.8 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "12 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.25 Turn-On Delay Time td(on) 7.5 15 tr 20 40 8.5 17 12 24 25 40 Rise Time Turn-Off Delay Time VDS = −10 V, VGS = −4.5 V, ID = −0.41 A VDD = −10 V, RL = 20 W ID ^ −0.5 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 0.45 IF = −0.23 A, di/dt = 100 A/ms nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1.0 1.0 VGS = 5 thru 3 V 0.8 2.5 V I D − Drain Current (A) I D − Drain Current (A) 0.8 0.6 0.4 2V 0.2 1V 0.0 0.0 0.5 1.0 1.5 www.vishay.com 25_C 0.6 125_C 0.4 0.2 1.5 V 2.0 2.5 VDS − Drain-to-Source Voltage (V) 2 TC = −55_C 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 71081 S-50694—Rev. C, 18-Apr-05 Si1903DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 100 2.5 2.0 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 3.0 VGS = 2.5 V 1.5 VGS = 3.6 V 1.0 VGS = 4.5 V 80 Ciss 60 40 Coss 20 0.5 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 ID − Drain Current (A) Gate Charge 20 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.41 A 4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 16 1.6 VDS = 10 V ID = 0.41 A 3 2 1 1.4 1.2 1.0 0.8 0.2 0.4 0.6 0.8 1.0 1.2 0.6 −50 1.4 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 1 TJ = 150_C TJ = 25_C 0.1 0.0 12 VDS − Drain-to-Source Voltage (V) 5 0 0.0 8 2.5 2.0 ID = 0.41 A 1.5 1.0 0.5 0.0 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 71081 S-50694—Rev. C, 18-Apr-05 1.2 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si1903DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power Threshold Voltage 0.4 5 4 ID = 250 mA 0.2 3 Power (W) V GS(th) Variance (V) 0.3 0.1 2 0.0 1 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 10−1 TJ − Temperature (_C) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance 1 Time (sec) Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 400_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71081. www.vishay.com 4 Document Number: 71081 S-50694—Rev. C, 18-Apr-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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