PMB772 PNP SILICON POWER TRANSISTOR …designed for output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. MAXIMUM RATINGS (Ta = 25 °C) Symbol Value Unit Collector Base Voltage Characteristic VCBO -40 V Collector Emitter Voltage VCEO -30 V Emitter Base Voltage VEBO -5 V Collector Current (DC) IC(DC) -3 A Collector Current (Pulse) IC(Pulse)* -7 Total Power Dissipation Ptot Ta=25°C 1 Tc=25°C 10 Storage Temperature Junction Temperature *Pulse Test PW ≤ 350µs, Duty Cycle ≤ 2% W 1 : Emitter 2 : Collector 3 : Base Unit in mm TO-126 A Tstg -55 ~ 150 °C Tj 150 °C ELECTRICAL CHARACTERISTICS (Ta = 25 °C) Min. Typ. Max. Collector Cutoff Current Characteristic Symbol ICBO VCB =-30V, IE =0 Test Condition - - -1 Unit µA Emitter Cutoff Current IEBO VEB =-3.0V, IC =0 - - -1 µA Collector Saturation Voltage VCE(sat) IC =-2.0A, IB =-0.2A** - -0.3 -0.5 V Base Saturation Voltage VBE(sat) IC =-2.0A, IB =-0.2A** - -1 -2 V - DC Current Gain hFE1 VCE=-2.0V, IC=-20mA** 30 220 - DC Current Gain hFE2 VCE =-2.0V, IC =-1.0A** 60 160 400 - VCE =-50V, IC =-0.1A - 80 - MHz VCB =-10V, IE =0, f=1.0MHz - 55 - pF Gain Bandwidth Product fT Output Capacitance Cob **Pulse Test: PW ≤ 350µs, Duty Cycle ≤ 2% Classification of hFE(2) Weight: 0.85g PNP SILICON POWER TRANSISTOR TO-126 Class R Q P E hFE(2) 60 to 120 100 to 200 160 to 320 200 to 400 PMC reserves the right to make changes without further notice to any products herein. PMC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does PMC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential damages. The examples of applied circuits are provided as reference to the reader therefore we shall not undertake any responsibility for the exercise of rights by third parties. PMC Components Pte Ltd. , Singapore, 2000