SUM85N03-08P Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D D PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 85 0.0105 @ VGS = 4.5 V 72 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS D Buck Converter − High Side − Low Side D Synchronous Rectifier − Secondary Rectifier D TO-263 G G D S Top View S Ordering Information: SUM85N03-08P SUM85N03-08P-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 100_C Pulsed Drain Current ID IDM Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_Cc Operating Junction and Storage Temperature Range V 85 60 200 IAR 50 EAR 125 PD Unit 100b 3.75 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mountc J Junction-to-Ambient ti t A bi t Junction-to-Case Free Air 40 RthJA RthJC 62.5 _C/W C/W 1.5 Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71816 S-32523—Rev. D, 08-Dec-03 www.vishay.com 1 SUM85N03-08P Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 30 V, VGS = 0 V, TJ = 125_C 50 VDS = 30 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 120 VGS = 10 V, ID = 30 A Drain Source On-State Drain-Source On State Resistancea rDS(on) gfs mA m 0.0075 VGS = 10 V, ID = 30 A, TJ = 125_C 0.011 VGS = 10 V, ID = 30 A, TJ = 175_C 0.014 VDS = 15 V, ID = 30 A nA A 0.006 0.0085 VGS = 4.5 V, ID = 20 A Forward Transconductancea V 2 W 0.0105 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1725 425 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 120 Gate-Resistance Rg Total Gate Chargeb Qg Gate-Source Chargeb Qgs Gate-Drain Chargeb Qgd 4.0 Turn-On Delay Timeb td(on) 10 15 160 240 30 45 55 85 Rise Timeb Turn-Off Delay Timeb Fall Timeb tr td(off) 0.5 VDS = 15 V,, VGS = 4.5 V,, ID = 30 A VDD = 15 V, RL = 0.5 W ID ^ 30 A, VGEN = 10 V, Rg = 2.5 W tf 1.9 3.3 13 18 4.5 W nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current IS 70 Pulsed Current ISM 200 Forward Voltagea VSD IF = 30 A, VGS = 0 V 1.2 1.5 V trr IF = 85 A, di/dt = 100 A/ms 80 110 ns Reverse Recovery Time A Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71816 S-32523—Rev. D, 08-Dec-03 SUM85N03-08P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 120 200 VGS = 10 thru 5 V 100 I D − Drain Current (A) I D − Drain Current (A) 150 4V 100 50 3V 0 2 4 6 60 40 TC = 125_C 20 2V 0 80 8 25_C 0 0.0 10 0.5 VDS − Drain-to-Source Voltage (V) 1.0 1.5 −55_C 2.0 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 100 0.020 TC = −55_C r DS(on) − On-Resistance ( W ) g fs − Transconductance (S) 80 25_C 60 125_C 40 20 0 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 0.000 0 20 40 60 80 0 100 20 40 ID − Drain Current (A) 100 Gate Charge 10 V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 2000 80 ID − Drain Current (A) Capacitance 2500 60 Ciss 1500 1000 Coss 500 Crss 0 VDS = 15 V ID = 30 A 8 6 4 2 0 0 6 12 18 24 VDS − Drain-to-Source Voltage (V) Document Number: 71816 S-32523—Rev. D, 08-Dec-03 30 0 5 10 15 20 25 30 35 40 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM85N03-08P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) r DS(on) − On-Resistance (W) (Normalized) 1.75 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 50 VGS = 10 V ID = 30 A I S − Source Current (A) 2.00 1.50 1.25 1.00 TJ = 150_C 10 TJ = 25_C 0.75 0.50 −50 −25 0 25 50 75 100 125 150 1 175 0 TJ − Junction Temperature (_C) 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) THERMAL RATINGS 100 1000 80 100 I D − Drain Current (A) I D − Drain Current (A) Maximum Avalanche Drain Current vs. Ambient Temperature 60 40 20 10 1 ms Limited by rDS(on) 10 ms 100 ms dc TA = 25_C Single Pulse 0.01 0 25 50 75 100 125 150 175 0.1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 1 VDS − Drain-to-Source Voltage (V) TA − Case Temperature (_C) Normalized Effective Transient Thermal Impedance 10 ms 100 ms 1 0.1 0 Safe Operating Area Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71816 S-32523—Rev. D, 08-Dec-03