VISHAY BFW92

BFW92
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range.
Features
D High power gain
D Low noise figure
3
2
94 9308
13623
1
BFW92 Marking: BFW92
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
25
15
2.5
25
300
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3
plated with 35mm Cu
Document Number 85040
Rev. 3, 20-Jan-99
Symbol
RthJA
Value
300
Unit
K/W
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BFW92
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
VCE = 25 V, VBE = 0
VCB = 10 V, IE = 0
VEB = 2.5 V, IC = 0
IC = 1 mA, IB = 0
IC = 10 mA, IB = 1 mA
VCE = 1 V, IC = 2 mA
VCE = 1 V, IC = 25 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
100 nA
IEBO
10
mA
V(BR)CEO 15
V
VCEsat
0.1 0.6
V
hFE
20 100 150
hFE
20
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
q
y
Test Conditions
VCE = 5 V, IC = 2 mA, f = 300 MHz
VCE = 5 V, IC = 14 mA, f = 300 MHz
VCE = 5 V, IC = 25 mA, f = 300 MHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz
Collector-emitter capacitance VCE = 5 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
VCE = 5 V, IC = 2 mA, ZS = 50 W,
f = 500 MHz
Power gain
VCE = 5 V, IC = 10 mA, ZS = 50 W,
f = 200 MHz
VCE = 5 V, IC = 10 mA, ZS = 50 W,
f = 800 MHz
Signal–to–intermodulation
VCE = 6 V, IC = 10 mA, ZL = 37.5 W,
ratio
V1 = 100 mV, f1 = 183 MHz,
V2 = 100 mV, f2 = 200 MHz,
fdIM = 217 MHz
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Symbol
fT
fT
fT
Ccb
Cce
Ceb
F
Min
1
1.3
Typ
1.5
2.4
2.1
0.5
0.3
0.9
3.5
Max
Unit
GHz
GHz
GHz
pF
pF
pF
dB
Gpe
23
dB
Gpe
11
dB
dIM
–45
dB
Document Number 85040
Rev. 3, 20-Jan-99
BFW92
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
C cb – Collector Base Capacitance ( pF )
P tot – Total Power Dissipation ( mW )
400
350
300
250
200
150
100
50
0
0
20
40
60
80
100 120 140 160
Tamb – Ambient Temperature ( °C )
12845
1.0
0.8
0.6
0.4
0.2
f=1MHz
0
0
13609
4
8
12
16
20
VCB – Collector Base Voltage ( V )
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
Figure 1. Total Power Dissipation vs.
Ambient Temperature
f T – Transition Frequency ( MHz )
3000
2500
2000
1500
1000
VCE=5V
f=300MHz
500
0
0
13608
5
10
15
20
25
30
35
40
IC – Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Document Number 85040
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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BFW92
Vishay Telefunken
Dimensions of BFW92 in mm
96 12244
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Document Number 85040
Rev. 3, 20-Jan-99
BFW92
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85040
Rev. 3, 20-Jan-99
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